VSK.230..PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
FEATURES
•
•
•
•
•
•
•
•
•
•
High voltage
Electrically isolated base plate
3500 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
MAGN-A-PAK
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
PRODUCT SUMMARY
I
T(AV)
230 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√t
V
DRM
/V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
85 °C
VALUES
230
510
7500
7850
280
260
280
Up to 2000
- 40 to 130
kA
2
s
kA
2
√s
V
°C
A
UNITS
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
12
VSK.230-
16
18
20
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
800
1200
1600
1800
2000
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1300
1700
1900
2100
50
I
RRM
/I
DRM
AT 130 °C
MAXIMUM
mA
Document Number: 93053
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.230..PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope
resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
VALUES
230
85
510
7500
7850
6300
6600
280
256
198
181
2800
1.03
1.07
0.77
mΩ
0.73
1.59
500
1000
mA
V
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
),
T
J
= T
J
maximum
(I >
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
),
T
J
= T
J
maximum
(I >
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
I
TM
=
π
x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 12 V, resistive load = 1
Ω,
gate pulse: 10 V, 100 μs, T
J
= 25 °C
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
d
t
r
t
q
TEST CONDITIONS
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
maximum;
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
Ω
VALUES
1.0
2.0
50 to 150
μs
UNITS
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
VALUES
50
3000
1000
UNITS
mA
V
V/μs
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93053
Revision: 02-Jul-10
VSK.230..PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 230 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GT
V
GT
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
t
p
≤
5 ms, T
J
= T
J
maximum
t
p
≤
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate voltage to trigger
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate current to trigger
I
GT
V
GD
I
GD
dI/dt
T
J
= 25 °C
T
J
= T
J
maximum
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, I
TM
= 400 A,
rated V
DRM
applied
Anode supply = 12 V,
resistive load; Ra = 1
Ω
Anode supply = 12 V,
resistive load; Ra = 1
Ω
VALUES
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
10.0
500
V
mA
A/μs
mA
V
UNITS
W
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
Case style
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 h to allow for the spread of
the compound.
TEST CONDITIONS
VALUES
- 40 to 130
- 40 to 150
0.125
K/W
0.02
UNITS
°C
4 to 6
Nm
500
17.8
MAGN-A-PAK
g
oz.
ΔR
CONDUCTION PER JUNCTION
DEVICES
VSK.230-
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.009
120°
0.010
90°
0.010
60°
0.020
30°
0.032
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.007
120°
0.011
90°
0.015
60°
0.020
30°
0.033
UNITS
K/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93053
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.230..PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93053
Revision: 02-Jul-10
VSK.230..PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 230 A
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
Document Number: 93053
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
