VSML3710
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
948553
• Angle of half intensity:
ϕ
= ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
VSML3710 is an infrared, 940 nm emitting diode in GaAlAs,
MQW (multi quantum well) technology with high radiant
power, molded in a PLCC-2 package for surface mounting
(SMD).
APPLICATIONS
• IR emitter in photointerrupters, sensors, and reflective
sensors
• IR emitter in low space applications
• Household appliance
• Tactile keyboards
PRODUCT SUMMARY
COMPONENT
VSML3710
I
e
(mW/sr)
9.5
ϕ
(deg)
± 60
λ
p
(nm)
940
t
r
(ns)
15
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSML3710-GS08
VSML3710-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.6, 22-Oct-14
Document Number: 81300
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSML3710
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
Acc. figure 11, J-STD-020
J-STD-051, soldered on PCB
T
sd
R
thJA
VALUE
5
100
200
1
160
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21343
T
amb
- Ambient Temperature (°C)
21344
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
4
60
9.5
70
40
-0.6
± 60
940
30
0.2
15
15
20
MIN.
TYP.
1.35
2.6
-1.8
100
MAX.
1.6
3
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.6, 22-Oct-14
Document Number: 81300
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSML3710
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
t
p
/T = 0.005
T
amb
< 60 °C
0.01
1000
0.02
0.05
100
0.2
0.5
DC
10
0.1
Vishay Semiconductors
10 000
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 μs
100
I
F
- Forward Current (mA)
10
1
1
0.01
95 9985
0.1
0.1
1
10
100
1
10
100
1000
t
p
- Pulse Length (ms)
I
F
- Forward Current (mA)
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10
4
1000
Phi
e
- Radiant Power (mW)
t
p
= 100 μs
100
I
F
- Forward Current (mA)
10
3
10
2
t
P
= 100 µs
t
P
/T = 0.001
10
1
10
1
10
0
0
13600
0.1
1
2
3
4
1
10
100
1000
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
Fig. 7 - Radiant Power vs. Forward Current
Fig. 4 - Forward Current vs. Forward Voltage
1.2
I
F
= 1 mA
V
F
- Forward Voltage (V)
1.6
1.1
1.0
0.9
0.8
0.7
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C)
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
0.4
0
-10 0 10
94 7993
50
100
140
16848
T
amb
- Ambient Temperature (°C)
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Rev. 1.6, 22-Oct-14
Document Number: 81300
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSML3710
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
100
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
I
e, rel
- Relative Radiant Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
21445
λ
- Wavelength (nm)
94 8013
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
3.5
±0.2
1.75
±0.1
0.8
Pin identification
0.9
2.8
±0.15
Technical drawings
according to DIN
specifications
C
A
2.2
Dimensions in mm
Ø2.4
3
+0.15
Drawing-No.: 6.541-5067.01-4
Issue: 6; 23.09.13
Mounting Pad Layout
1.2
Area covered
with
solderresist
2.6 (2.8)
1.6 (1.9)
4
Dimensions: Reflow and vapor phase (wave
soldering)
Rev. 1.6, 22-Oct-14
Document Number: 81300
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4
ϕ
- Angular Displacement
VSML3710
www.vishay.com
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Vishay Semiconductors
3.5
3.1
2.2
2.0
5.75
5.25
3.6
3.4
1.85
1.65
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
1.6
1.4
4.1
3.9
2.05
1.95
4.0
3.6
8.3
7.7
max. 100 s
4.1
3.9
0.25
94 8668
19841
Time (s)
Fig. 13 - Tape Dimensions in mm for PLCC-2
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
> 160 mm
40 empty
compartments
min. 75 empty
compartments
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Tape leader
Carrier leader
Carrier trailer
Fig. 14 - Beginning and End of Reel
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
10.0
9.0
Adhesive tape
4.5
3.5
Blister tape
120°
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
63.5
60.5
Component cavity
94 8670
Fig. 12 - Blister Tape
180
178
14.4 max.
94 8665
Fig. 15 - Dimensions of Reel-GS08
Rev. 1.6, 22-Oct-14
Document Number: 81300
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
