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VT-706-GAR-287B-16M3840000_SNPBDIP

CMOS Output Clock Oscillator, 16.384MHz Nom, SMD, 4 PIN

器件类别:无源元件    振荡器   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Microsemi
包装说明
SMD, 4 PIN
Reach Compliance Code
compliant
老化
1 PPM/FIRST YEAR
最大控制电压
2.5 V
最小控制电压
0.5 V
最长下降时间
4 ns
频率调整-机械
NO
频率偏移/牵引率
8 ppm
频率稳定性
0.28%
JESD-609代码
e0
安装特点
SURFACE MOUNT
端子数量
4
标称工作频率
16.384 MHz
最高工作温度
55 °C
最低工作温度
振荡器类型
CMOS
输出负载
15 pF
封装主体材料
CERAMIC
封装等效代码
DILCC4,.2,200
物理尺寸
7.0mm x 5.0mm x 1.9mm
最长上升时间
4 ns
最大压摆率
6 mA
最大供电电压
2.94 V
最小供电电压
2.66 V
标称供电电压
2.8 V
表面贴装
YES
最大对称度
55/45 %
端子面层
Tin/Lead (Sn/Pb)
文档预览
VT-706
Temperature Compensated Crystal Oscillator
VT-706
Description
Vectron’s VT-706 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, Clipped sine wave or CMOS output,
analog temperature compensated oscillator, operating off a 5.0 or 3.3 volt supply in a hermetically sealed 7.0 x 5.0 mm ceramic
package.
Features
5.000 - 52.000MHz Output Frequency
±0.2ppm Temperature Stability
Optional Frequency Tuning
Fundamental Crystal Design
Stratum 3 version available as a custom part number
Gold over nickel contact pads
Hermetically Sealed Ceramic SMD package
Applications
Femto Cells
Base Stations
IP Networking
Global Positioning Systems
Point to Point Radio
Manpack Radio
Test and Measurement
• Product is compliant to RoHS directive
and fully compatible with lead free assembly
Block Diagram
V
DD
Crystal
Output
Analog
Temperature
Comp.
V
CONTROL
(Optional)
Gnd
Page1
Specifications
Table 1. Electrical Performance, Clipped Sine Wave Option
Parameter
Output Frequency
1
,
Ordering Option
Supply Voltage
3
,
Ordering Option
Supply Current
Operating Temperature,
Ordering Option
Stability Over T
OP4
,
Ordering Option
Frequency Tolerance
5
Power Supply Stability, ±5%
Load Stability, ±10%
Aging / 1st year
Tuning Range
6
Tuning Slope
Control Voltage to reach Pull Range
Control Voltage Impedance
Output Level High
Output Load
Start Up Time
Phase Noise, 10.00MHz
7
10Hz
100Hz
1kHz
10kHz
100kHz
V
O
p-p
C
L
t
SU
Phase Noise
7
N
Symbol
f
O
V
DD
I
DD
T
OP
F
STAB
F
TOL
F
PWR
F
LOAD
F
AGE
Min.
5
Typ
+2.8, +3.0, +3.3, +5.0
Max
52
3.5
Units
MHz
V
mA
°C
ppm
ppm
ppm
ppm
ppm
ppm
0/55, -10/70, -20/70, -30/80, -30/85, -40/85
±0.05, ±0.10, ±0.20, ±0.28, ±0.50
±2.0
±0.1
±0.05
±1.0
±5.0, ±8.0, ±10.0, ±12.0
Positive
0.5
100
1.5
2.5
Frequency Stability
Frequency Tuning (EFC),
Ordering Option
PR
V
C
V
Kohm
V
RF Output (Clipped Sine Wave),
Ordering Option
0.8
10k || 10pF
2
ms
dBc/Hz
-99
-126
-145
-152
-155
1. Refer to Table 8 for Standard Frequencies. Other Frequencies are available on request. Check with factory.
2. Output DC-cut capacitor is optional.
3. The VT-706 power supply pin (Pin4) should be filtered using a by-pass capacitor of 0.1uF for optimal performance.
4. Referenced to the midpoint between minimum and maximum frequency value over Operating Temperature Range.
5. Frequency measured at 25 °C, 1 hour after 2 IR reflows.
6. Referenced to Mid Control Voltage
7. Measured at ambient temperature using Agilent E5052B Signal Source Analyzer.
Page2
Table 2. Electrical Performance, CMOS Option
Parameter
Output Frequency
1
,
Ordering Option
Supply Voltage
3
,
Ordering Option
Supply Current
Operating Temperature,
Ordering Option
Stability Over T
OP4
,
Ordering Option
Frequency Tolerance
5
Power Supply Stability, ±5%
Load Stability, ±10%
Aging / 1st year
Tuning Range
6
Tuning Slope
Control Voltage to reach Pull Range
Control Voltage Impedance
Output Level High
Output Level Low
Output Load
Duty Cycle
Start Up Time
Rise & Fall Times
Phase Noise
7
Phase Noise, 10.00MHz
7
10Hz
100Hz
1kHz
10kHz
100kHz
N
Symbol
f
O
V
DD
I
DD
T
OP
F
STAB
F
TOL
F
PWR
F
LOAD
F
AGE
Min.
5
Typ
+2.8, +3.0, +3.3, +5.0
Max
52
6.0
Units
MHz
V
mA
°C
ppm
ppm
ppm
ppm
ppm
ppm
0/55, -10/70, -20/70, -30/80, -30/85, -40/85
±0.05, ±0.10, ±0.20, ±0.28, ±0.50
±2.0
±0.1
±0.05
±1.0
±5.0, ±8.0, ±10.0, ±12.0
Positive
0.5
100
1.5
2.5
Frequency Stability
Frequency Tuning (EFC),
Ordering Option
PR
V
C
V
Kohm
V
RF Output (CMOS),
Ordering Option
V
OH
V
OL
C
L
45
t
SU
0.9*V
DD
0.1*V
DD
15
55
2
4
pF
%
ms
ns
dBc/Hz
-102
-128
-147
-154
-156
1. Refer to Table 8 for Standard Frequencies. Other Frequencies are available on request. Check with factory.
2. Output DC-cut capacitor is optional.
3. The VT-706 power supply pin (Pin4) should be filtered using a by-pass capacitor of 0.1uF for optimal performance.
4. Referenced to the midpoint between minimum and maximum frequency value over Operating Temperature Range.
5. Frequency measured at 25 °C, 1 hour after 2 IR reflows.
6. Referenced to Mid Control Voltage.
7. Measured at ambient temperature using Agilent E5052B Signal Source Analyzer
Page3
Phase Noise Performance for 10MHz CMOS
Package Outline Drawing & Pad Layout
Phase Noise Performance for 10MHz CMOS
XXMXXX
YYWW T
Dimensions in mm
Table 3. Pinout
Pin #
1
Marking Information
XXMXX - Frequency (Example: 10M000)
YY - Year of Manufacture
WW - Week of the Year
T - Manufacturing Location
- Pin 1 Indicator
2
3
4
Symbol
Vc or NC
GND
OUT
V
DD
Function
TCXO Control Voltage or No Connect
Ground
RF Output
Supply Voltage
Note:
0.1uF capacitor is a by-pass power supply filter capacitor
placed between Pin4 (Vdd) and Ground for optimal
performance.
Page4
Maximum Ratings
S
Absolute Maximum Ratings and Handling Precautions
Stresses in excess of the absolute maximum ratings can permanently damage the device. Functional operation is not implied or any other
excess of conditions represented in the operational sections of this data sheet. Exposure to absolute maximum ratings for extended
periods may adversely affect device reliability.
Although ESD protection circuitry has been designed into the VT-706, proper precautions should be taken when handling and mounting,
VI employs a Human Body Model and Charged Device Model for ESD susceptibility testing and design evaluation.
ESD thresholds are dependent on the circuit parameters used to define the model. Although no industry standard has been adopted for
the CDM a standard resistance of 1.5kOhms and capacitance of 100pF is widely used and therefor can be used for comparison purposes.
Table 4. Maximum Ratings
Parameter
Storage Temperature
Supply Voltage
Control Voltage
Enable/Disable Voltage
ESD, Human Body Model
ESD, Charged Device Model
Symbol
T
STORE
V
DD
V
C
E/D
Rating
-55/125
-0.6/6
-0.6/V
DD
+0.6
-0.6/V
DD
+0.6
1500
1000
Unit
ºC
V
V
V
V
V
Reliability
Table 5. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Fine and Gross Leak
Resistance to Solvents
Moisture Sensitivity Level
Contact Pads
Condition
MIL-STD-883 Method 2002
MIL-STD-883 Method 2007
MIL-STD-883 Method 1010
MIL-STD-883 Method 2003
MIL-STD-883 Method 1014
MIL-STD-883 Method 2015
MSL1
Gold over Nickel
IR Reflow
S
Suggested IR Profile
Devices are built using lead free epoxy and can be subjected to standard lead free IR reflow conditions shown in Table 6. Contact pads are
gold over nickel and lower maximum temperatures can also be used, such as 220°C.
Table 6. Reflow Profile
Parameter
PreHeat Time
Ts-min
Ts-max
Ramp Up
Time above 217C
Time to Peak Temperature
Time at 260C
Time at 240C
Ramp down
Symbol
t
s
Value
200 sec Max
150°C
200°C
3ºC/sec Max
150 sec Max
480 sec Max
30 sec Max
60 sec Max
6ºC/sec Max
R
UP
t
L
t
25C to peak
t
P
t
P2
R
DN
Page5
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