Data Sheet
1.2V Drive Pch + Pch MOSFET
VT6J1
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
VMT6
0.14
1.2
(6)
(5) (4)
0.5
0.14
Features
1) Low on-resistance.
2) Small package(VMT6).
3) Low voltage drive(1.2V drive).
0.92
1.2
(1)
(2) (3)
0.16
0.13
0.4 0.4
0.8
±
0.1
Abbreviated symbol : J01
Application
Switching
Packaging specifications
Type
VT6J1
Package
Code
Basic ordering unit (pieces)
Taping
T2CR
8000
Inner circuit
(6)
(5)
(4)
∗1
∗2
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗1
(1)
(2)
(3)
1
ESD PROTECTION DIODE
2
BODY DIODE
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
Symbol
V
DSS
V
GSS
Limits
20
10
100
Unit
V
V
mA
mA
Continuous
Pulsed
I
D
I
DP
P
D
Tch
Tstg
*1
*2
400
0.15
W/TOTAL
0.12
W/ELEMENT
150
C
55
to
150
C
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1/5
2011.08 - Rev.A
VT6J1
Electrical characteristics
(Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
GS (th)
Min.
-
20
-
0.3
-
Static drain-source on-state
resistance
-
*
R
DS (on)
-
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
Data Sheet
Typ.
-
-
-
-
2.5
3.4
4.8
6.0
10.0
-
15.0
4.0
1.5
46
62
325
137
Max.
10
-
1
1.0
3.8
5.1
8.2
13.2
40.0
-
-
-
-
-
-
-
-
Unit
A
V
A
V
Conditions
V
GS
=10V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=10V, I
D
=100A
I
D
=100mA, V
GS
=4.5V
I
D
=50mA, V
GS
=2.5V
Drain-source breakdown voltage V
(BR)DSS
I
D
=20mA, V
GS
=1.8V
I
D
=10mA, V
GS
=1.5V
I
D
=1mA, V
GS
=1.2V
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
120
-
-
-
-
-
-
-
mS V
DS
=10V, I
D
=100mA
pF
pF
pF
ns
ns
ns
ns
V
DS
=10V
V
GS
=0V
f=1MHz
V
DD
10V,
I
D
=50mA
V
GS
=4.5V
R
L
=200
R
G
=10
Body
diode characteristics
(Source-Drain)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=100mA, V
GS
=0V
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2/5
2011.08 - Rev.A
VT6J1
Electrical
characteristic curves
Data Sheet
0.1
T
a
=25°C
Pulsed
0.1
1
V
DS
=
-10V
Pulsed
DRAIN CURRENT :
-I
D
[A]
0.08
0.08
DRAIN CURRENT :
-I
D
[A]
V
GS
=
-4.5V
V
GS
=
-4.0V
V
GS
=
-2.5V
V
GS
=
-2.0V
V
GS
=
-1.8V
DRAIN CURRENT :
-I
D
[A]
V
GS
=
-1.5V
0.1
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
0.06
0.04
V
GS
=
-1.5V
0.02
V
GS
=
-4.5V
V
GS
=
-4.0V
V
GS
=
-2.5V
V
GS
=
-2.0V
V
GS
=
-1.8V
V
GS
=
-1.2V
0.06
0.01
0.04
0.02
0.001
V
GS
=
-1.2V
T =25°C
a
Pulsed
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE :
-V
DS
[V]
Fig.1 Typical output characteristics(Ⅰ)
0
DRAIN-SOURCE VOLTAGE :
-V
DS
[V]
Fig.2 Typical output characteristics(Ⅱ)
0.0001
0
0.5
1
1.5
2
GATE-SOURCE VOLTAGE :
-V
GS
[V]
Fig.3 Typical Transfer Characteristics
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
T
a
=25°C
Pulsed
10000
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-4.5V
Pulsed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-2.5V
Pulsed
10000
10000
1000
V
GS
=
-1.2V
V
GS
=
-1.5V
V
GS
=
-1.8V
V
GS
=
-2.5V
V
GS
=
-4.5V
1000
1000
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
100
0.0001
0.001
0.01
0.1
1
100
0.0001
0.001
0.01
0.1
1
100
0.0001
0.001
0.01
0.1
1
DRAIN-CURRENT :
-I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT :
-I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT :
-I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-1.8V
Pulsed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-1.5V
Pulsed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=
-1.2V
Pulsed
10000
10000
10000
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
1000
1000
1000
100
0.0001
0.001
0.01
0.1
1
100
0.0001
0.001
0.01
0.1
1
100
0.0001
0.001
0.01
0.1
1
DRAIN-CURRENT :
-I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT :
-I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
DRAIN-CURRENT :
-I
D
[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
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3/5
2011.08 - Rev.A
VT6J1
Data Sheet
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1
REVERSE DRAIN CURRENT :
-I
S
[A]
V
DS
=
-10V
Pulsed
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mΩ]
V
GS
=0V
Pulsed
10000
T
a
=25°C
Pulsed
I
D
=
-0.001A
6000
I
D
=
-0.1A
4000
8000
0.1
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
0.1
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-25°C
2000
0.01
0.01
0.01
0
0.5
1
1.5
0
0
2
4
6
8
10
0.1
DRAIN-CURRENT :
-I
D
[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
SOURCE-DRAIN VOLTAGE :
-V
SD
[V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE :
-V
GS
[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
t
d(off)
SWITCHING TIME : t [ns]
Ta=25°C
V
DD
=
-10V
V
GS
=-4.5V
R
G
=10Ω
Pulsed
100
C
iss
CAPACITANCE : C [pF]
10
100
t
f
1
C
oss
C
rss
Ta=25°C
f=1MHz
V
GS
=0V
t
r
10
0.01
t
d(on)
0
0.1
DRAIN-CURRENT :
-I
D
[A]
Fig.13 Switching Characteristics
1
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE :
-V
DS
[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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4/5
2011.08 - Rev.A
VT6J1
Measurement circuits
Data Sheet
Pulse width
I
D
V
GS
R
L
D.U.T.
R
G
V
DD
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
V
DS
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
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5/5
2011.08 - Rev.A
