GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1291W-1H, W-2H
PACKAGE DIMENSIONS
inch (mm)
DESCRIPTION
CASE 26W T-1¾ (5 mm) WIDE ANGLE
CHIP SIZE: .015" x .015"
This wide beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective
design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarm applications
(UL file #S3506).
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS @ 25°C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 µA
880 nm
23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 108-110)
Output
Irradiance
Part Number
E
e
mW/cm
2
Min.
VTE1291W-1H
VTE1291W-2H
1.2
2.5
Typ.
1.6
3.3
Condition
distance
mm
36
36
Diameter
mm
6.4
6.4
Radiant
Intensity
I
e
mW/sr
Min.
16
32
Total Power
P
O
mW
Typ.
20
25
Test
Current
I
FT
mA
(Pulsed)
100
100
Forward Drop
V
F
@ I
FT
Volts
Typ.
Typ.
1.5
1.5
Max.
2.0
2.0
±25°
±25°
Half Power Beam
Angle
θ
1/2
Refer to General Product Notes, page 2.
Excelitas Technologies,
22001 Dumberry, Vaudreuil, Canada J7V 8P7
Phone: 877-734-6786 Fax: 450-424-3413
www.excelitas.com
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