VUO110-14NO7
Standard Rectifier Module
3~
Rectifier
V
RRM
= 1400 V
I
DAV
=
125 A
I
FSM
= 1200 A
3~ Rectifier Bridge
Part number
VUO110-14NO7
B-
C~ D~ E~
A+
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For three phase bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
PWS-E
●
Industry standard outline
●
RoHS compliant
●
Easy to mount with two screws
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
© 2013 IXYS all rights reserved
VUO110-14NO7
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d=
⅓
T
VJ
= 150 °C
0.79
4.5
0.7
0.3
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
37
175
1.20
1.30
1.02
1.10
V
mΩ
K/W
K/W
W
kA
kA
kA
kA
min.
typ.
max. non-repetitive reverse blocking voltage
max.
1500
1400
100
2
1.13
1.46
1.04
1.47
125
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 1400 V
V
R
= 1400 V
I
F
=
I
F
=
50 A
50 A
forward voltage drop
I
F
= 150 A
I
F
= 150 A
I
DAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
bridge output current
T
C
= 110°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
7.20 kA²s
6.98 kA²s
5.20 kA²s
5.04 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
© 2013 IXYS all rights reserved
VUO110-14NO7
Package
Symbol
I
RMS
T
stg
T
VJ
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
PWS-E
Definition
RMS current
storage temperature
virtual junction temperature
Ratings
Conditions
per terminal
min.
-40
-40
typ.
max.
200
125
150
Unit
A
°C
°C
g
Nm
Nm
mm
mm
V
V
284
4.25
4.25
12.0
26.0
3000
2500
5.75
5.75
Made in Germany
Circuit
Diagram
Product
Number
XXXX-XXXX YYCW Lot#
Date Code
Ordering
Standard
Part Number
VUO110-14NO7
Marking on Product
VUO110-14NO7
Delivery Mode
Box
Quantity
5
Code No.
462381
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.79
3.3
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
© 2013 IXYS all rights reserved
VUO110-14NO7
Outlines PWS-E
M6x12
7
94
80
72
26
26
15
54
27
6.5
A +
3
2
B -
4
5
6
7
1
12
M6
25
66
B-
C~ D~ E~
A+
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
6.5
C ~
D ~
E ~
3
30
20130410b
© 2013 IXYS all rights reserved
VUO110-14NO7
Rectifier
200
1000
50Hz, 80% V
RRM
10
4
50 Hz
0.8 x V
RRM
160
800
120
I
FSM
[A]
600
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 45°C
2
T
VJ
= 45°C
I
F
80
[A s]
T
VJ
= 150°C
T
VJ
= 150°C
[A]
40
0
0.5
1.0
1.5
400
0.001
10
3
0.01
0.1
1
1
2
2
3
4 5 6 7 89
V
F
[V]
Fig. 1 Forward current vs.
voltage drop per diode
t [s]
Fig. 2 Surge overload current
vs. time per diode
160
t [ms]
Fig. 3 I t vs. time per diode
50
DC =
1
0.5
0.4
0.33
0.17
0.08
40
P
tot
30
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
120
I
FAVM
80
[W]
20
[A]
40
DC =
1
0.5
0.4
0.33
0.17
0.08
10
0
0
10
20
30
40
50 0
25
50
75
100 125 150 175
0
0
25
50
75
100 125 150
I
FAV
[A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.8
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.6
Z
thJC
0.4
[K/W]
0.2
R
i
0.100
0.010
0.162
0.258
t
i
0.020
0.010
0.225
0.800
0.580
0.0
1
10
100
1000
10000
0.170
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
© 2013 IXYS all rights reserved
