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W08G

Bridge Rectifier Diode, 1.5A, 800V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件:W08G

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
Reach Compliance Code
compliant
配置
BRIDGE, 4 ELEMENTS
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1 V
最大非重复峰值正向电流
50 A
元件数量
4
最高工作温度
125 °C
最大输出电流
1.5 A
最大重复峰值反向电压
800 V
表面贴装
NO
文档预览
W005G - W10G
PRV : 50 - 1000 Volts
Io : 1.5 Ampere
FEATURES :
*
*
*
*
*
*
*
*
Glass passivated chip
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
GLASS PASSIVATED SINGLE-PHASE
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Ta = 25
°C
Ta = 125
°C
Maximum Forward Voltage per Diode at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL W005G W01G W02G W04G W06G W08G W10G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
2
UNIT
V
V
V
A
A
AS
V
µA
mA
pf
°C/W
°C
°C
2
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50
10
1.0
5
0.5
14
36
600
420
600
800
560
800
1000
700
1000
Typical Junction Capacitance per Diode (Note 1)
- 50 to + 150
- 50 to + 150
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
Page 1 of 2
Rev. 02 : April 1, 2005
RATING AND CHARACTERISTIC CURVES ( W005G - W10G )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.5
50
PC Board
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
1.2
0.375(9.5mm)
PEAK FORWARD SURGE
CURRENT, AMPERES
40
T
J
= 55
°C
0.9
Copper Pads
0.22" x 0.22" (5.5 x5.5mm)
30
0.6
20
SINGLE HALF SINE WAVE
(JEDEC METHOD)
0.3
60 Hz, Resistive or Inductive load.
0
0
25
50
75
100
125
150
175
10
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FORWARD CURRENT, AMPERES
20
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
10
Ta = 100
°C
1.0
1
0.1
T
J
= 25
°C
Pulse Width = 300
µs
1 % Duty Cycle
0.1
Ta = 25
°C
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : April 1, 2005
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参数对比
与W08G相近的元器件有:W01G、W10G、W005G、W04G、W06G、W02G。描述及对比如下:
型号 W08G W01G W10G W005G W04G W06G W02G
描述 Bridge Rectifier Diode, 1.5A, 800V V(RRM), Bridge Rectifier Diode, 1.5A, 100V V(RRM), Bridge Rectifier Diode, 1.5A, 1000V V(RRM), Bridge Rectifier Diode, 1.5A, 50V V(RRM), Bridge Rectifier Diode, 1.5A, 400V V(RRM), Bridge Rectifier Diode, 1.5A, 600V V(RRM), Bridge Rectifier Diode, 1.5A, 200V V(RRM),
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
最大非重复峰值正向电流 50 A 50 A 50 A 50 A 50 A 50 A 50 A
元件数量 4 4 4 4 4 4 4
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最大输出电流 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
最大重复峰值反向电压 800 V 100 V 1000 V 50 V 400 V 600 V 200 V
表面贴装 NO NO NO NO NO NO NO
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