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W24512

64K X 8 HIGH SPEED CMOS STATIC RAM

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

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W24512A
64K
×
8 HIGH SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W24512A is a high speed, low power CMOS static RAM organized as 65536
×
8 bits that
operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
High speed access time: 25 nS (max.)
Low power consumption:
Active: 800 mW (max.)
Single +5V power supply
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
Available packages: 32-pin 300 mil SOJ, 450
mil SOP, and standard type one TSOP
(8 mm
×
20 mm)
PIN CONFIGURATIONS
BLOCK DIAGRAM
V
DD
NC
NC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 1
I/O 2
I/O 3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
DD
A15
CS2
WE
A13
A8
A9
A11
OE
A1 0
CS1
I/O 8
I/O 7
I/O 6
I/O 5
I/O 4
V
SS
A0
.
.
A15
DECODER
CORE
ARRAY
CS2
CS1
OE
WE
CONTROL
DATA I/O
I/O1
.
.
I/O8
PIN DESCRIPTION
SYMBOL
A0−A15
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
V
SS
I/O3
I/O2
I/O1
A0
A1
A2
A3
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
A11
A9
A8
A13
WE
CS2
A15
V
DD
NC
NC
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
I/O1−I/O8
CS1, CS2
WE
OE
V
DD
V
SS
NC
32-pin
TSOP
-1-
Publication Release Date: April 1997
Revision A3
W24512A
TRUTH TABLE
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
V
DD
CURRENT
I
SB
, I
SB1
I
SB
, I
SB1
I
DD
I
DD
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to +7.0
-0.5 to V
DD
+0.5
1.0
-65 to +150
0 to +70
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 5V
±10%,
V
SS
= 0V, T
A
= 0 to 70° C)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage
Current
SYM.
V
IL
V
IH
I
LI
I
LO
TEST CONDITIONS
-
-
V
IN
= V
SS
to V
DD
V
I/O
= V
SS
to V
DD
CS1 = V
IH (min.)
or
CS2 = V
IL (max.)
or
OE = V
IH (min.)
or
WE = V
IL (max.)
I
OL
= +8.0 mA
I
OH
= -4.0 mA
CS1 = V
IL (max.)
,
CS2 = V
IH (min.)
I/O = 0mA, Cycle = min
Duty = 100%
CS1 = V
IH (min.)
or
CS2 = V
IL (max.)
Cycle = min, Duty = 100%
CS1
V
DD
-0.2V or
CS2
0.2V
MIN.
-0.5
+2.2
-10
-10
TYP.
-
-
-
-
MAX.
+0.8
V
DD
+0.5
+10
+10
UNIT
V
V
µA
µA
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
V
OL
V
OH
I
DD
-
2.4
-
-
-
-
0.4
-
160
V
V
mA
Standby Power
Supply Current
I
SB
-
-
30
mA
I
SB1
-
-
10
mA
Note: Typical characteristics are at V
DD
= 5V, T
A
= 25° C.
-2-
W24512A
CAPACITANCE
(V
DD
= 5V, T
A
= 25° C, f = 1 MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYM.
C
IN
C
I/O
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
MAX.
8
10
UNIT
pF
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 3V
5 nS
1.5V
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
CONDITIONS
AC Test Loads and Waveform
R1 480 ohm
R1 480 ohm
5V
OUTPUT
OUTPUT
30 pF
Including
Jig and
Scope
5V
5 pF
R2
255 ohm
Including
Jig and
Scope
R2
255 ohm
(For T
CLZ1,
T
CLZ2,
T
OLZ,
T
CHZ1,
T
CHZ2,
T
OHZ,
T
WHZ,
T
OW
)
3.0V
90%
10%
5 nS
10%
90%
0V
5 nS
-3-
Publication Release Date: April 1997
Revision A3
W24512A
AC Characteristics,continued
(V
DD
= 5V
±10%,
V
SS
= 0V, T
A
= 0 to 70° C)
Read Cycle
PARAMETER
Read Cycle Time
Address Access Time
Chip Select Access Time
CS1
CS2
Output Enable to Output Valid
Chip Selection to Output in Low Z
CS1
CS2
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
CS1
CS2
Output Disable to Output in High Z
Output Hold from Address Change
*
These parameters are sampled but not 100% tested.
SYM.
T
RC
T
AA
T
ACS1
T
ACS2
T
AOE
T
CLZ1
*
T
CLZ2
*
T
OLZ
*
T
CHZ1
*
T
CHZ2
*
T
OHZ*
T
OH
W24512A-25
MIN.
25
-
-
-
-
3
3
0
-
-
-
3
MAX.
-
25
25
25
12
-
-
-
12
12
12
-
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
UNIT
Write Cycle
PARAMETER
Write Cycle Time
Chip Selection to End of Write
CS1
CS2
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
CS1
,
WE
CS2
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
* T
hese parameters are sampled but not 100% tested.
-4-
SYM.
T
WC
T
CW1
T
CW2
T
AW
T
AS
T
WP
T
WR1
T
WR2
T
DW
T
DH
T
WHZ
*
T
OHZ
*
T
OW
W24512A-25
MIN.
25
18
18
18
0
15
0
0
12
0
-
-
0
MAX.
-
-
-
-
-
-
-
-
-
-
12
12
-
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
UNIT
W24512A
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled)
T
RC
Address
T
AA
T
OH
T
OH
D
OUT
Read Cycle 2
(Chip Select Controlled)
CS1
T
ACS1
CS2
T
ACS2
T
CHZ2
T
CHZ1
T
CLZ1
D
OU
T
CLZ2
Read Cycle 3
(Output Enable Controlled)
T
RC
Address
T
AA
OE
T
AOE
T
OLZ
CS1
T
ACS1
T
CLZ1
CS2
T
ACS2
T
CLZ2
D
OUT
T
CHZ2
T
OHZ
T
CHZ1
T
OH
-5-
Publication Release Date: April 1997
Revision A3
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参数对比
与W24512相近的元器件有:W24512AT-25、W24512AS-25、W24512AJ-25、W24512A。描述及对比如下:
型号 W24512 W24512AT-25 W24512AS-25 W24512AJ-25 W24512A
描述 64K X 8 HIGH SPEED CMOS STATIC RAM 64K X 8 HIGH SPEED CMOS STATIC RAM 64K X 8 HIGH SPEED CMOS STATIC RAM 64K X 8 HIGH SPEED CMOS STATIC RAM 64K X 8 HIGH SPEED CMOS STATIC RAM
是否Rohs认证 - 不符合 不符合 不符合 -
厂商名称 - Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) -
零件包装代码 - TSOP1 SOIC SOJ -
包装说明 - 8 X 20 MM, TSOP1-32 0.450 INCH, SOP-32 0.300 INCH, SOJ-32 -
针数 - 32 32 32 -
Reach Compliance Code - _compli _compli _compli -
ECCN代码 - EAR99 EAR99 EAR99 -
最长访问时间 - 25 ns 25 ns 25 ns -
I/O 类型 - COMMON COMMON COMMON -
JESD-30 代码 - R-PDSO-G32 R-PDSO-G32 R-PDSO-J32 -
JESD-609代码 - e0 e0 e0 -
长度 - 18.4 mm 20.45 mm 20.955 mm -
内存密度 - 524288 bi 524288 bi 524288 bi -
内存集成电路类型 - STANDARD SRAM STANDARD SRAM STANDARD SRAM -
内存宽度 - 8 8 8 -
功能数量 - 1 1 1 -
端子数量 - 32 32 32 -
字数 - 65536 words 65536 words 65536 words -
字数代码 - 64000 64000 64000 -
工作模式 - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
最高工作温度 - 70 °C 70 °C 70 °C -
组织 - 64KX8 64KX8 64KX8 -
输出特性 - 3-STATE 3-STATE 3-STATE -
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 - TSOP1 SOP SOJ -
封装等效代码 - TSSOP32,.8,20 SOP32,.56 SOJ32,.34 -
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE -
并行/串行 - PARALLEL PARALLEL PARALLEL -
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
电源 - 5 V 5 V 5 V -
认证状态 - Not Qualified Not Qualified Not Qualified -
座面最大高度 - 1.2 mm 3 mm 3.556 mm -
最大待机电流 - 0.01 A 0.01 A 0.01 A -
最小待机电流 - 4.5 V 4.5 V 4.5 V -
最大压摆率 - 0.16 mA 0.16 mA 0.16 mA -
最大供电电压 (Vsup) - 5.5 V 5.5 V 5.5 V -
最小供电电压 (Vsup) - 4.5 V 4.5 V 4.5 V -
标称供电电压 (Vsup) - 5 V 5 V 5 V -
表面贴装 - YES YES YES -
技术 - CMOS CMOS CMOS -
温度等级 - COMMERCIAL COMMERCIAL COMMERCIAL -
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
端子形式 - GULL WING GULL WING J BEND -
端子节距 - 0.5 mm 1.27 mm 1.27 mm -
端子位置 - DUAL DUAL DUAL -
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
宽度 - 8 mm 11.3 mm 7.62 mm -
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