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W2624NC160

Rectifier Diode, 1 Phase, 1 Element, 2624A, 1600V V(RRM), Silicon,

器件类别:分立半导体    二极管   

厂商名称:IXYS

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IXYS
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
GENERAL PURPOSE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-CEDB-N2
最大非重复峰值正向电流
30800 A
元件数量
1
相数
1
端子数量
2
最大输出电流
2624 A
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1600 V
最大反向恢复时间
27 µs
表面贴装
YES
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Date:- 7 May, 2003
Data Sheet Issue:- 1
Rectifier Diode
Type W2624NC160 to W2624NC250
Old Type No.: SW16-25CXC11C
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1600-2500
1700-2600
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)M
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
2624
2110
1311
4828
4218
28.0
30.8
3.92×10
4.74×10
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=85°C, (note 2)
Maximum average forward current. T
sink
=85°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Operating temperature range
Storage temperature range
2
2
-55 to +160
-55 to +190
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 160°C T
j
initial.
Data Sheet. Type W2624NC160 to W2624NC250 Issue 1
Page 1 of 9
May, 2003
WESTCODE
An IXYS Company
Characteristics
Rectifier Diode Type W2624NC160 to W2624NC250
PARAMETER
V
FM
V
FM
V
T0
r
T
I
RRM
I
RRM
Q
rr
Q
ra
I
rr
t
rr
R
thJK
F
W
t
Maximum peak forward voltage
Maximum peak forward voltage
Threshold voltage
Slope resistance
Peak reverse current
Peak reverse current
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=160
°
C.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP.
-
-
-
-
-
-
3100
2200
160
27
-
-
-
510
MAX. TEST CONDITIONS
(Note 1)
1.5
2.03
0.78
0.16
50
50
-
2600
-
-
0.022
0.044
26
-
Double side cooled
Single side cooled
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V
Rated V
RRM
Rated V
RRM
, T
j
=25°C
I
TM
=4500A
I
TM
=7870A
UNITS
V
V
V
mΩ
mA
mA
µC
µC
A
µs
K/W
K/W
kN
g
Data Sheet. Type W2624NC160 to W2624NC250 Issue 1
Page 2 of 9
May, 2003
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
16
18
20
22
24
25
V
DRM
V
DSM
V
RRM
V
1600
1800
2000
2200
2400
2500
Rectifier Diode Type W2624NC160 to W2624NC250
V
RSM
V
1700
1900
2100
2300
2500
2600
V
D
V
R
DC V
1050
1150
1250
1350
1450
1500
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I
AV
V
0
+
V
0
+
4
ff
r
s
W
AV
=
2
ff
r
s
2
W
AV
and:
T
=
R
th
T
=
T
j
max
T
Hs
Where V
0
=0.78V, r
s
=0.16mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
30°
0.0312
0.0543
0.0268
0.0509
60°
0.0285
0.0513
0.0257
0.0482
90°
0.0267
0.0496
0.0241
0.0471
120°
0.0255
0.0484
0.0233
0.0463
180°
0.0240
0.0469
0.022
0.044
270°
0.0228
0.0455
d.c.
0.0220
0.0440
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Data Sheet. Type W2624NC160 to W2624NC250 Issue 1
Page 3 of 9
May, 2003
WESTCODE
An IXYS Company
5.2 Calculating V
F
using ABCD Coefficients
Rectifier Diode Type W2624NC160 to W2624NC250
The on-state characteristic I
F
vs. V
F
, on page 6 is represented in two ways;
(i)
the well established V
0
and r
s
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
ln
(
I
F
)
+
C
I
F
+
D
I
F
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
F
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A
B
C
D
0.7560109
0.027321
9.716363×10
2.581858×10
-5
-4
160°C Coefficients
0.4728865
0.05340866
1.63729×10
-4
-3
-2.329493×10
Data Sheet. Type W2624NC160 to W2624NC250 Issue 1
Page 4 of 9
May, 2003
WESTCODE
An IXYS Company
5.3 D.C. Thermal Impedance Calculation
Rectifier Diode Type W2624NC160 to W2624NC250
t
τ
r
t
=
r
p
1
e
p
p
=
1
p
=
n
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C. Single Side Cooled
Term
r
p
1
0.0291698
5.67822
2
4.295845×10
1.123602
-3
3
7.57109×10
0.1407857
-3
4
2.195801×10
-3
5
1.628753×10
1.272749×10
-3
-3
τ
p
0.014381914
D.C. Double Side Cooled
Term
r
p
1
0.01177146
0.9495346
2
6.485814×10
0.1337950
-3
3
2.471007×10
0.01636628
-3
4
1.607109×10
1.255571×10
-3
-3
τ
p
6.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
i
0
rr
.
dt
K Factor
=
t
1
t
2
Data Sheet. Type W2624NC160 to W2624NC250 Issue 1
Page 5 of 9
May, 2003
查看更多>
参数对比
与W2624NC160相近的元器件有:W2624NC180、W2624NC240、W2624NC200、W2624NC220。描述及对比如下:
型号 W2624NC160 W2624NC180 W2624NC240 W2624NC200 W2624NC220
描述 Rectifier Diode, 1 Phase, 1 Element, 2624A, 1600V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2624A, 1800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2624A, 2400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 2624A, 2000V V(RRM), Silicon, DIODE 2624 A, 2200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
厂商名称 IXYS IXYS IXYS IXYS IXYS
Reach Compliance Code compliant unknown compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
最大非重复峰值正向电流 30800 A 30800 A 30800 A 30800 A 30800 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最大输出电流 2624 A 2624 A 2624 A 2624 A 2624 A
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1600 V 1800 V 2400 V 2000 V 2200 V
最大反向恢复时间 27 µs 27 µs 27 µs 27 µs 27 µs
表面贴装 YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 END END END END END
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