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W3DG6418V7D2SG

Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168

器件类别:存储    存储   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DIMM
包装说明
DIMM,
针数
168
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
其他特性
AUTO/SELF REFRESH
JESD-30 代码
R-XDMA-N168
JESD-609代码
e4
内存密度
1073741824 bit
内存集成电路类型
SYNCHRONOUS DRAM MODULE
内存宽度
64
功能数量
1
端口数量
1
端子数量
168
字数
16777216 words
字数代码
16000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16MX64
封装主体材料
UNSPECIFIED
封装代码
DIMM
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
自我刷新
YES
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子面层
Gold (Au)
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
White Electronic Designs
128MB - 16Mx64, SDRAM UNBUFFERED
FEATURES
PC100 and PC133 compatible
Burst Mode Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the
positive edge of the system clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
3.3V ± 0.3V Power Supply
168 Pin DIMM JEDEC
D2: 30.48mm (1.20")
W3DG6418V-D2
PRELIMINARY*
DESCRIPTION
The W3DG6418V is a 16Mx64 synchronous DRAM
module which consists of eight 16Mx8 SDRAM
components in TSOP II package and one 2K EEPROM
in an 8 Pin TSSOP package for Serial Presence Detect
which are mounted on a 168 Pin DIMM multilayer FR4
Substrate.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Front
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
CC
DQ14
DQ15
CB0*
CB1*
Vss
NC
NC
V
CC
WE#
DQM0
Pin
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Front
DQM1
CS0#
DNU
V
SS
A0
A2
A4
A6
A8
A10/AP
BA1
V
CC
V
CC
CLK0
V
SS
DNU
CS2#
DQM2
DQM3
DNU
V
CC
NC
NC
CB2*
CB3*
V
SS
DQ16
DQ17
Pin
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Front
DQ18
DQ19
V
CC
DQ20
NC
V
REF
*
CKE1*
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
CLK2
NC
WP***
SDA**
SCL**
V
CC
Pin
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
CC
DQ46
DQ47
CB4*
CB5*
V
SS
NC
NC
V
CC
CAS#
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1#
RAS#
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
CC
CLK1
A12*
V
SS
CKE0
CS3#*
DQM6
DQM7
A13*
V
CC
NC
NC
CB6*
CB7*
V
SS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
V
CC
DQ52
NC
V
REF
*
DNU
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
V
SS
CLK3
NC
SA0**
SA1**
SA2**
V
CC
PIN NAMES
A0 - A11
BA0-1
DQ0-63
CLK0, CLK1,
CLK2, CLK3
CKE0
CS0# - CS2#
RAS#
CAS#
WE#
DQM0-7
V
CC
V
SS
SDA
SCL
DNU
NC
WP
Address input (Multiplexed)
Select Bank
Data Input/Output
Clock input
Clock Enable input
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
DQM
Power Supply (3.3V)
Ground
Serial data I/O
Serial clock
Do not use
No Connect
Write Protect
** These pins should be NC in the system which
does not support SPD.
*** WP available on the WED3DG6318V-D2.
March 2006
Rev. 1
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
CS0#
DQM0
DQM4
W3DG6418V-D2
PRELIMINARY
DQM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS2#
DQM2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS0#
DQM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQM5
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS0#
DQM1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS0#
DQM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS0#
DQM6
DQM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS2#
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS2#
DQM3
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS2#
DQM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS2#
A0 ~ A11, BA0 & 1
RAS#
CAS#
WE#
CKE0
DQn
V
CC
Vss
10Ω
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SCL
WP
A0
SDA
A1
A2
WP
SA0 SA1 SA2
Every DQpin of SDRAM
One 0.1uF Capacitors
per each SDRAM
To all SDRAMs
March 2006
Rev. 1
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
TSTG
PD
IOS
Value
W3DG6418V-D2
PRELIMINARY
Units
V
V
°C
W
mA
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
8
50
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: V
SS
= 0V, 0°C
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
V
CC
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-10
T
A
Typ
3.3
3.0
+70°C
Max
3.6
V
CCQ
+0.3
0.8
0.4
10
Unit
V
V
V
V
V
μA
1
2
IOH= -2mA
IOL= -2mA
3
Note
Note:
1.
V
IH
(max)= 5.6V AC. The overshoot voltage duration is
3ns.
2.
V
IL
(min)= -2.0V AC. The undershoot voltage duration is
3ns.
3.
Any input 0V
V
IN
V
CC
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
T
A
= 25°C, f = 1MHz, V
CC
= 3.3V, V
REF
=1.4V
±
200mV
Parameter
Input Capacitance (A0-A11)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
Input Capacitance (CLK0-CLK3)
Input Capacitance (CS0#, CS2#)
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
Max
35.5
35.5
35.5
10
20
7
35.5
15
Unit
pF
pF
pF
pF
pF
pF
pF
pF
March 2006
Rev. 1
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
OPERATING CURRENT CHARACTERISTICS
V
CC
= 3.3V, 0°C
T
A
70°C
Parameters
Symbol
Conditions
W3DG6418V-D2
PRELIMINARY
Versions
133
100
720
Units
mA
Note
1
Operating Current
(One bank active)
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non-Power Down Mode
I
CC1
Burst Length = 1
t
RC
t
RC
(min)
I
OL
= 0mA
CKE
V
IL
(max), t
CC
= 10ns
CKE & CK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
=10ns
Input signals are charged one time during 20
CKE
V
IH
(min), CK
V
IL
(max), t
CC
=
Input signals are stable
CKE
V
IL
(max), t
CC
= 10ns
CKE & CK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are charged one time during 20ns
CKE
V
IH
(min), CK
V
IL
(max), t
CC
=
input signals are stable
Io = mA
Page burst
4 Banks activated
t
CCD
= 2CK
t
RC
t
RC
(min)
CKE
0.2V
720
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
16
16
160
80
40
40
240
200
880
880
mA
mA
mA
mA
mA
Active standby current in power-
down mode
Active standby in current non
power-down mode
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
mA
mA
mA
1
Operating current (Burst mode)
I
CC4
Refresh current
Self refresh current
Notes:
1.
Measured with outputs open.
2.
Refresh period is 64ms.
I
CC5
I
CC6
1600
16
1600
mA
mA
2
March 2006
Rev. 1
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ORDERING INFORMATION
Part Number
W3DG6418V10D2xx
W3DG6418V7D2xx
W3DG6418V75D2xx
Clock Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Height*
30.48 (1.20")
30.48 (1.20")
30.48 (1.20")
Part Number
W3DG6318V10D2xx
W3DG6318V7D2xx
W3DG6318V75D2xx
W3DG6418V-D2
PRELIMINARY
Clock Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Height*
30.48 (1.20")
30.48 (1.20")
30.48 (1.20")
Note: WP (write protect) is available on pin 81.
INDUSTRIAL TEMPERATURE
Ordering Information
W3DG6418V10D2I-xx
W3DG6418V7D2I-xx
W3DG6418V75D2I-xx
Clock Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Height*
30.48 (1.20")
30.48 (1.20")
30.48 (1.20")
PACKAGE DIMENSIONS
3.18
(0.125) (2X)
3.99
(0.157)
(2X)
133.48
(5.255 MAX.)
3.05
(0.120)
MAX.
30.48
(1.200)
17.78 MAX.
(0.700)
P1
11.43
(0.450)
8.89
(0.350)
6.35
(0.250)
42.16
(1.660)
36.83
(1.450)
6.35
(0.250)
115.57
(4.550)
54.61
(2.150)
3.99
(0.157)
MIN.
1.27 ± 0.10
(0.050 ± 0.004)
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).
March 2006
Rev. 1
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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