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W9712G6JB-3

DDR DRAM, 8MX16, 0.45ns, CMOS, PBGA84, 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84

器件类别:存储    存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Winbond(华邦电子)
零件包装代码
BGA
包装说明
TFBGA, BGA84,9X15,32
针数
84
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
0.45 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
333 MHz
I/O 类型
COMMON
交错的突发长度
4,8
JESD-30 代码
R-PBGA-B84
长度
12.5 mm
内存密度
134217728 bit
内存集成电路类型
DDR DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
84
字数
8388608 words
字数代码
8000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
组织
8MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA84,9X15,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
1.8 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
4,8
最大待机电流
0.005 A
最大压摆率
0.16 mA
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
8 mm
文档预览
W9712G6JB
2M
×
4 BANKS
×
16 BIT DDR2 SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
7.1
7.2
GENERAL DESCRIPTION ...................................................................................................................4
FEATURES ...........................................................................................................................................4
KEY PARAMETERS .............................................................................................................................5
BALL CONFIGURATION ......................................................................................................................6
BALL DESCRIPTION............................................................................................................................7
BLOCK DIAGRAM ................................................................................................................................8
FUNCTIONAL DESCRIPTION..............................................................................................................9
Power-up and Initialization Sequence ...................................................................................................9
Mode Register and Extended Mode Registers Operation ...................................................................10
7.2.1
7.2.2
7.2.2.1
7.2.2.2
7.2.2.3
7.2.2.4
7.2.3
7.2.3.1
7.2.3.2
7.2.3.3
7.2.4
7.2.5
7.2.5.1
7.3
7.3.1
7.3.2
7.3.3
7.3.4
7.3.5
7.3.6
7.3.7
7.3.8
7.3.9
7.3.10
7.3.11
7.4
7.4.1
7.4.1.1
Mode Register Set Command (MRS)...............................................................................10
Extend Mode Register Set Commands (EMRS) ..............................................................11
Extend Mode Register Set Command (1), EMR (1)................................................11
DLL Enable/Disable................................................................................................12
Extend Mode Register Set Command (2), EMR (2)................................................13
Extend Mode Register Set Command (3), EMR (3)................................................14
Off-Chip Driver (OCD) Impedance Adjustment ................................................................15
Extended Mode Register for OCD Impedance Adjustment ....................................16
OCD Impedance Adjust ..........................................................................................16
Drive Mode .............................................................................................................17
On-Die Termination (ODT)...............................................................................................18
ODT related timings .........................................................................................................18
MRS command to ODT update delay.....................................................................18
Bank Activate Command..................................................................................................20
Read Command ...............................................................................................................20
Write Command ...............................................................................................................20
Burst Read with Auto-precharge Command.....................................................................21
Burst Write with Auto-precharge Command .....................................................................21
Precharge All Command ..................................................................................................21
Self Refresh Entry Command ..........................................................................................21
Self Refresh Exit Command .............................................................................................21
Refresh Command ...........................................................................................................22
No-Operation Command ..................................................................................................23
Device Deselect Command..............................................................................................23
Posted
CAS
....................................................................................................................23
Examples of posted
CAS
operation......................................................................23
Command Function.............................................................................................................................20
Read and Write access modes ...........................................................................................................23
-1-
Publication Release Date: Mar. 15, 2010
Revision A01
W9712G6JB
7.4.2
7.4.3
7.4.4
7.4.5
7.5
7.6
Burst mode operation.......................................................................................................24
Burst read mode operation...............................................................................................25
Burst write mode operation ..............................................................................................25
Write data mask ...............................................................................................................26
Burst Interrupt .....................................................................................................................................26
Precharge operation............................................................................................................................27
7.6.1
7.6.2
Burst read operation followed by precharge.....................................................................27
Burst write operation followed by precharge ....................................................................27
Burst read with Auto-precharge........................................................................................28
Burst write with Auto-precharge .......................................................................................28
7.7
Auto-precharge operation ...................................................................................................................27
7.7.1
7.7.2
7.8
7.9
Refresh Operation...............................................................................................................................29
Power Down Mode..............................................................................................................................29
7.9.1
7.9.2
Power Down Entry ...........................................................................................................30
Power Down Exit..............................................................................................................30
7.10
8.
8.1
8.2
8.3
8.4
8.5
9.
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
4.1
9.9
9.10
Input clock frequency change during precharge power down .............................................................30
OPERATION MODE ...........................................................................................................................31
Command Truth Table ........................................................................................................................31
Clock Enable (CKE) Truth Table for Synchronous Transitions............................................................32
Data Mask (DM) Truth Table...............................................................................................................32
Function Truth Table ...........................................................................................................................33
Simplified Stated Diagram...................................................................................................................36
ELECTRICAL CHARACTERISTICS ...................................................................................................37
Absolute Maximum Ratings.................................................................................................................37
Operating Temperature Condition.......................................................................................................37
Recommended DC Operating Conditions ...........................................................................................37
ODT DC Electrical Characteristics ......................................................................................................38
Input DC Logic Level...........................................................................................................................38
Input AC Logic Level ...........................................................................................................................38
Capacitance ........................................................................................................................................39
Leakage and Output Buffer Characteristics ........................................................................................39
DC Characteristics ..............................................................................................................................40
IDD Measurement Test Parameters....................................................................................................42
AC Characteristics ..............................................................................................................................43
9.10.1
9.10.2
AC Characteristics and Operating Condition for -18 speed grade ...................................43
AC Characteristics and Operating Condition for -25/25I/25A/-3 speed grade ..................45
9.12
9.13
9.14
AC Input Test Conditions ....................................................................................................................65
Differential Input/Output AC Logic Levels ...........................................................................................65
AC Overshoot / Undershoot Specification ...........................................................................................66
9.14.1
9.14.2
AC Overshoot / Undershoot Specification for Address and Control Pins: ........................66
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins:..........66
10.
10.1
TIMING WAVEFORMS .......................................................................................................................67
Command Input Timing.......................................................................................................................67
-2-
Publication Release Date: Mar. 15, 2010
Revision A01
W9712G6JB
10.2
Timing of the CLK Signals...................................................................................................................67
10.3
ODT Timing for Active/Standby Mode.................................................................................................68
10.4
ODT Timing for Power Down Mode ....................................................................................................68
10.5
ODT Timing mode switch at entering power down mode ....................................................................69
10.6
ODT Timing mode switch at exiting power down mode ......................................................................70
10.7
Data output (read) timing ....................................................................................................................71
10.8
Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................71
10.9
Data input (write) timing ......................................................................................................................72
10.10
Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4)...........................................................72
10.11
Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4) ......................................73
10.12
Seamless burst write operation: RL = 5 ( WL = 4, BL = 4).........................................................73
10.13
Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8) .............................................................74
10.14
Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) ..................................................74
10.15
Write operation with Data Mask: WL=3, AL=0, BL=4) ...............................................................75
10.16
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP
2clks) ............76
10.17
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP
2clks) ............76
10.18
Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP
2clks) ............77
10.19
Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP
2clks) ............77
10.20
Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP > 2clks) ............78
10.21
Burst write operation followed by precharge: WL = (RL-1) = 3 ..................................................78
10.22
Burst write operation followed by precharge: WL = (RL-1) = 4 ..................................................79
10.23
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP
2clks) ...............79
10.24
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP > 2clks) ...............80
10.25
Burst read with Auto-precharge followed by an activation to the same bank (tRC Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP
2clks).......................................................................................80
10.26
Burst read with Auto-precharge followed by an activation to the same bank (tRP Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP
2clks).......................................................................................81
10.27
Burst write with Auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3.................................81
10.28
Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3 .......................82
10.29
Self Refresh Timing ...................................................................................................................82
10.30
Active Power Down Mode Entry and Exit Timing.......................................................................83
10.31
Precharged Power Down Mode Entry and Exit Timing ..............................................................83
10.32
Clock frequency change in precharge Power Down mode ........................................................84
11.
12.
PACKAGE SPECIFICATION ..............................................................................................................85
Package Outline WBGA-84 (8x12.5 mm
2
).......................................................................................................85
REVISION HISTORY ..........................................................................................................................86
-3-
Publication Release Date: Mar. 15, 2010
Revision A01
W9712G6JB
1. GENERAL DESCRIPTION
The W9712G6JB is a 128M bits DDR2 SDRAM, organized as 2,097,152 words
×
4 banks
×
16 bits.
This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general
applications. W9712G6JB is sorted into the following speed grades: -18, -25, 25I, 25A and -3. The -18
is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25A are compliant to the DDR2-800
(5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade and 25A automotive grade which is
guaranteed to support -40°C
T
CASE
95°C). The -3 is compliant to the DDR2-667 (5-5-5)
specification.
All of the control and address inputs are synchronized with a pair of externally supplied differential
clocks. Inputs are latched at the cross point of differential clocks (CLK rising and
CLK
falling). All
I/Os are synchronized with a single ended DQS or differential DQS-
DQS
pair in a source
synchronous fashion.
2. FEATURES
Power Supply: V
DD
, V
DDQ
= 1.8 V
±
0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and
DQS
) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and
CLK
)
Data masks (DM) for write data.
Commands entered on each positive CLK edge, data and data mask are referenced to both edges
of DQS
Posted
CAS
programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal
quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 84 Ball (8X12.5 mm
2
), using Lead free materials with RoHS compliant
-4-
Publication Release Date: Mar. 15, 2010
Revision A01
W9712G6JB
3. KEY PARAMETERS
SPEED GRADE
SYM.
Bin(CL-tRCD-tRP)
Part Number Extension
@CL = 7
@CL = 6
t
CK(avg)
DDR2-1066
7-7-7
-18
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Min.
Min.
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
1.875 nS
7.5 nS
2.5 nS
7.5 nS
3 nS
7.5 nS
3.75 nS
7.5 nS
13.125 nS
13.125 nS
53.125 nS
40 nS
80 mA
95 mA
165 mA
160 mA
95 mA
3 mA
195 mA
DDR2-800
5-5-5/6-6-6
-25/25I/25A
2.5 nS
8 nS
2.5 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
12.5 nS
12.5 nS
52.5 nS
40 nS
75 mA
90 mA
140 mA
135 mA
85 mA
3 mA
170 mA
DDR2-667
5-5-5
-3
3 nS
8 nS
3.75 nS
8 nS
5 nS
8 nS
15 nS
15 nS
55 nS
40 nS
70 mA
85 mA
130 mA
125 mA
80 mA
3 mA
160 mA
Average clock period
@CL = 5
@CL = 4
@CL = 3
t
RCD
t
RP
t
RC
t
RAS
I
DD0
I
DD1
I
DD4R
I
DD4W
I
DD5B
I
DD6
I
DD7
Active to Read/Write Command Delay Time
Precharge to Active Command Period
Active to Ref/Active Command Period
Active to Precharge Command Period
Operating current
Operation current (Single bank)
Operating burst read current
Operating burst write current
Burst refresh current
Self refresh current
Operating bank interleave read current
-5-
Publication Release Date: Mar. 15, 2010
Revision A01
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参数对比
与W9712G6JB-3相近的元器件有:W9712G6JB-18、W9712G6JB-25、W9712G6JB-25A、W9712G6JB-25I。描述及对比如下:
型号 W9712G6JB-3 W9712G6JB-18 W9712G6JB-25 W9712G6JB-25A W9712G6JB-25I
描述 DDR DRAM, 8MX16, 0.45ns, CMOS, PBGA84, 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 DDR DRAM, 8MX16, 0.35ns, CMOS, PBGA84, 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84, 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84, 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84, 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子)
零件包装代码 BGA BGA BGA BGA BGA
包装说明 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
针数 84 84 84 84 84
Reach Compliance Code compliant compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 0.45 ns 0.35 ns 0.4 ns 0.4 ns 0.4 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 333 MHz 533 MHz 400 MHz 400 MHz 400 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON
交错的突发长度 4,8 4,8 4,8 4,8 4,8
JESD-30 代码 R-PBGA-B84 R-PBGA-B84 R-PBGA-B84 R-PBGA-B84 R-PBGA-B84
长度 12.5 mm 12.5 mm 12.5 mm 12.5 mm 12.5 mm
内存密度 134217728 bit 134217728 bi 134217728 bi 134217728 bi 134217728 bi
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 16 16 16 16 16
功能数量 1 1 1 1 1
端口数量 1 1 1 1 1
端子数量 84 84 84 84 84
字数 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 95 °C 95 °C
组织 8MX16 8MX16 8MX16 8MX16 8MX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA
封装等效代码 BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES
连续突发长度 4,8 4,8 4,8 4,8 4,8
最大待机电流 0.005 A 0.005 A 0.005 A 0.005 A 0.005 A
最大压摆率 0.16 mA 0.195 mA 0.17 mA 0.17 mA 0.17 mA
最大供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 OTHER OTHER OTHER INDUSTRIAL INDUSTRIAL
端子形式 BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 8 mm 8 mm 8 mm 8 mm 8 mm
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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