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W97BH2LBQX2E

DDR DRAM, 256MX32, CMOS, PBGA168, WFBGA-168

器件类别:存储    存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Winbond(华邦电子)
包装说明
VFBGA,
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
MULTI BANK PAGE BURST
其他特性
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
JESD-30 代码
S-PBGA-B168
长度
12 mm
内存密度
8589934592 bit
内存集成电路类型
DDR DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
168
字数
268435456 words
字数代码
256000000
工作模式
SYNCHRONOUS
组织
256MX32
封装主体材料
PLASTIC/EPOXY
封装代码
VFBGA
封装形状
SQUARE
封装形式
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
座面最大高度
0.8 mm
自我刷新
YES
最大供电电压 (Vsup)
1.3 V
最小供电电压 (Vsup)
1.14 V
标称供电电压 (Vsup)
1.2 V
表面贴装
YES
技术
CMOS
端子形式
BALL
端子节距
0.5 mm
端子位置
BOTTOM
宽度
12 mm
文档预览
W97BH6LB / W97BH2LB
LPDDR2-S4B 2Gb
Table of Contents-
1.
2.
3.
4.
4.1
4.2
5.
5.1
5.2
6.
7.
7.1
7.2
GENERAL DESCRIPTION ............................................................................................................................................ 6
FEATURES .................................................................................................................................................................... 6
ORDER INFORMATION ................................................................................................................................................ 7
PIN CONFIGURATION .................................................................................................................................................. 8
134 Ball VFBGA ............................................................................................................................................................. 8
168 Ball WFBGA ............................................................................................................................................................ 9
PIN DESCRIPTION ..................................................................................................................................................... 10
Basic Functionality ....................................................................................................................................................... 10
Addressing Table ......................................................................................................................................................... 11
BLOCK DIAGRAM ....................................................................................................................................................... 12
FUNCTIONAL DESCRIPTION..................................................................................................................................... 13
Simplified LPDDR2 State Diagram .............................................................................................................................. 13
7.1.1
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14
Power Ramp and Device Initialization.......................................................................................................................... 15
Timing Parameters for Initialization .............................................................................................................................. 17
Power Ramp and Initialization Sequence .................................................................................................................... 17
Initialization after Reset (without Power ramp) ............................................................................................................. 18
Power-off Sequence .................................................................................................................................................... 18
Timing Parameters Power-Off ..................................................................................................................................... 18
Uncontrolled Power-Off Sequence .............................................................................................................................. 18
Mode Register Assignment and Definition ................................................................................................................... 19
Mode Register Assignment ............................................................................................................................... 19
MR0_Device Information (MA[7:0] = 00H) ................................................................................................................... 20
MR1_Device Feature 1 (MA[7:0] = 01H) ...................................................................................................................... 20
Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21
Non Wrap Restrictions ...................................................................................................................................... 21
MR2_Device Feature 2 (MA[7:0] = 02H) ...................................................................................................................... 22
MR3_I/O Configuration 1 (MA[7:0] = 03H) ................................................................................................................... 22
MR4_Device Temperature (MA[7:0] = 04H) ................................................................................................................. 22
MR5_Basic Configuration 1 (MA[7:0] = 05H) ............................................................................................................... 23
MR6_Basic Configuration 2 (MA[7:0] = 06H) ............................................................................................................... 23
MR7_Basic Configuration 3 (MA[7:0] = 07H) ............................................................................................................... 23
MR8_Basic Configuration 4 (MA[7:0] = 08H) ............................................................................................................... 23
MR9_Test Mode (MA[7:0] = 09H) ................................................................................................................................ 23
MR10_Calibration (MA[7:0] = 0AH) ............................................................................................................................. 24
MR16_PASR_Bank Mask (MA[7:0] = 10H) .................................................................................................................. 24
MR17_PASR_Segment Mask (MA[7:0] = 11H)............................................................................................................ 25
MR32_DQ Calibration Pattern A (MA[7:0] = 20H) ........................................................................................................ 25
MR40_DQ Calibration Pattern B (MA[7:0] = 28H) ........................................................................................................ 25
MR63_Reset (MA[7:0] = 3FH): MRW only ................................................................................................................... 25
Activate Command ...................................................................................................................................................... 26
Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 26
tFAW Timing ..................................................................................................................................................... 27
Command Input Setup and Hold Timing............................................................................................................ 27
CKE Input Setup and Hold Timing .................................................................................................................... 28
Read and Write Access Modes.................................................................................................................................... 28
Burst Read Command ................................................................................................................................................. 28
Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 29
Data Output (Read) Timing (tDQSCKmin)......................................................................................................... 30
Power-up, Initialization, and Power-Off ........................................................................................................................ 15
7.3
Mode Register Definition .............................................................................................................................................. 19
7.3.1
7.3.1.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.4
7.3.5
7.3.6
7.3.7
7.3.8
7.3.9
7.3.10
7.3.11
7.3.12
7.3.13
7.3.14
7.3.15
7.3.16
7.3.17
7.4
Command Definitions and Timing Diagrams ................................................................................................................ 26
7.4.1
7.4.1.1
7.4.1.2
7.4.1.3
7.4.1.4
7.4.2
7.4.3
7.4.3.1
7.4.3.2
Publication Release Date: Oct. 11, 2016
Revision: A01-002
-1-
W97BH6LB / W97BH2LB
7.4.3.3
7.4.3.4
7.4.3.5
7.4.3.6
7.4.3.7
7.4.3.8
7.4.3.9
7.4.4
7.4.4.1
7.4.5
7.4.5.1
7.4.5.2
7.4.5.3
7.4.5.4
7.4.6
7.4.6.1
7.4.7
7.4.7.1
7.4.7.2
7.4.8
7.4.8.1
7.4.9
7.4.9.1
7.4.10
7.4.10.1
7.4.10.2
7.4.11
7.4.11.1
7.4.12
7.4.13
7.4.13.1
7.4.14
7.4.14.1
7.4.14.2
7.4.15
7.4.15.1
7.4.16
7.4.16.1
7.4.16.2
7.4.16.3
7.4.16.4
7.4.16.5
7.4.16.6
7.4.16.7
7.4.17
7.4.18
7.4.19
7.4.20
7.4.20.1
7.4.20.2
7.4.20.3
7.4.21
7.4.21.1
7.4.21.2
7.4.21.3
7.4.22
Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 30
Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 31
LPDDR2: tDQSCKDL Timing ............................................................................................................................ 31
LPDDR2: tDQSCKDM Timing ........................................................................................................................... 32
LPDDR2: tDQSCKDS Timing............................................................................................................................ 32
Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 33
Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 33
Reads Interrupted by a Read....................................................................................................................................... 34
Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 34
Burst Write Operation .................................................................................................................................................. 34
Data Input (Write) Timing .................................................................................................................................. 35
Burst Write: WL = 1, BL= 4 ............................................................................................................................... 35
Burst Write Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 36
Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 36
Writes Interrupted by a Write ....................................................................................................................................... 37
Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 37
Burst Terminate ........................................................................................................................................................... 37
Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 38
Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 38
Write Data Mask .......................................................................................................................................................... 39
Write Data Mask Timing .................................................................................................................................... 39
Precharge Operation ................................................................................................................................................... 40
Bank Selection for Precharge by Address Bits .................................................................................................. 40
Burst Read Operation Followed by Precharge ............................................................................................................. 40
Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 41
Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 41
Burst Write Followed by Precharge ............................................................................................................................. 42
Burst Write Followed by Precharge: WL = 1, BL = 4.......................................................................................... 42
Auto Precharge Operation ........................................................................................................................................... 43
Burst Read with Auto-Precharge ................................................................................................................................. 43
Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 43
Burst Write with Auto-Precharge.................................................................................................................................. 44
Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 44
Precharge & Auto Precharge Clarification ......................................................................................................... 45
Refresh Command ...................................................................................................................................................... 46
Command Scheduling Separations Related to Refresh ..................................................................................... 47
LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 47
Definition of tSRF .............................................................................................................................................. 48
Regular, Distributed Refresh Pattern ................................................................................................................. 50
Allowable Transition from Repetitive Burst Refresh ........................................................................................... 50
NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 51
Recommended Self-Refresh Entry and Exit ...................................................................................................... 51
All Bank Refresh Operation............................................................................................................................... 52
Per Bank Refresh Operation ............................................................................................................................. 52
Self Refresh Operation ................................................................................................................................................ 53
Partial Array Self-Refresh: Bank Masking .................................................................................................................... 54
Partial Array Self-Refresh: Segment Masking .............................................................................................................. 54
Mode Register Read Command .................................................................................................................................. 55
Mode Register Read Timing Example: RL = 3, tMRR = 2.................................................................................. 56
Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 57
Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 57
Temperature Sensor.................................................................................................................................................... 58
Temperature Sensor Timing ............................................................................................................................. 59
DQ Calibration .................................................................................................................................................. 59
MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 60
Mode Register Write Command................................................................................................................................... 61
Publication Release Date: Oct. 11, 2016
Revision: A01-002
-2-
W97BH6LB / W97BH2LB
7.4.22.1
7.4.22.2
7.4.23
7.4.24
7.4.24.1
7.4.24.2
7.4.24.3
7.4.24.4
7.4.24.5
7.4.25
7.4.25.1
7.4.25.2
7.4.25.3
7.4.25.4
7.4.25.5
7.4.25.6
7.4.25.7
7.4.25.8
7.4.25.9
7.4.25.10
7.4.25.11
7.4.25.12
7.4.26
7.4.26.1
7.4.27
7.4.28
Mode Register Write Timing Example: RL = 3, tMRW = 5 ................................................................................. 61
Truth Table for Mode Register Read (MRR) and Mode Register Write (MRW) .................................................. 61
Mode Register Write Reset (MRW Reset) ................................................................................................................... 62
Mode Register Write ZQ Calibration Command ........................................................................................................... 62
ZQ Calibration Initialization Timing Example ..................................................................................................... 63
ZQ Calibration Short Timing Example ............................................................................................................... 63
ZQ Calibration Long Timing Example ................................................................................................................ 64
ZQ Calibration Reset Timing Example .............................................................................................................. 64
ZQ External Resistor Value, Tolerance, and Capacitive Loading ...................................................................... 65
Power-Down................................................................................................................................................................ 65
Basic Power Down Entry and Exit Timing ......................................................................................................... 65
CKE Intensive Environment .............................................................................................................................. 66
Refresh to Refresh Timing with CKE Intensive Environment ............................................................................. 66
Read to Power-Down Entry............................................................................................................................... 67
Read with Auto Precharge to Power-Down Entry .............................................................................................. 67
Write to Power-Down Entry ............................................................................................................................... 68
Write with Auto Precharge to Power-Down Entry .............................................................................................. 68
Refresh Command to Power-Down Entry.......................................................................................................... 69
Activate Command to Power-Down Entry ......................................................................................................... 69
Precharge/Precharge-All Command to Power-Down Entry ............................................................................... 69
Mode Register Read to Power-Down Entry ....................................................................................................... 70
MRW Command to Power-Down Entry ............................................................................................................. 70
Deep Power-Down ...................................................................................................................................................... 70
Deep Power Down Entry and Exit Timing.......................................................................................................... 71
Input Clock Stop and Frequency Change .................................................................................................................... 71
No Operation Command .............................................................................................................................................. 72
Command Truth Table................................................................................................................................................. 73
CKE Truth Table.......................................................................................................................................................... 74
Current State Bank n - Command to Bank n Truth Table ............................................................................................. 75
Current State Bank n - Command to Bank m Truth Table ............................................................................................ 77
Data Mask Truth Table ................................................................................................................................................ 78
7.5
Truth Tables ................................................................................................................................................................. 72
7.5.1
7.5.2
7.5.3
7.5.4
7.5.5
8.
8.1
8.2
ELECTRICAL CHARACTERISTIC .............................................................................................................................. 79
Absolute Maximum DC Ratings ................................................................................................................................... 79
AC & DC Operating Conditions .................................................................................................................................... 79
8.2.1
8.2.1.1
8.2.2
8.2.3
8.2.4
8.2.4.1
8.2.4.1.1
8.2.4.1.2
8.2.4.1.3
8.2.4.2
8.2.4.2.1
8.2.4.3
8.2.4.3.1
8.2.4.4
8.2.4.4.1
8.2.4.4.2
8.2.4.5
8.2.4.6
8.2.4.7
8.2.4.8
Recommended DC Operating Conditions .................................................................................................................... 79
Recommended DC Operating Conditions ......................................................................................................... 79
Input Leakage Current ................................................................................................................................................. 80
Operating Temperature Conditions .............................................................................................................................. 80
AC and DC Input Measurement Levels ........................................................................................................................ 80
AC and DC Logic Input Levels for Single-Ended Signals................................................................................... 80
Single-Ended AC and DC Input Levels for CA and CS_n Inputs ....................................................................... 80
Single-Ended AC and DC Input Levels for CKE ................................................................................................ 81
Single-Ended AC and DC Input Levels for DQ and DM ..................................................................................... 81
Vref Tolerances ................................................................................................................................................ 81
VRef(DC) Tolerance and VRef AC-Noise Limits................................................................................................ 82
Input Signal....................................................................................................................................................... 83
LPDDR2-800 Input Signal ................................................................................................................................. 83
AC and DC Logic Input Levels for Differential Signals ....................................................................................... 84
Differential Signal Definition .............................................................................................................................. 84
Differential swing requirements for clock (CK_t - CK_c) and strobe (DQS_t - DQS_c) ...................................... 84
Single-Ended Requirements for Differential Signals .......................................................................................... 85
Differential Input Cross Point Voltage ................................................................................................................ 86
Slew Rate Definitions for Single-Ended Input Signals ....................................................................................... 87
Slew Rate Definitions for Differential Input Signals ............................................................................................ 87
Publication Release Date: Oct. 11, 2016
Revision: A01-002
-3-
W97BH6LB / W97BH2LB
8.2.5
8.2.5.1
8.2.5.2
8.2.5.3
8.2.5.4
8.2.5.5
8.2.6
8.2.6.1
8.2.6.2
8.2.6.3
8.2.6.4
8.2.6.5
8.2.6.6
8.2.6.7
AC and DC Output Measurement Levels ..................................................................................................................... 88
Single Ended AC and DC Output Levels ........................................................................................................... 88
Differential AC and DC Output Levels ............................................................................................................... 88
Single Ended Output Slew Rate ........................................................................................................................ 88
Differential Output Slew Rate ............................................................................................................................ 90
Overshoot and Undershoot Specifications ........................................................................................................ 91
Output buffer Characteristics ....................................................................................................................................... 92
HSUL_12 Driver Output Timing Reference Load ............................................................................................... 92
RON
PU
and RON
PD
Resistor Definition .............................................................................................................. 92
RON
PU
and RON
PD
Characteristics with ZQ Calibration ..................................................................................... 93
Output Driver Temperature and Voltage Sensitivity ........................................................................................... 93
RON
PU
and RON
PD
Characteristics without ZQ Calibration ................................................................................ 94
RZQ I-V Curve .................................................................................................................................................. 95
Input/Output Capacitance ................................................................................................................................. 97
IDD Measurement Conditions ...................................................................................................................................... 98
Definition of Switching for CA Input Signals ...................................................................................................... 98
Definition of Switching for IDD4R ...................................................................................................................... 99
Definition of Switching for IDD4W ..................................................................................................................... 99
IDD Specifications ..................................................................................................................................................... 100
LPDDR2 IDD Specification Parameters and Operating Conditions, -40°C~85°C (x16, x32) ............................. 100
IDD6 Partial Array Self-Refresh Current, -40°C~85°C (x16, x32) ..................................................................... 102
Definition for tCK(avg) and nCK................................................................................................................................. 102
Definition for tCK(abs) ............................................................................................................................................... 102
Definition for tCH(avg) and tCL(avg) .......................................................................................................................... 103
Definition for tJIT(per) ................................................................................................................................................ 103
Definition for tJIT(cc) ................................................................................................................................................. 103
Definition for tERR(nper) ........................................................................................................................................... 103
Definition for duty Dycle Jitter tJIT(duty) .................................................................................................................... 104
Definition for tCK(abs), tCH(abs) and tCL(abs) .......................................................................................................... 104
Clock Period Jitter Effects on Core Timing Parameters ............................................................................................. 104
Cycle Time De-rating for Core Timing Parameters .......................................................................................... 104
Clock Cycle De-rating for Core Timing Parameters ......................................................................................... 105
Clock Jitter Effects on Command/Address Timing Parameters .................................................................................. 105
Clock Jitter Effects on Read tTiming Parameters ....................................................................................................... 105
tRPRE ............................................................................................................................................................ 105
tLZ(DQ), tHZ(DQ), tDQSCK, tLZ(DQS), tHZ(DQS) ......................................................................................... 105
tQSH, tQSL..................................................................................................................................................... 105
tRPST ............................................................................................................................................................. 106
Clock Jitter Effects on Write Timing Parameters ........................................................................................................ 106
tDS, tDH ......................................................................................................................................................... 106
tDSS, tDSH..................................................................................................................................................... 106
tDQSS ............................................................................................................................................................ 106
Refresh Requirement Parameters ............................................................................................................................. 107
LPDDR2 AC Timing .................................................................................................................................................. 108
CA and CS_n Setup, Hold and Derating .................................................................................................................... 113
CA and CS_n Setup and Hold Base-Values for 1V/nS .................................................................................... 113
Derating Values LPDDR2 tIS/tIH - AC/DC Based AC220 ................................................................................ 114
Required Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition......................................................... 114
Nominal Slew Rate and tVAC for Setup Time tIS for CA and CS_n with Respect to Clock .............................. 115
Nominal Slew Rate for Hold Time tIH for CA and CS_n with Respect to Clock ................................................ 116
8.3
IDD Specification Parameters and Test Conditions ..................................................................................................... 98
8.3.1
8.3.1.1
8.3.1.2
8.3.1.3
8.3.2
8.3.2.1
8.3.2.2
8.4
Clock Specification..................................................................................................................................................... 102
8.4.1
8.4.2
8.4.3
8.4.4
8.4.5
8.4.6
8.4.7
8.4.8
8.5
Period Clock Jitter ...................................................................................................................................................... 104
8.5.1
8.5.1.1
8.5.1.2
8.5.2
8.5.3
8.5.3.1
8.5.3.2
8.5.3.3
8.5.3.4
8.5.4
8.5.4.1
8.5.4.2
8.5.4.3
8.6
8.7
Refresh Requirements ............................................................................................................................................... 107
8.6.1
8.7.1
8.7.2
8.7.2.1
8.7.2.2
8.7.2.3
8.7.2.4
8.7.2.5
AC Timings ................................................................................................................................................................ 108
Publication Release Date: Oct. 11, 2016
Revision: A01-002
-4-
W97BH6LB / W97BH2LB
8.7.2.6
8.7.2.7
8.7.3
8.7.3.1
8.7.3.2
8.7.3.3
8.7.3.4
8.7.3.5
8.7.3.6
8.7.3.7
Tangent Line for Setup Time tIS for CA and CS_n with Respect to Clock ....................................................... 117
Tangent Line for Hold Time tIH for CA and CS_n with Respect to Clock ......................................................... 118
Data Setup, Hold and Slew Rate Derating ................................................................................................................. 119
Data Setup and Hold Base-Values .................................................................................................................. 119
Derating Values LPDDR2 tDS/tDH - AC/DC Based AC220 ............................................................................. 120
Required Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition......................................................... 120
Nominal Slew Rate and tVAC for Setup Time tDS for DQ with Respect to Strobe ........................................... 121
Nominal Slew Rate for Hold time tDH for DQ with Respect to Strobe .............................................................. 122
Tangent Line for Setup Time tDS for DQ with Respect to Strobe .................................................................... 123
Tangent Line for Hold Time tDH for DQ with Respect to Strobe ...................................................................... 124
9.
10.
PACKAGE DIMENSIONS .......................................................................................................................................... 125
REVISION HISTORY ................................................................................................................................................. 127
Publication Release Date: Oct. 11, 2016
Revision: A01-002
-5-
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参数对比
与W97BH2LBQX2E相近的元器件有:W97BH2LBQX2I。描述及对比如下:
型号 W97BH2LBQX2E W97BH2LBQX2I
描述 DDR DRAM, 256MX32, CMOS, PBGA168, WFBGA-168 DDR DRAM, 256MX32, CMOS, PBGA168, WFBGA-168
是否Rohs认证 符合 符合
厂商名称 Winbond(华邦电子) Winbond(华邦电子)
包装说明 VFBGA, VFBGA,
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
访问模式 MULTI BANK PAGE BURST MULTI BANK PAGE BURST
其他特性 SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
JESD-30 代码 S-PBGA-B168 S-PBGA-B168
长度 12 mm 12 mm
内存密度 8589934592 bit 8589934592 bit
内存集成电路类型 DDR DRAM DDR DRAM
内存宽度 32 32
功能数量 1 1
端口数量 1 1
端子数量 168 168
字数 268435456 words 268435456 words
字数代码 256000000 256000000
工作模式 SYNCHRONOUS SYNCHRONOUS
组织 256MX32 256MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA VFBGA
封装形状 SQUARE SQUARE
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
座面最大高度 0.8 mm 0.8 mm
自我刷新 YES YES
最大供电电压 (Vsup) 1.3 V 1.3 V
最小供电电压 (Vsup) 1.14 V 1.14 V
标称供电电压 (Vsup) 1.2 V 1.2 V
表面贴装 YES YES
技术 CMOS CMOS
端子形式 BALL BALL
端子节距 0.5 mm 0.5 mm
端子位置 BOTTOM BOTTOM
宽度 12 mm 12 mm
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