W9825G6DH
4M
×
4 BANKS
×
16 BITS SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION ......................................................................................................... 3
FEATURES ................................................................................................................................. 3
AVAILABLE PART NUMBER...................................................................................................... 4
PIN CONFIGURATION ............................................................................................................... 4
PIN DESCRIPTION..................................................................................................................... 5
BLOCK DIAGRAM ...................................................................................................................... 6
FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
7.13
7.14
7.15
7.16
7.17
7.18
7.19
7.20
8.
9.
Power Up and Initialization ............................................................................................. 7
Programming Mode Register.......................................................................................... 7
Bank Activate Command ................................................................................................ 7
Read and Write Access Modes ...................................................................................... 7
Burst Read Command .................................................................................................... 8
Burst Write Command .................................................................................................... 8
Read Interrupted by a Read ........................................................................................... 8
Read Interrupted by a Write............................................................................................ 8
Write Interrupted by a Write............................................................................................ 8
Write Interrupted by a Read............................................................................................ 8
Burst Stop Command ..................................................................................................... 8
Addressing Sequence of Sequential Mode .................................................................... 9
Addressing Sequence of Interleave Mode...................................................................... 9
Auto-precharge Command ........................................................................................... 10
Precharge Command.................................................................................................... 10
Self Refresh Command ................................................................................................ 10
Power Down Mode ....................................................................................................... 11
No Operation Command............................................................................................... 11
Deselect Command ...................................................................................................... 11
Clock Suspend Mode.................................................................................................... 11
OPERATION MODE ................................................................................................................. 12
ELECTRICAL CHARACTERISTICS......................................................................................... 13
9.1
9.2
Absolute Maximum Ratings .......................................................................................... 13
Recommended DC Operating Conditions .................................................................... 13
Publication Release Date: Aug. 13, 2007
Revision A10
-1-
W9825G6DH
9.3
9.4
9.5
10.
10.1
10.2
10.3
10.4
11.
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
11.10
11.11
11.12
11.13
11.14
11.15
11.16
11.17
11.18
11.19
11.20
11.21
11.22
12.
13.
12.1
Capacitance .................................................................................................................. 13
DC Characteristics ........................................................................................................ 14
AC Characteristics and Operating Condition................................................................ 15
Command Input Timing ................................................................................................ 18
Read Timing.................................................................................................................. 19
Control Timing of Input/Output Data ............................................................................. 20
Mode Register Set Cycle .............................................................................................. 21
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 22
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)........... 23
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 24
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)........... 25
Interleaved Bank Write (Burst Length = 8) ................................................................... 26
Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 27
Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 28
Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 29
Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 30
Auto-precharge Write (Burst Length = 4) .................................................................... 31
Auto Refresh Cycle ..................................................................................................... 32
Self Refresh Cycle....................................................................................................... 33
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)............................ 34
Power Down Mode ...................................................................................................... 35
Auto-precharge Timing (Read Cycle).......................................................................... 36
Auto-precharge Timing (Write Cycle).......................................................................... 37
Timing Chart of Read to Write Cycle........................................................................... 38
Timing Chart of Write to Read Cycle........................................................................... 38
Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 39
Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 39
CKE/DQM Input Timing (Write Cycle)......................................................................... 40
CKE/DQM Input Timing (Read Cycle)......................................................................... 41
54L TSOP II - 400 mil ................................................................................................... 42
TIMING WAVEFORMS ............................................................................................................. 18
OPERATING TIMING EXAMPLE ............................................................................................. 22
PACKAGE SPECIFICATION .................................................................................................... 42
REVISION HISTORY ................................................................................................................ 43
-2-
Publication Release Date: Aug. 13, 2007
Revision A10
W9825G6DH
1. GENERAL DESCRIPTION
W9825G6DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words
×
4 banks
×
16 bits. Using pipelined architecture and 0.11 µm process technology,
W9825G6DH delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the
personal computer industrial standard, W9825G6DH is sorted into the following speed grades: -6/-6C/-
6I and -75/75I. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The – 6C is
compliant to the 166MHz/CL3 specification. The -6I is compliant to the 166MHz/CL3 specification (the
-6I grade which is guaranteed to support -40°C ~ 85°C). The -75/75I is compliant to the 133MHz/CL3
specification (the 75I grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G6DH is ideal for main memory in
high performance applications.
2. FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
3.3V
±
0.3V Power Supply
Up to 166 MHz Clock Frequency
4,194,304 Words
×
4 Banks
×
16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power Down Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Pb free with RoHS compliant
-3-
Publication Release Date:Aug. 13, 2007
Revision A10
W9825G6DH
3. AVAILABLE PART NUMBER
PART NUMBER
SPEED
GRADE
SELF REFRESH
CURRENT (MAX)
OPERATING
TEMPERATURE
W9825G6DH-6
W9825G6DH-6C
W9825G6DH-6I
W9825G6DH-75
W9825G6DH75I
166MHz/CL3
or
133MHz/CL2
166MHz/CL3
166MHz/CL3
133MHz/CL3
133MHz/CL3
3mA
3mA
3mA
3mA
3mA
0°C ~ 70°C
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
-40°C ~ 85°C
4. PIN CONFIGURATION
V
CC
DQ0
V
C C
Q
DQ1
DQ2
V
SS
Q
DQ3
DQ4
V
C C
Q
DQ5
DQ6
V
SS
Q
DQ7
V
CC
LDQM
WE
CAS
RAS
CS
BS0
BS1
A10/AP
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
D Q15
V
SS
Q
D Q14
D Q13
V
C C
Q
D Q12
D Q11
V
SS
Q
D Q10
D Q9
V
C C
Q
D Q8
V
SS
NC
U DQM
C LK
C KE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
-4-
Publication Release Date: Aug. 13, 2007
Revision A10
W9825G6DH
5. PIN DESCRIPTION
PIN NUMBER
PIN NAME
FUNCTION
DESCRIPTION
23−26, 22,
29−36
20, 21
A0−A12
BS0, BS1
Address
Bank Select
Multiplexed pins for row and column address.
Row address: A0−A12. Column address: A0−A8.
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
DQ0−DQ15
45, 47, 48, 50,
51, 53
19
CS
Data
Multiplexed pins for data output and input.
Input/Output
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
Chip Select
18
RAS
Command input. When sampled at the rising edge of
Row Address
the clock,
RAS , CAS and
WE
define the operation
Strobe
to be executed.
17
16
CAS
WE
Column
Address
Strobe
Referred to
RAS
Write Enable Referred to
RAS
The output buffer is placed at Hi-Z(with latency of 2)
Input/Output when DQM is sampled high in read cycle. In write
Mask
cycle, sampling DQM high will block the write operation
with zero latency.
Clock Inputs
System clock used to sample inputs on the rising edge
of clock.
15, 39
LDQM,
UDQM
CLK
CKE
V
CC
V
SS
V
CCQ
V
SSQ
NC
38
37
1, 14, 27
28, 41, 54
3, 9, 43, 49
6, 12, 46, 52
40
CKE controls the clock activation and deactivation.
Clock Enable When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
Power (+3.3V) Power for input buffers and logic circuit inside DRAM.
Ground
Ground for input buffers and logic circuit inside DRAM.
Power (+3.3V) Separated power from V
CC
, to improve DQ noise
for I/O Buffer immunity.
Ground
Separated ground from V
SS
, to improve DQ noise
for I/O Buffer immunity.
No Connection
No connection. (NC pin should be connected to GND
or floating)
-5-
Publication Release Date:Aug. 13, 2007
Revision A10
