W9825G6KH
4 M
4 BANKS
16 BITS SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION ......................................................................................................... 3
FEATURES ................................................................................................................................. 3
ORDER INFORMATION ............................................................................................................. 3
PIN CONFIGURATION ............................................................................................................... 4
PIN DESCRIPTION ..................................................................................................................... 5
BLOCK DIAGRAM ...................................................................................................................... 6
FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1
Power Up and Initialization ............................................................................................. 7
7.2
Programming Mode Register .......................................................................................... 7
7.3
Bank Activate Command ................................................................................................ 7
7.4
Read and Write Access Modes ...................................................................................... 7
7.5
Burst Read Command .................................................................................................... 8
7.6
Burst Write Command .................................................................................................... 8
7.7
Read Interrupted by a Read ........................................................................................... 8
7.8
Read Interrupted by a Write ............................................................................................ 8
7.9
Write Interrupted by a Write ............................................................................................ 8
7.10 Write Interrupted by a Read ............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 8
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode ...................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command .................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode........................................................................................................ 11
7.18 No Operation Command ............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode .................................................................................................... 11
OPERATION MODE ................................................................................................................. 12
ELECTRICAL CHARACTERISTICS ......................................................................................... 13
9.1
Absolute Maximum Ratings .......................................................................................... 13
9.2
Recommended DC Operating Conditions .................................................................... 13
9.3
Capacitance .................................................................................................................. 14
9.4
DC Characteristics ........................................................................................................ 14
9.5
AC Characteristics and Operating Condition ................................................................ 15
TIMING WAVEFORMS ............................................................................................................. 17
10.1 Command Input Timing ................................................................................................ 17
10.2 Read Timing.................................................................................................................. 18
10.3 Control Timing of Input/Output Data ............................................................................. 19
10.4 Mode Register Set Cycle .............................................................................................. 20
OPERATING TIMING EXAMPLE ............................................................................................. 21
Publication Release Date: Jun. 01, 2016
Revision: A03
-1-
8.
9.
10.
11.
W9825G6KH
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ...................................... 21
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ........... 22
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ...................................... 23
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ........... 24
11.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 25
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 27
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28
11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29
11.10 Auto-precharge Write (Burst Length = 4) .................................................................... 30
11.11 Auto Refresh Cycle ..................................................................................................... 31
11.12 Self Refresh Cycle ....................................................................................................... 32
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ............................ 33
11.14 Power Down Mode ...................................................................................................... 34
11.15 Auto-precharge Timing (Read Cycle) .......................................................................... 35
11.16 Auto-precharge Timing (Write Cycle) .......................................................................... 36
11.17 Timing Chart of Read to Write Cycle ........................................................................... 37
11.18 Timing Chart of Write to Read Cycle ........................................................................... 37
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) .......................................... 38
11.20 Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38
11.21 CKE/DQM Input Timing (Write Cycle) ......................................................................... 39
11.22 CKE/DQM Input Timing (Read Cycle) ......................................................................... 40
PACKAGE SPECIFICATION .................................................................................................... 41
REVISION HISTORY ................................................................................................................ 42
12.
13.
Publication Release Date: Jun. 01, 2016
Revision: A03
-2-
W9825G6KH
1. GENERAL DESCRIPTION
W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words
4 banks
16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per
second. To fully comply with the personal computer industrial standard, W9825G6KH is sorted into the
following speed grades: -5, -5I, -6, -6I, -6L, -75 and 75L. The -5/-5I grade parts are compliant to the
200MHz/CL3 specification (the -5I industrial grade which is guaranteed to support -40°C ≤ T
A
≤ 85°C).
The -6/-6I/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade
which is guaranteed to support -40°C ≤ T
A
≤ 85°C). The -75/75L is compliant to the 133MHz/CL3
specification. The -6L and 75L parts support self refresh current I
DD6
max. 1.5 mA.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G6KH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V ± 0.3V Power Supply
Up to 200 MHz Clock Frequency
4,194,304 Words
4 Banks
16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power Down Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
3. ORDER INFORMATION
PART NUMBER
SPEED GRADE
SELF REFRESH
CURRENT (MAX)
OPERATING
TEMPERATURE
W9825G6KH-5
W9825G6KH-5I
W9825G6KH-6
W9825G6KH-6I
W9825G6KH-6L
W9825G6KH-75
W9825G6KH75L
200MHz/CL3 or 133MHz/CL2
200MHz/CL3 or 133MHz/CL2
166MHz/CL3 or 133MHz/CL2
166MHz/CL3 or 133MHz/CL2
166MHz/CL3 or 133MHz/CL2
133MHz/CL3 or 100MHz/CL2
133MHz/CL3 or 100MHz/CL2
2 mA
2 mA
2 mA
2 mA
1.5 mA
2 mA
1.5 mA
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
0°C ~ 70°C
0°C ~ 70°C
Publication Release Date: Jun. 01, 2016
Revision: A03
-3-
W9825G6KH
4. PIN CONFIGURATION
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BS0
BS1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
Publication Release Date: Jun. 01, 2016
Revision: A03
-4-
W9825G6KH
5. PIN DESCRIPTION
PIN NUMBER
PIN NAME
FUNCTION
DESCRIPTION
2326, 22,
2936
A0A12
Address
A0A8Multiplexed pins for row and column address.
Row address: A0A12. Column address: A0A8.
A10 is sampled during a precharge command to
determine if all banks are to be precharged or bank
selected by BS0, BS1.
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
Multiplexed pins for data output and input.
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
20, 21
BS0, BS1
Bank Select
Data
Input/Output
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
DQ0DQ15
45, 47, 48, 50,
51, 53
19
CS
Chip Select
18
RAS
Command input. When sampled at the rising edge of
Row Address
the clock,
RAS
,
CAS
and
WE
define the
Strobe
operation to be executed.
Column
Address
Strobe
Referred to
RAS
17
16
CAS
WE
LDQM,
UDQM
CLK
CKE
V
DD
V
SS
V
DDQ
V
SSQ
NC
Write Enable Referred to
RAS
Input/Output
Mask
Clock Inputs
The output buffer is placed at Hi-Z(with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
System clock used to sample inputs on the rising edge
of clock.
15, 39
38
37
1, 14, 27
28, 41, 54
3, 9, 43, 49
6, 12, 46, 52
40
CKE controls the clock activation and deactivation.
Clock Enable When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
Power
Ground
Power for input buffers and logic circuit inside DRAM.
Ground for input buffers and logic circuit inside DRAM.
Power
Separated power from V
DD
, to improve DQ noise
for I/O Buffer immunity.
Ground
Separated ground from V
SS
, to improve DQ noise
for I/O Buffer immunity.
No Connection No connection.
Publication Release Date: Jun. 01, 2016
Revision: A03
-5-
