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W987D6HBGX7I

SYNCHRONOUS DRAM
同步动态随机存取存储器

器件类别:存储    存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Winbond(华邦电子)
包装说明
VFBGA-54
Reach Compliance Code
compli
访问模式
FOUR BANK PAGE BURST
最长访问时间
5.4 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
133 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PBGA-B54
长度
9 mm
内存密度
134217728 bi
内存集成电路类型
SYNCHRONOUS DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
54
字数
8388608 words
字数代码
8000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
8MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA54,9X9,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
1.8 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
1.025 mm
自我刷新
YES
连续突发长度
1,2,4,8,FP
最大待机电流
0.00001 A
最大压摆率
0.07 mA
最大供电电压 (Vsup)
1.95 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
8 mm
文档预览
W987D6HB / W987D2HB
128Mb Mobile LPSDR
TABLE OF CONTENTS
1. GENERAL DESCRIPTION ............................................................................................................. 4
2. FEATURES ..................................................................................................................................... 4
3. PIN CONFIGURATION ................................................................................................................... 5
3.1 Ball Assignment: LPSDR X 16 ............................................................................................................ 5
3.2 Ball Assignment: LPSDR X 32 ............................................................................................................ 5
4. PIN DESCRIPTION......................................................................................................................... 6
4.1 Signal Description ............................................................................................................................... 6
4.2 Addressing Table ................................................................................................................................ 6
5. BLOCK DIAGRAM ......................................................................................................................... 7
6. ELECTRICAL CHARACTERISTICS .............................................................................................. 8
6.1 Absolute Maximum Ratings................................................................................................................. 8
6.2 Operating Conditions .......................................................................................................................... 8
6.3 Capacitance ........................................................................................................................................ 8
6.4 DC Characteristics .............................................................................................................................. 9
6.5 Automatic Temperature Compensated Self Refresh Current Feature................................................ 11
6.6 AC Characteristics And AC Operating Conditions ............................................................................. 12
6.6.1 AC Characteristics....................................................................................................................................... 12
6.6.2 AC Test Condition ....................................................................................................................................... 13
6.6.3 AC Latency Characteristics ......................................................................................................................... 14
7. FUNCTION DESCRIPTION .......................................................................................................... 15
7.1 Command Function ........................................................................................................................... 15
7.1.1Table 1. Truth Table ..................................................................................................................................... 15
7.1.2 Functional Truth Table ................................................................................................................................ 16
7.1.3 Function Truth Table for CKE ..................................................................................................................... 19
7.1.4 Bank Activate Command ............................................................................................................................. 20
7.1.5 Bank Precharge Command ......................................................................................................................... 20
7.1.6 Precharge All Command ............................................................................................................................. 20
7.1.7 Write Command .......................................................................................................................................... 20
7.1.8 Write with Auto Precharge Command ......................................................................................................... 20
7.1.9 Read Command .......................................................................................................................................... 20
7.1.10 Read with Auto Precharge Command ...................................................................................................... 20
7.1.11 Extended Mode Register Set Command .................................................................................................. 20
7.1.12 Mode Register Set Command ................................................................................................................... 21
7.1.13 No-Operation Command ........................................................................................................................... 21
7.1.14 Burst Stop Command ................................................................................................................................ 21
7.1.15 Device Deselect Command ....................................................................................................................... 21
7.1.16 Auto Refresh Command ............................................................................................................................ 21
7.1.17 Self Refresh Entry Command ................................................................................................................... 21
7.1.18 Self Refresh Exit Command ...................................................................................................................... 21
7.1.19 Clock Suspend Mode Entry/Power Down Mode Entry Command ............................................................ 21
7.1.20 Clock Suspend Mode Exit/Power Down Mode Exit Command ................................................................. 21
- 1 -
Publication Release Date: Jun. 09, 2011
Revision A01-002
W987D6HB / W987D2HB
128Mb Mobile LPSDR
7.1.21 Data Write/Output Enable, Data Mask/Output Disable Command ........................................................... 22
8. OPERATION ................................................................................................................................. 22
8.1 Read Operation ................................................................................................................................. 22
8.2 Write Operation ................................................................................................................................. 22
8.3 Precharge ......................................................................................................................................... 23
8.3.1 Auto Precharge ........................................................................................................................................... 23
8.3.2 READ with auto precharge interrupted by a READ (with or without auto precharge) ................................ 23
8.3.3 READ with auto precharge interrupted by a WRITE (with or without auto precharge) ............................... 24
8.3.4 WRITE with auto precharge interrupted by a READ (with or without auto precharge) ............................... 25
8.3.5 WRITE with auto precharge interrupted by a WRITE (with or without auto precharge) ............................. 26
8.4 Burst Termination .............................................................................................................................. 27
8.5 Mode Register Operation .................................................................................................................. 28
8.5.1 Burst Length field (A2~A0) .......................................................................................................................... 28
8.5.2 Addressing Mode Select (A3) ..................................................................................................................... 28
8.5.3 Addressing Sequence for Sequential Mode ................................................................................................ 29
8.5.4 Addressing Sequence for Interleave Mode ................................................................................................. 29
8.5.5 Addressing Sequence Example (Burst Length = 8 and Input Address is 13) ............................................. 30
8.5.6 Read Cycle
CAS
Latency = 3................................................................................................................... 30
8.5.7
CAS
Latency field (A6~A4) ...................................................................................................................... 31
8.5.8 Mode Register Definition ............................................................................................................................. 31
8.6 Extended Mode Register Description ................................................................................................ 32
8.7 Simplified State Diagram ................................................................................................................... 33
9. CONTROL TIMING WAVEFORMS .............................................................................................. 34
9.1 Command Input Timing ..................................................................................................................... 34
9.2 Read Timing...................................................................................................................................... 35
9.3 Control Timing of Input Data (x16) .................................................................................................... 36
9.4 Control Timing of Output Data (x16) .................................................................................................. 37
9.5 Control Timing of Input Data (x32) .................................................................................................... 38
9.6 Control Timing of Output Data (x32) .................................................................................................. 39
9.7 Mode register Set (MRS) Cycle ......................................................................................................... 40
10. OPERATING TIMING EXAMPLE ............................................................................................... 42
10.1 Interleaved Bank Read (Burst Length = 4,
CAS
Latency = 3)........................................................ 42
10.2 Interleaved Bank Read (Burst Length = 4,
CAS
Latency = 3, Auto Precharge) ............................. 43
10.3 Interleaved Bank Read (Burst Length = 8,
CAS
Latency = 3) ........................................................ 44
10.4 Interleaved Bank Read (Burst Length = 8,
CAS
Latency = 3, Auto Precharge) ............................. 45
10.5 Interleaved Bank Write (Burst Length = 8) ....................................................................................... 46
10.6 Interleaved Bank Write (Burst Length = 8, Auto Precharge) ............................................................ 47
10.7 Page Mode Read (Burst Length = 4,
CAS
Latency = 3) ................................................................ 48
10.8 Page Mode Read / Write (Burst Length = 8,
CAS
Latency = 3) ..................................................... 49
10.9 Auto Precharge Read (Burst Length = 4,
CAS
Latency = 3) .......................................................... 50
10.10 Auto Precharge Write (Burst Length = 4) ....................................................................................... 51
- 2 -
Publication Release Date: Jun. 09, 2011
Revision A01-002
W987D6HB / W987D2HB
128Mb Mobile LPSDR
10.11 Auto Refresh Cycle ....................................................................................................................... 52
10.12 Self Refresh Cycle ........................................................................................................................ 53
10.13 Power Down Mode ........................................................................................................................ 54
10.14 Burst Read and Single Write (Burst Length = 4,
CAS
Latency = 3) ............................................. 55
10.15 Deep Power Down Mode Entry ..................................................................................................... 56
10.16 Deep Power Down Mode Exit ........................................................................................................ 57
10.17 Auto Precharge Timing (Read Cycle) ............................................................................................ 58
10.18 Auto Precharge Timing (Write Cycle) ............................................................................................ 59
10.19 Timing Chart of Read to Write Cycle ............................................................................................. 60
10.20 Timing Chart for Write to Read Cycle ............................................................................................ 60
10.21 Timing Chart for Burst Stop Cycle (Burst Stop Command) ............................................................ 61
10.22 Timing Chart for Burst Stop Cycle (Precharge Command) ............................................................ 61
10.23 CKE/DQM Input Timing (Write Cycle) ........................................................................................... 62
10.24 CKE/DQM Input Timing (Read Cycle) ........................................................................................... 63
11. PACKAGE DIMENSION ............................................................................................................. 64
11.1 : LPSDR X 16.................................................................................................................................. 64
11.2 : LPSDR X 32.................................................................................................................................. 65
12.ORDERING INFORMATION ....................................................................................................... 66
13. REVISION HISTORY .................................................................................................................. 67
- 3 -
Publication Release Date: Jun. 09, 2011
Revision A01-002
W987D6HB / W987D2HB
128Mb Mobile LPSDR
1. GENERAL DESCRIPTION
The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells
fabricated with Winbond high performance process technology.
It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which
use batteries. It is available in two organizations: 1,048,576 words × 4 banks × 32 bits or 2,097,152 words × 4 banks × 16
bits. The device operates in a fully synchronous mode, and the output data are synchronized to positive edges of the
system clock and is capable of delivering data at clock rate up to 166MHz. The device supports special low power functions
such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR).
The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile game consoles and other
handheld applications where large memory density and low power consumption are required. The device operates from
1.8V power supply, and supports the 1.8V LVCMOS bus interface.
2. FEATURES
Power supply V
DD
= 1.7V~1.95V
V
DDQ
= 1.7V~1.95V
Frequency : 166MHz (-6) ,133MHz(-75)
Programmable Partial Array Self Refresh
Power Down Mode
Deep Power Down Mode (DPD)
Programmable output buffer driver strength
Automatic Temperature Compensated Self Refresh
CAS
Latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Refresh: 4K refresh cycle / 64ms
Interface: LVCMOS
Support package :
54 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended (-25°C ~ +85°C)
Industrial (-40°C ~ +85°C)
- 4 -
Publication Release Date: Jun. 09, 2011
Revision A01-002
W987D6HB / W987D2HB
128Mb Mobile LPSDR
3. PIN CONFIGURATION
3.1 Ball Assignment: LPSDR X 16
54Ball FBGA
1
A
B
C
D
E
F
G
H
J
VSS
DQ14
DQ12
DQ10
DQ8
UDQM
NC
A8
VSS
2
DQ15
DQ13
DQ11
DQ9
NC
CLK
A11
A7
A5
3
VSSQ
VDDQ
VSSQ
VDDQ
VSS
CKE
A9
A6
A4
(Top View)
4 5 6
7
VDDQ
VSSQ
VDDQ
VSSQ
VDD
8
DQ0
DQ2
DQ4
DQ6
LDQM
9
VDD
DQ1
DQ3
DQ5
DQ7
CAS
BA0
A0
A3
RAS
BA1
A1
A2
WE
CS
A10
VDD
3.2 Ball Assignment: LPSDR X 32
90Ball FBGA
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
DQ26
DQ28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
DQM1
VDDQ
VSSQ
VSSQ
DQ11
DQ13
2
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
3
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
(Top View)
4 5 6
7
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BA0
8
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
9
DQ21
DQ19
VDDQ
VDDQ
VSSQ
VDD
A1
A11
CS
RAS
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
CAS
VDD
DQ6
DQ1
VDDQ
VDD
WE
DQ7
DQ5
DQ3
VSSQ
DQ0
- 5 -
Publication Release Date: Jun. 09, 2011
Revision A01-002
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