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WE128K32N-200G2TQA

128KX32 EEPROM 5V MODULE, 125ns, CQFP68, 22.40 X 22.40 MM, 4.57 MM HEIGHT, CERAMIC, QFP-68

器件类别:存储    存储   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
厂商名称
Microsemi
零件包装代码
QFP
包装说明
QFP,
针数
68
Reach Compliance Code
unknown
最长访问时间
125 ns
其他特性
USER CONFIGURABLE AS 512K X 8
备用内存宽度
16
JESD-30 代码
S-CQFP-G68
长度
22.36 mm
内存密度
4194304 bit
内存集成电路类型
EEPROM MODULE
内存宽度
32
功能数量
1
端子数量
68
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
128KX32
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
QFP
封装形状
SQUARE
封装形式
FLATPACK
并行/串行
PARALLEL
编程电压
5 V
认证状态
Not Qualified
座面最大高度
4.57 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子形式
GULL WING
端子节距
1.27 mm
端子位置
QUAD
宽度
22.36 mm
最长写入周期时间 (tWC)
10 ms
文档预览
White Electronic Designs
128Kx32 EEPROM MODULE, SMD 5962-94585
FEATURES
Access Times of 125, 140, 150, 200, 250, 300ns
Packaging:
• 66-pin, PGA Type, 27.3mm (1.075") square,
Hermetic Ceramic HIP (Package 400)
• 68 lead, 22.4mm sq. CQFP (G2T), 4.57mm
(0.180") high, (Package 509)
Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8
Write Endurance 10,000 Cycles
Data Retention Ten Years Minimum (at +25°C)
Commercial, Industrial and Military Temperature
Ranges
Low Power CMOS
Automatic Page Write Operation
WE128K32-XXX
Page Write Cycle Time: 10ms Max
Data Polling for End of Write Detection
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
5 Volt Power Supply
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WE128K32-XG2TX - 8 grams typical
WE128K32-XH1X - 13 grams typical
*This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION FOR
WE128K32N-XH1X
Top View
1
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
NC
I/O
0
I/O
1
I/O
2
11
22
12
WE
2
#
CS
2
#
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
#
NC
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
NC
WE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
#
WE
4
#
I/O
27
A
3
A
4
A
5
WE
3
#
CS
3
#
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
128K x 8
128K x 8
128K x 8
128K x 8
W E
1
# CS
1
#
OE#
A
0-16
Pin Description
56
I/O0-31
A0-16
WE1-4#
CS1-4#
OE#
V
CC
GND
NC
Data Input/Output
Address Inputs
Write Enable
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
W E
2
# CS
2
#
W E
3
# CS
3
#
W E
4
# CS
4
#
I/O
21
I/O
20
66
8
8
8
8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2008
Rev. 12
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WE128K32-XXX
FIGURE 3 – PIN CONFIGURATION FOR WE128K32-XG2TX
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O0-31
A0-16
WE1-4#
CS1-4#
OE#
V
CC
GND
NC
Data Input/Output
Address Inputs
Write Enable
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
CS
1
#
CS
2
#
NC
WE
2
#
WE
3
#
WE
4
#
OE#
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
NC
NC
NC
Block Diagram
W E
1
# CS
1
#
OE#
A
0-16
128K x 8
128K x 8
128K x 8
128K x 8
W E
2
# CS
2
#
W E
3
# CS
3
#
W E
4
# CS
4
#
8
8
8
8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
The WEDC 68 lead CQFP
lls the same
t and function
as the JEDEC 68 lead CQFJ
or 68 PLCC. But it has the
TCE and lead inspection
advantage of the CQFP
form.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2008
Rev. 12
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Voltage on OE# and A9
Symbol
T
A
T
STG
V
G
-55 to +125
-65 to +150
-0.6 to + 6.25
-0.6 to +13.5
Unit
°C
°C
V
V
CS#
H
L
L
X
X
X
OE#
X
L
H
H
X
L
WE#
X
H
L
X
H
X
WE128K32-XXX
TRUTH TABLE
Mode
Standby
Read
Write
Out Disable
Write
Inhibit
Data I/O
High Z
Data Out
Data In
High Z/Data Out
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
CAPACITANCE
T
A
= +25°C
Parameter
OE# capacitance
WE1-4# capacitance
HIP (PGA)
CQFP G2T
CS1-4# capacitance
Data I/O capacitance
Address input capacitance
Symbol
C
OE
C
WE
Conditions
Max Unit
V
IN
= 0 V, f = 1.0 MHz 50 pF
pF
V
IN
= 0 V, f = 1.0 MHz
20
20
V
IN
= 0 V, f = 1.0 MHz 20 pF
V
I/O
= 0 V, f = 1.0 MHz 20 pF
V
IN
= 0 V, f = 1.0 MHz 50 pF
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.0
-0.5
-55
-40
Max
5.5
V
CC
+ 0.3
+0.8
+125
+85
Unit
V
V
V
°C
°C
C
CS
C
I/O
C
AD
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
T
A
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current (x32)
Standby Current
Output Low Voltage
Output High Voltage
Symbol
I
LI
I
LOx32
I
CCx32
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz
CS# = V
IH
, OE# = V
IH
, f = 5MHz
I
OL
= 2.1mA, V
CC
= 4.5V
I
OH
= -400μA, V
CC
= 4.5V
Min
Max
10
10
250
2.5
0.45
Unit
μA
μA
mA
mA
V
V
2.4
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
FIGURE 3
AC Test Circuit
Current Source
AC TEST CONDITIONS
IOL
D.U.T
Ceff = 50 pf
Vz ~ 1.5V
~
Bipolar Supply
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Current Source
IOH
Notes: V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2008
Rev. 12
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WRITE
A write cycle is initiated when OE# is high and a low pulse
is on WE# or CS# with CS# or WE# low. The address
is latched on the falling edge of CS# or WE# whichever
occurs last. The data is latched by the rising edge of CS#
or WE#, whichever occurs
rst. A byte write operation will
automatically continue to completion.
WE128K32-XXX
AC WRITE CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
T
A
+125°C
Write Cycle Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Write Pulse Width (WE# or CS#)
Chip Select Set-up Time
Address Hold Time
Data Hold Time
Chip Select Hold Time
Data Set-up Time
Output Enable Set-up Time
Output Enable Hold Time
Write Pulse Width High
Symbol
t
WC
t
AS
t
WP
t
CS
t
AH
t
DH
t
CSH
t
DS
t
OES
t
OEH
t
WPH
0
100
0
100
10
0
50
0
0
50
Min
Max
10
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
write cycle timing
Figures 5 and 6 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing
the CS# line low. Write enable consists of setting the WE#
line low. The write cycle begins when the last of either CS#
or WE# goes low.
The WE# line transition from high to low also initiates
an internal 150
μsec
delay timer to permit page mode
operation. Each subsequent WE# transition from high to
low that occurs before the completion of the 150
μsec
time
out will restart the timer from zero. The operation of the
timer is the same as a retriggerable one-shot.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2008
Rev. 12
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WE128K32-XXX
FIGURE 5 – WRITE WAVEFORMS WE# CONTROLLED
t
WC
OE#
t
OES
ADDRESS
CS
1-4
#
WE
1-4
#
t
WP
t
DS
DATA IN
t
WPH
t
DH
t
AS
t
CS
t
AH
t
CSH
t
OEH
FIGURE 6 – WRITE WAVEFORMS CS# CONTROLLED
t
WC
OE#
t
OES
ADDRESS
WE
1 - 4#
CS
1 - 4#
t
WP
t
DS
DATA IN
t
WPH
t
DH
t
AS
t
CS
t
AH
t
CSH
t
OEH
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2008
Rev. 12
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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