WFF8N65L
Product Description
Silicon N-Channel MOSFET
Features
½
½
½
½
½
8.0A,650V,R
DS(on)
(Max1.4Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 14.5nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
D
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
V
DSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Total Power Dissipation(@Tc=25℃)
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.38
-55~150
300
W/℃
℃
℃
(Note2)
(Note1)
5.1
32
±30
398
48
A
A
V
mJ
W
Parameter
Value
650
8
Units
V
A
Thermal Characteristics
Value
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Min
-
-
Typ
-
-
Max
2.6
120
Units
℃/W
℃/W
WT-F085-Rev.A0 Oct. 2014
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Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1014
WFF8N65L
Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Symbol
I
GSS
V
(BR)GSS
Test Condition
V
GS
=±30V,V
DS
=0V
I
G
=±10 µA,V
DS
=0V
V
DS
=650V,V
GS
=0V
Min
-
±30
-
-
650
2
-
-
-
-
-
-
-
Type
-
-
-
-
-
-
1.2
902
3.2
99
51.5
28.5
29.0
39.0
Max
±100
-
1.0
100
-
4
1.4
-
-
-
-
-
Unit
nA
V
µA
µA
V
V
Ω
Drain Cut -off current
I
DSS
V
DS
=500V,Tc=125℃
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Turn-on delay time
Switching time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
V
(BR)DSS
V
GS(th)
R
DS(ON)
C
iss
C
rss
C
oss
tr
Td(on)
tf
Td(off)
I
D
=250 µA,V
GS
=0V
V
DS
=V
GS
,I
D
=250 µA
V
GS
=10V,I
D
=4.0A
V
DS
=25V,
V
GS=
0V,
f=1MHz
V
DD
=325V,
I
D
=8.0A
R
G
=25Ω
(Note3,4)
pF
ns
-
-
-
V
DD
=520V,
Qg
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qgs
Qgd
V
GS
=10V,
I
D
=8.0A
(Note3,4)
-
14.5
-
nC
-
-
5.0
4.7
-
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
trr
Qrr
Test Condition
-
-
I
DR
=8.0A,V
GS
=0V
I
DR
=8.0A,V
GS
=0V,
dI
DR
/dt =100 A /µs
Min
-
-
-
-
-
Type
-
-
-
536.5
3.66
Max
8.0
32.0
1.4
-
-
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=30mH I
AS
=4.8A,V
DD
=120V,R
G
=25Ω,Starting T
J
=25℃
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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2/8
WFF8N65L
Product Description
Silicon N-Channel MOSFET
100
V
G S
To p
4 .5 V
5 .0 V
5 .5 V
6 .0 V
7 .0 V
8 .0 V
100
1 0
I
D
[A ]
I
D
[A ]
10V
15V
1 0
2 5 °C
1 5 0 °C
-5 5 °C
1
Notes:
1.250µ s pulse test
2.Tc = 25° C
1
No te s:
1 .2 5 0 µs p u lse te st
2 .V
D S
=5 0 V
100
0 .1
0
1
2
3
4
5
6
7
8
9
1 0
0 .1
0 .1
1
1 0
V
D S
[V]
V
G S
[V]
Fig.1 On Region Characteristics
1 .6
100
Fig.2 Transfer Characteristics
1 .5
V
GS
=10V
1 0
V
G S
=20V
R
DS(ON)
[
Ω
]
1 .4
1 .3
I
DR
[A]
1 5 0 °C
-5 5 °C
1
2 5 °C
Notes:
1.250µs pulse test
2.V
G S
=0V
1 .2
1 .1
Note:T
J
=25°C
1 .0
0
2
4
6
8
1 0
0
.
1
0
0
.
2
0 .4
0 .6
0 .8
1 .0
1 .2
1 .4
I
D
[A]
V
S D
[V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
2000
1800
1600
1400
8
C is s
C o ss
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
C rss=C gd
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
1 2
520V
1 0
320V
130V
1000
800
600
400
C rs s
Note:
1.V
G S
=0V
2.f=1MHz
V
GS
(V)
pF
1200
6
4
2
200
0
0 .1
1 0
100
0
0
4
8
1 2
1 6
1
V
D S
[V]
Qg(nC)
Fig.5 Capacitance Characteristics
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Fig.6 Gate Charge Characteristics
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3/8
WFF8N65L
Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
2 .5
1 .1
B
VDSS
1 .0
R
DS( ON)
Note:
1.V
G S
=0V
2.I
D
=250uA
2 .0
1 .5
1 .0
0 .9
0 .5
Note:
1.V
G S
=10V
2.I
D
=4.0A
-1 0 0
-5 0
0
5 0
100
150
200
0 .8
-1 0 0
0 .0
-5 0
0
5 0
100
150
200
T
J
(° C )
T
J
(° C )
Fig.7 Breakdown Voltage Variation
vs. Temperature
1 0
2
Fig.8 On-Resistance Variation
vs. Temperature
8
7
6
5
4
3
2
100µs
1 0
1
1m s
10m s
I
D
[A]
1 0
0
D C
O p e ra ti o n i n T h i s A re a
i s L i m i te d b y R
DS(ON)
1 0
- 1
No te s:
1 . Tc= 2 5 ° C
2 .T
J
=150°C
3.Single pulse
0
I
D
[A]
2
3
1
0
2 5
5 0
7 5
100
125
150
1 0
- 2
1 0
1 0
1
1 0
1 0
V
D S
[V]
Tc(° C )
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs Case temperature
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4/8
WFF8N65L
Product Description
Silicon N-Channel MOSFET
5 0 KΩ
12V
200nF
300nF
Same type
as D U T
V
G
S
Qg
10V
V
D
S
V
G
S
Qg s
Qg d
DUT
3m A
C h a rg e
Fig.11 Gate Test circuit & Waveform
V
D
R
G
V
G
S
R
L
S
V
D
V
D
D
S
9 0 %
10V
DUT
V
G
1 0 %
S
t
d (o n )
t
o
n
t
r
t
d (o ff)
t
o f f
t
f
Fig.12 Resistive Switching Test Circuit & Waveform
L
V
D
S
E
A
B V
D S S
I
A S
V
D
D
L I
A
S
=
2
1
2
S
B V
D S S
B V
D S S
-
V
D
D
I
D
R
G
I
D
(
t
)
V
D
V
D S
t
)
(
D
10V
t
p
DUT
t
p
Tim e
Fig.13 Unclamped Inductive Switching Test Circuit & Waveform
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5/8
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