WMF128K8-XXX5
HI-RELIABILITY PRODUCT
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
FEATURES
s
Access Times of 50*, 60, 70, 90, 120, 150ns
s
Packaging
• 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
• 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
• 32 lead, Flatpack (Package 220)
• 32 lead, Formed Flatpack (Package 221)
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
s
100,000 Erase/Program Cycles Minimum
s
Sector Erase Architecture
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
s
Organized as 128Kx8
s
Commercial, Industrial and Military Temperature Ranges
s
5 Volt Programming. 5V
±
10% Supply.
s
Low Power CMOS
s
Embedded Erase and Program Algorithms
s
TTL Compatible Inputs and CMOS Outputs
s
Page Program Operation and Internal Program Control Time.
Note: For programming information refer to Flash Programming 1M5
Application Note.
* The access time of 50ns is available in Industrial and Commercial
temperature ranges only.
PIN CONFIGURATION FOR WMF128K8-XXX5
32 DIP
32 CSOJ
32 FLATPACK
PIN CONFIGURATION FOR WMF128K8-XCLX5
32 CLCC
TOP VIEW
A12
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
TOP VIEW
A15
A16
V
CC
WE
NC
V
CC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O1
I/O2
I/O3
I/O4
I/O5
PIN DESCRIPTION
A
0
-
16
I/O
0-7
CS
OE
WE
V
CC
V
SS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
April 2001 Rev. 5
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
I/O6
V
SS
NC
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles) Mil Temp
A
9
Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
10
10,000 min.
-2.0 to +14.0
Unit
°C
V
V
°C
°C
years
cycles
V
Parameter
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
V
CC
+ 0.3
+0.8
+125
+85
12.5
Unit
V
V
V
°C
°C
V
CAPACITANCE
(T
A
= +25°C)
Symbol
C
AD
C
OE
C
WE
C
CS
C
I/O
Conditions
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
Max Unit
15
15
15
15
15
pF
pF
pF
pF
pF
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program
or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Output High Voltage
Low V
CC
Lock Out Voltage
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
V
OL
V
OH1
V
OH2
V
LKO
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IL
, OE = V
IH
CS = V
IL
, OE = V
IH
V
CC
= 5.5, CS = V
IH
, f = 5MHz
I
OL
= 8.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
I
OH
= -100
µA,
V
CC
= 4.5
0.85 x V
CC
V
CC
- 0.4
3.2
Min
Max
10
10
35
50
1.6
0.45
Unit
µA
µA
mA
mA
mA
V
V
V
V
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
AC TEST CIRCUIT
I
OL
Current Source
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
(Bipolar Supply)
I
OH
Current Source
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Symbol
Min
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Hold Time
Write Enable Pulse Width High
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHEH
t
WHWL
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
CH
t
WPH
50
0
25
0
25
0
40
0
20
14
2.2
0
t
VCS
50
12.5
t
OES
t
OEH
0
10
0
10
60
-50
Max
Min
60
0
30
0
30
0
45
0
20
14
2.2
0
50
12.5
0
10
60
-60
Max
-70
Min
70
0
35
0
30
0
45
0
20
14
2.2
0
50
12.5
0
10
60
Max
-90
Min
90
0
45
0
45
0
45
0
20
14
2.2
0
50
12.5
0
10
60
Max
-120
Min
120
0
50
0
50
0
50
0
20
14
2.2
0
50
12.5
0
10
60
Max
-150
Min
150
0
50
0
50
0
50
0
20
14
2.2
0
50
12.5
60
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
µs
sec
ns
ns
Unit
Duration of Byte Programming Operation (min) t
WHWH1
Sector Erase Time
Read Recovery Time Before Write
V
CC
Setup Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (1)
1. For Toggle and Data Polling.
t
WHWH2
t
GHWL
AC CHARACTERISTICS – READ ONLY OPERATIONS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
OE to Output Valid
Chip Select to Output High Z (1)
OE High to Output High Z (1)
Output Hold from Address, CS or OE Change,
whichever is first
1. Guaranteed by design, not tested.
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
50
50
50
25
20
20
0
-50
Min
Max
60
60
60
30
20
20
0
-60
Min
Max
70
70
70
35
20
20
0
-70
Min
Max
90
90
90
40
25
25
0
-90
Min
Max
-120
Min
120
120
120
50
30
30
0
Max
-150
Min
150
150
150
55
35
35
Max
ns
ns
ns
ns
ns
ns
ns
Unit
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle Time
WE Setup Time
CS Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
WE Hold from WE High
CS Pulse Width High
Duration of Programming Operation
Duration of Erase Operation
Read Recovery before Write
Chip Programming Time
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHWH
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
WH
t
CPH
50
0
25
0
25
0
40
0
20
14
2.2
0
12.5
60
-50
Min
Max
60
0
30
0
30
0
45
0
20
14
2.2
0
12.5
60
-60
Min
Max
70
0
35
0
30
0
45
0
20
14
2.2
0
12.5
60
-70
Min
Max
Min
90
0
45
0
45
0
45
0
20
14
2.2
0
12.5
60
-90
Max
-120
Min
120
0
50
0
50
0
50
0
20
14
2.2
0
12.5
60
Max
-150
Min
150
0
50
0
50
0
50
0
20
14
2.2
0
12.5
60
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
sec
Unit
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WMF128K8-XXX5
AC WAVEFORMS FOR READ OPERATIONS
t
DF
t
OH
Addresses Stable
t
RC
t
OE
t
ACC
t
CE
WE
OE
Addresses
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Outputs
CS
High Z
Output Valid
High Z
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