WMF512K8-XXX5
HI-RELIABILITY PRODUCT
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
FEATURES
s
Access Times of 70, 90, 120, 150ns
s
Packaging
• 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
• 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
• 32 lead Flatpack (Package 220)
s
1,000,000 Erase/Program Cycles Minimum
s
Sector Erase Architecture
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
s
Organized as 512Kx8
s
Commercial, Industrial and Military Temperature Ranges
s
5 Volt Programming. 5V
±
10% Supply.
s
Low Power CMOS
s
Embedded Erase and Program Algorithms
s
TTL Compatible Inputs and CMOS Outputs
s
Page Program Operation and Internal Program Control Time.
Note: For programming information refer to Flash Programming 4M5
Application Note.
PIN CONFIGURATION FOR WMF512K8-XXX5
32 DIP
32 CSOJ
32 Flatpack
PIN CONFIGURATION FOR WMF512K8-XCLX5
32 CLCC
TOP VIEW
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
TOP VIEW
A12
A15
A16
A18
V
CC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
I/O1
I/O2
I/O3
I/O4
I/O5
PIN DESCRIPTION
A
0
-
18
I/O
0-7
CS
OE
WE
V
CC
V
SS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
May 1999 Rev. 3
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
I/O6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
A17
V
CC
WE
WMF512K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature
Supply Voltage (V
CC
) (1)
Signal Voltage Range(any pin except A
9
) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance - erase/program cycles (Mil Temp)
A
9
Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
20
100,000 min
-2.0 to +14.0
Unit
°C
V
V
°C
°C
years
cycles
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
Vcc + 0.5
+0.8
+125
+85
12.5
Unit
V
V
V
°C
°C
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input
voltage on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
CAPACITANCE
(T
A
= +25°C)
Parameter
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
Symbol
C
AD
C
OE
C
WE
C
CS
C
I/O
Conditions
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
Max Unit
15
15
15
15
15
pF
pF
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program
or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LOx32
I
CC1
I
CC2
I
CC4
V
OL
V
OH1
V
LKO
Conditions
Min
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz
CS = V
IL
, OE = V
IH
60
V
CC
= 5.5, CS = V
IH
, f = 5MHz
I
OL
= 8.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
0.85 x V
CC
3.2
4.2
1.6
0.45
mA
mA
V
V
V
Max
10
10
50
Unit
µA
µA
mA
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
Symbol
Min
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
0
11
64
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
70
0
45
0
45
0
45
20
300
15
0
11
64
-70
Max
Min
90
0
45
0
45
0
45
20
300
15
0
11
64
-90
Max
-120
Min
120
0
50
0
50
0
50
20
300
15
0
11
64
Max
150
0
50
0
50
0
50
20
300
15
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
sec
sec
-150
Unit
AC TEST CIRCUIT
I
OL
Current Source
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
Output Timing Reference Level
(Bipolar Supply)
I
OH
Current Source
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(V
CC
= 5.0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
V
CC
Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
4. For Toggle and Data Polling.
t
OES
t
OEH
0
10
64
Symbol
Min
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
tvcs
0
50
11
0
10
64
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
70
0
45
0
45
0
45
20
300
15
0
50
11
0
10
64
-70
Max
Min
90
0
45
0
45
0
45
20
300
15
0
50
11
0
10
64
-90
Max
-120
Min
120
0
50
0
50
0
50
20
300
15
0
50
11
Max
Min
0
50
0
50
0
50
20
300
15
-150
Max
Unit
WF512K32-XXX5
150
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ms
µs
sec
ns
ns
sec
AC CHARACTERISTICS – READ ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Address, CS or OE Change,
whichever is First
NOTES:
1. Guaranteed by design, but not tested
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
Symbol
Min
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
70
70
70
35
20
20
0
-70
Max
Min
90
90
90
35
20
20
0
-90
Max
-120
Min
120
120
120
50
30
30
0
Max
Min
150
150
150
55
35
35
-150
Max
ns
ns
ns
ns
ns
ns
ns
Unit
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WMF512K8-XXX5
AC WAVEFORMS FOR READ OPERATIONS
t
DF
t
OH
Addresses Stable
t
RC
t
OE
t
ACC
t
CE
WE
OE
Addresses
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
Outputs
CS
High Z
Output Valid
High Z
嵌入式系统
