WMS512K8-XXX
512Kx8, MONOLITHIC SRAM, SMD 5962-95613
FEATURES
Access Times 70, 85, 100, 120ns
MIL-STD-883 Compliant Devices Available
Evolutionary, Corner Power/Ground Pinout JEDEC Approved
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
Commercial, Industrial and Military Temperature Ranges
5V Power Supply
Low Power CMOS
Low Power Data Retention
TTL Compatible Inputs and Outputs
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
TOP VIEW
A
0-18
I/O
0-7
CS#
OE#
WE#
V
CC
GND
PIN DESCRIPTION
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011
Rev. 5
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
VG
TJ
V
CC
-0.5
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS#
H
L
L
L
OE#
X
L
X
H
TRUTH TABLE
WE#
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
CAPACITANCE
(T
A
= +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
Parameter
Input capacitance
Output capacitance
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max
12
12
Unit
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Symbol
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 2.1mA, V
CC
= 4.5
I
OH
= -1.0mA, V
CC
= 4.5
Units
Min
10
10
50
1
0.4
2.4
Max
μA
μA
mA
mA
V
V
DATA RETENTION CHARACTERISTICS
(T
A
= -55°C to +125°C)
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
VDR
I
CC
DR1
Conditions
CS#
≥
V
CC
-0.2V
V
CC
= 3V
Min
2.0
Military
Typ
100
Max
5.5
400
Units
V
μA
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
Parameter
Data Retention Supply Voltage
Low Power Data Retention (L)
Symbol
VDR
I
CC
DR1
Conditions
CS#
≥
V
CC
-0.2V
V
CC
= 2V
Min
2.0
Max
5.5
185
Units
V
μA
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011
Rev. 5
© 2011 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
Min
70
5
-70
Max
70
5
70
35
10
5
25
25
10
5
Min
85
-85
Max
85
5
85
40
10
5
25
25
Min
100
-100
Max
100
5
100
50
10
5
35
35
Min
120
-120
Max
120
120
60
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
35
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold from Write Time
1. This parameter is guaranteed by design but not tested.
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
-70
Min
70
60
60
30
50
0
5
5
0
Max
-85
Min
85
75
75
30
50
0
5
5
0
Max
-100
Min
100
80
80
40
60
0
5
5
0
Max
-120
Min
120
100
100
40
60
0
5
5
0
Units
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25
25
35
35
AC TEST CIRCUIT
Input Pulse Levels
Input Rise and Fall
I
OL
Current Source
AC TEST CONDITIONS
Parameter
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Input and Output Reference Level
Output Timing Reference Level
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
VZ is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
D.U.T.
C
eff
= 50 pf
V
Z
»
1.5V
(Bipolar Supply)
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011
Rev. 5
© 2011 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
TIMING WAVEFORM – READ CYCLE
t
RC
ADDRESS
t
RC
ADDRESS
CS#
t
AA
t
CHZ
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
ACS
t
CLZ
OE#
READ CYCLE 1 (CS# = OE# = V
IL
, WE# = V
IH
)
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 2 (WE# = V
IH
)
WRITE CYCLE – WE# CONTROLLED
t
WC
ADDRESS
t
AW
CS#
t
CW
t
AH
t
AS
WE#
t
WP
t
OW
t
WHZ
t
DW
t
DH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
t
WC
ADDRESS
t
AS
CS#
t
AW
t
CW
t
WP
t
AH
WE#
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011
Rev. 5
© 2011 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
0.2 (0.008)
± 0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
11.23 (0.442)
± 0.30 (0.012)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
0.99 (0.039)
± 0.51 (0.020)
0.25 (0.010)
± 0.05 (0.002)
15.25 (0.600)
± 0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011
Rev. 5
© 2011 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
