WESTCODE
SEMICONDUCTORS
Thyristor Modules
Thyristor/Diode Modules
I
TRMS
= 2 x 500 A
I
TAVM
= 2 x 320 A
V
RRM
= 800 - 2200 V
3
V
RSM
V
DSM
V
900
1300
1500
1700
1900
2100
2300
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
V
RRM
V
DRM
V
800
1200
1400
1600
1800
2000
2200
Type
1
2
7
6
5
4
WPT 310-08
WPT 310-12
WPT 310-14
WPT 310-16
WPT 310-18
WPH 310-08
WPH 310-12
WPH 310-14
WPH 310-16
WPH 310-18
WPH 310-20
WPH 310-22
3
67 1
54 2
Test Conditions
T
VJ
= T
VJM
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
500
320
9200
9800
8000
8600
420 000
400 000
320 000
306 000
100
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
WPT 310
3
1
5 4 2
WPH 310
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
q
q
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 960 A
f =50 Hz, t
P
=200
µs
V
D
= 2/3 V
DRM
I
G
= 1 A
non repetitive, I
T
= 320 A
di
G
/dt = 1 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30
µs
t
P
= 500
µs
500
1000
120
60
20
10
-40...+140
140
-40...+125
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
q
q
q
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
Keyed gate/cathode twin pins
Applications
q
q
q
q
q
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
Advantages
q
q
q
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320
g
q
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Symbol
I
RRM
I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 140°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
70
40
1.32
0.8
0.82
2
3
150
200
0.25
10
200
150
2
typ. 200
760
275
0.112
0.056
0.152
0.076
12.7
9.6
50
mA
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Fig. 1 Gate trigger characteristics
T
VJ
= 25°C; t
P
= 30
µs;
V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 1 A; di
G
/dt = 1 A/µs
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200
µs;
-di/dt = 10 A/µs
V
R
= 100 V; dv/dt = 50 V/µs; V
D
= 2/3 V
DRM
T
VJ
= 125°C; I
T
, I
F
= 400 A, -di/dt = 50 A/µs
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
other values
see Fig. 8/9
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type
U9911
UL 758, style 1385,
CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
WPT 310
WPH 310
Threaded spacer for higher Anode/
Cathode construction:
Type
U9912,
material brass
20
12
14
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x WPT 310 or
3 x WPH 310
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS output
current and ambient temperature
Circuit
W3
3 x WPT 310 or
3 x WPH 310
0.15
K/W
Fig. 8 Transient thermal impedance junction
to case (per thyristor or diode)
30°
DC
Z
thJC
0.10
R
thJC
for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
R
thJC
(K/W)
0.112
0.113
0.114
0.115
0.115
0.05
Constants for Z
thJC
calculation:
i
0
0.00
10
-3
R
thi
(K/W)
0.003
0.0143
0.0947
t
i
(s)
0.099
0.168
0.456
10
-2
10
-1
10
0
10
1
s
10
2
t
1
2
3
0.20
K/W
Fig. 9 Transient thermal impedance junction
to heatsink (per thyristor or diode)
R
thJK
for various conduction angles d:
30°
DC
Z
thJK
0.15
d
DC
180°C
120°C
60°C
30°C
R
thJK
(K/W)
0.152
0.154
0.154
0.155
0.155
0.10
Constants for Z
thJK
calculation:
0.05
i
1
2
3
4
R
thi
(K/W)
0.003
0.0143
0.0947
0.04
t
i
(s)
0.099
0.168
0.456
1.36
0
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
t
WESTCODE
SEMICONDUCTORS
WWW: http//www.westcode.com
UK : Westcode Semiconductors Ltd
P.O. Box 97, Chippenham, Wiltshire, England SN15 1JL
Tel : +44 (0)1249 444524 Fax : +44 (0)1249 659448
E-Mail : WSL.sales@westcode.com
USA : Westcode Semiconductors Inc
3270 Cherry Avenue Long Beach, California 90807
Tel : 562 595 6971 Fax : 562 595 8182
© Westcode Semiconductors Ltd
In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice.
