WS1113
4 x 4 Power Amplifier Module for
CDMA/AMPS (824 – 849 MHz)
Data Sheet
Description
The WS1113, a CDMA (Code Division Multiple Access)
Power Amplifier (PA), is a fully matched 10-pin
surface mount module developed for Cellular and
AMPS applications. This power amplifier module
operates in the 824 – 849 MHz bandwidth. The
WS1113 meets stringent CDMA linearity require-
ments up to 28 dBm output power.
A low current (Vcont) pin is provided for high effi-
ciency improvement of the low output power range.
The WS1113 features CoolPAM circuit technology
offering state-of-the-art reliability, temperature
stability and ruggedness.
WS1113 is self contained, incorporating 50 ohm input
and output matching networks.
Features
• Good linearity
• High efficiency
• 10-pin surface mounting package (4 mm x 4 mm x
1.4 mm)
• Low power-state control
• Low quiescent current
• Internal 50Ω matching networks for both RF input and
output
• CDMA 95A/B, CDMA2000-1X/EVDO
Applications
• Digital Cellular (CDMA)
• Analog Cellular (AMPS)
Functional Block Diagram
Vref(1)
Vcont(2)
Bias Circuit & Control Logic
RF Input (4)
Input
Match
MMIC
DA
Inter
Stage
Match
PA
Output
Match
RF Output (8)
MODULE
Vcc1(5)
Vcc2(6)
Table 1. Absolute Maximum Ratings
[1]
Parameter
RF Input Power
DC Supply Voltage
DC Reference Voltage
Storage Temperature
Symbol
P
in
V
cc
V
ref
T
stg
Min.
–
–
–
-55
Nominal
–
3.4
2.85
–
Max.
10.0
5.0
3.3
+125
Unit
dBm
V
V
°C
Table 2. Recommended Operating Conditions
Parameter
DC Supply Voltage
DC Reference Voltage
Mode Control Voltage
– High Power Mode
– Low Power Mode
Operating Frequency
Ambient Temperature
Symbol
V
cc
V
ref
V
cont
V
cont
F
o
T
a
Min.
3.2
2.75
–
–
824
-30
Nominal
3.4
2.85
0
2.85
Max.
4.2
2.95
–
–
849
Unit
V
V
V
V
MHz
°C
25
85
Table 3. Power Range Truth Table
Power Mode
High Power Mode
[3]
Low Power Mode
[3]
Shut Down Mode
[4]
Symbol
PR2
PR1
–
Vref
2.85
2.85
0.00
Vcont
[2]
Low
High
–
Range
~ 28 dBm
~17 dBm
–
Notes:
1. No damage assuming only one parameter is set at limit at a time with all other parameters set at
or below nominal value.
2. High (1.5 – 3.0V), Low (0.0V – 0.5V).
3. To change between High Power Mode and Low Power Mode, switch Vcont accordingly.
4. In order to shut down the module, turn off Vref accordingly.
2
Table 4. Electrical Characteristics for CDMA Mode (Vcc = 3.4V, Vref = 2.85V, T = 25°C)
Characteristics
Gain
Gain_low
PAE_hi
Power Added Efficiency
PAE_low
Icc_hi
Total Supply Current
Icc_low
Iq_hi
Quiescent Current
Iq_low
Iref_hi
Reference Current
Iref_low
Control Current
[1]
Total Current in Power-down Mode
ACPR in High Power-down Mode
ACPR in Low Power-down Mode
Harmonic Suppression
Input VSWR
Stability (Spurious Output)
Noise Power in RX Band
Ruggedness
Note:
1. Control current when series 6.2kohm is used.
0.9 MHz offset
1.98 MHz offset
0.9 MHz offset
1.98 MHz offset
Second
Third
Icont
Ipd
ACPR1_hi
ACPR2_hi
ACPR1_low
ACPR2_low
2fo
3fo
VSWR
S
RxBN
Ru
VSWR 6:1, All phase
Pout = 28.0 dBm
Pout<28 dBm, Pin<10.0 dBm
-136
Pout = 17.0 dBm
Pout = 17.0 dBm
Vref = 0.0V
Pout = 28.0 dBm
Pout = 28.0 dBm
Pout = 17.0 dBm
Pout = 17.0 dBm
Pout = 28.0 dBm
Pout = 28.0 dBm
4
0.2
0.2
-50
-60
-52
-62
-33
-55
2:1
8
1
5
-47
-57
-47
-57
-30
-40
2.5:1
-60
-132
10:1
mA
mA
µA
dBc
dBc
dBc
dBc
dBc
dBc
VSWR
dBc
dBm/Hz
VSWR
Low Power Mode
Pout = 28.0 dBm
8
14
3
22
7
mA
mA
Pout = 17.0 dBm
High Power Mode
60
65
85
80
115
mA
mA
Pout = 17.0 dBm
Pout = 28.0 dBm
17.5
21
440
500
%
mA
Pout = 17.0 dBm
Pout = 28.0 dBm
15.5
37
18.5
42
dB
%
Symbol
Gain_hi
Condition
Pout = 28.0 dBm
Min.
25.5
Typ.
28.5
Max.
Unit
dB
Table 5. Electrical Characteristics for AMPS Mode (Vcc = 3.4V, Vref = 2.85V, T = 25°C)
Characteristics
Gain
Power Added Efficiency
Total Supply Current
Quiescent Current
Reference Current
Total Supply Current in Power-down Mode
Harmonic Suppression
Input VSWR
Stability (Spurious Output)
Noise Power in Rx Band
Ruggedness
Second
Third
Symbol
Gain_a
PAE_a
Icc_a
Iq_a
Iref_a
Ipd
2fo
3fo
VSWR
S
RxBN
Ru
Condition
Pout = 31.0 dBm
Pout = 31.0 dBm
Pout = 31.0 dBm
High Power Mode
Pout = 31.0 dBm
Min.
25
50
Typ.
28
54
685
Max.
31
Unit
dB
%
740
115
7
5
-30
-40
2.5:1
-50
mA
mA
mA
µA
dBc
dBc
VSWR
dBc
dBm/Hz
VSWR
60
85
3
0.2
-33
-50
2:1
Vcc = 3.4, Vref = 0, Vcont = 0V
Pout = 31.0 dBm
Pout = 31.0 dBm
VSWR 6:1, All phase
Pout = 31.0 dBm
Pout<31.0 dBm, Pin<10.0 dBm
-136
-132
10:1
3
Characterization Data
(Vcc = 3.4V, Vref = 2.85V, T = 25°C, Fo = 837 MHz)
500
450
400
350
300
250
200
150
100
50
0
-10
30
25
ICCT (mA)
GAIN (dB)
20
15
10
5
-5
0
5
10
Pout (dBm)
15
20
25
30
0
-10
-5
0
5
10
Pout (dBm)
15
20
25
30
Figure 1. Total Current vs. Output Power.
Figure 2. Gain vs. Output Power.
45
40
35
30
PAE (%)
-40
-45
-50
ACPR1 (dBc)
-55
-60
-65
-70
-75
25
20
15
10
5
0
-10
-5
0
5
10
Pout (dBm)
15
20
25
30
-80
-10
-5
0
5
10
Pout (dBm)
15
20
25
30
Figure 3. Power Added Efficiency vs. Output Power.
Figure 4. Adjacent Channel Power Ratio 1 vs. Output Power.
-40
-45
-50
ACPR2 (dBc)
-55
-60
-65
-70
-75
-80
-10
-5
0
5
10
Pout (dBm)
15
20
25
30
Figure 5. Adjacent Channel Power Ratio 2 vs. Output Power.
4
Evaluation Board Description
Vref
Vcont
R1
6.2kohm
RF In
4 RF In
5 Vcc1
GND 7
Vcc2 6
C1
100pF
C2
100pF
1 Vref
2 Vcont
3 GND
GND 10
GND 9
RF Out
RF Out 8
Vcc1
C4
2.2µF
C3
100pF
C5
680pF
C6 Vcc2
2.2µF
Figure 6. Evaluation Board Schematic.
R1
C2
C1
Agilent
WS1113
PYYWW
AAAAA
C3
C4
C5
C6
Figure 7. Evaluation Board Assembly Diagram.
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