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WS512K32-55G4TCA

SRAM Module, 512KX32, 55ns, CMOS, CQFP68, 40 X 40 MM, 3.50 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68

器件类别:存储    存储   

厂商名称:White Electronic Designs Corporation

厂商官网:http://www.wedc.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
40 X 40 MM, 3.50 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68
Reach Compliance Code
unknown
最长访问时间
55 ns
其他特性
USER CONFIGURABLE AS 2M X 8
备用内存宽度
16
I/O 类型
COMMON
JESD-30 代码
S-CQFP-F68
JESD-609代码
e0
长度
39.6 mm
内存密度
16777216 bit
内存集成电路类型
SRAM MODULE
内存宽度
32
功能数量
1
端子数量
68
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX32
输出特性
3-STATE
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
QFF
封装等效代码
QFL68,1.56SQ
封装形状
SQUARE
封装形式
FLATPACK
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
座面最大高度
3.56 mm
最大待机电流
0.028 A
最小待机电流
2 V
最大压摆率
0.66 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
FLAT
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
39.6 mm
Base Number Matches
1
文档预览
White Electronic Designs
512Kx32 SRAM MODULE, SMD 5962-94611
FEATURES
Access Times of 15, 17, 20, 25, 35, 45, 55ns
Packaging
66 pin, PGA Type, 1.075" square, Hermetic
Ceramic HIP (Package 400).
68 lead, 40mm Hermetic Low Profile CQFP,
3.5mm (0.140") (Package 502)
1
68 lead, Hermetic CQFP (G2U), 22.4mm
(0.880") square (Package 510) 3.56mm
(0.140") height.
68 lead, Hermetic CQFP (G2L), 22.4mm
(0.880") square, 5.08mm (0.200") high
(Package 528).
WS512K32-XXX
TTL Compatible Inputs and Outputs
5 Volt Power Supply
Low Power CMOS
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WS512K32N-XH1X - 13 grams typical
WS512K32-XG2UX - 8 grams typical
WS512K32-XG4TX
1
- 20 grams typical
WS512K32-XG2LX - 8 grams typical
* This product is subject to change without notice.
Note 1: Package Not Recommended For New Design
Organized as 512Kx32, User Configurable as
1Mx16 or 2Mx8
Commercial, Industrial and Military Temperature
Ranges
FIGURE 1 – PIN CONFIGURATION FOR WS512K32N-XH1X
Top View
1
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
11
22
12
WE
2
#
CS
2
#
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
#
NC
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
A
18
WE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
#
WE
4
#
I/O
27
A
3
A
4
A
5
WE
3
#
CS
3
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
66
I/O
0 - 7
I/O
8 - 15
I/O
16 - 23
I/O
24 - 31
WE
1
# CS
1
#
OE#
A
0-18
Pin Description
56
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
512K X 8
512K X 8
512K X 8
512K X 8
8
8
8
8
May 2006
Rev. 17
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WS512K32-XXX
FIGURE 2 – PIN CONFIGURATION FOR WS512K32-XG4TX
1
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
0-31
A
0-18
WE#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
3 2 1 68 67 66 65 64 63 62 61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
Block Diagram
WE#
OE#
A
0-18
CS
1
#
CS
2
#
CS
3
#
CS
4
#
512K X 8
512K X 8
512K X 8
512K X 8
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
8
8
8
8
CS
1
#
OE#
CS
2
#
V
CC
A
12
A
13
A
14
A
15
A
16
A
17
NC
NC
A
18
NC
A
11
NC
NC
I/O
0 - 7
I/O
8 - 15
I/O
16 - 23
I/O
24 - 31
Note 1: Package Not Recommended For New Design
FIGURE 3 – PIN CONFIGURATION FOR WS512K32-XG2UX AND WS512K32-XG2LX
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
9 8 7 6 5 4
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
3 2 1 68 67 66 65 64 63 62 61
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
Pin Description
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Block Diagram
WE
1
# CS
1
#
OE#
A
0-18
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
#
OE#
CS
2
#
A
17
WE
2
#
WE
3
#
WE
4
#
A
18
NC
NC
512K X 8
512K X 8
512K X 8
512K X 8
8
8
8
8
I/O
0 - 7
I/O
8 - 15
I/O
16 - 23
I/O
24 - 31
May 2006
Rev. 17
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
WS512K32-XXX
TRUTH TABLE
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
CAPACITANCE
Ta = +25°C
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA)
CQFP G4T
CQFP G2U/G2L
CS
1-4
# capacitance
Data I/O capacitance
Address input capacitance
Symbol
Conditions
Max Unit
C
OE
V
IN
= 0 V, f = 1.0 MHz 50 pF
pF
C
WE
V
IN
= 0 V, f = 1.0 MHz
20
50
20
C
CS
V
IN
= 0 V, f = 1.0 MHz 20 pF
C
I/O
V
I/O
= 0 V, f = 1.0 MHz 20 pF
C
AD
V
IN
= 0 V, f = 1.0 MHz 50 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
T
A
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Symbol
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 6mA for 15 - 35ns,
I
OL
= 2.1mA for 45 - 55ns, V
CC
= 4.5
I
OH
= -4.0mA for 15 - 35ns,
I
OH
= -1.0mA for 45 - 55ns, V
CC
= 4.5
Min
Max
10
10
660
80
0.4
Units
µA
µA
mA
mA
V
V
2.4
DATA RETENTION CHARACTERISTICS
(Ta = -55°C to +125°C)
Parameter
Data Retention Supply Voltage
Data Retention Current
Low Power Data Retention Current
(WS512K32L-XXX)
Symbol
V
DR
I
CCDR1
I
CCDR2
Conditions
CS
V
CC
0.2V
V
CC
= 3V
V
CC
= 3V
Min
2.0
Max
5.5
28
16
Units
V
mA
mA
May 2006
Rev. 17
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
AC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
T
A
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
Min
15
0
15
8
2
0
12
12
2
0
12
12
-15
Max
15
0
17
9
2
0
12
12
Min
17
-17
Max
17
0
20
10
2
0
12
12
Min
20
-20
Max
20
0
25
12
4
0
15
15
Min
25
-25
Max
25
0
35
25
Min
35
-35
Max
35
WS512K32-XXX
-45
Min
45
0
45
25
4
0
20
20
4
0
Max
45
0
Min
55
-55
Max
55
55
25
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
20
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
T
A
+125°C
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
Min
15
13
13
10
13
2
0
2
8
0
0
-15
Max
Min
17
15
15
11
15
2
0
2
9
0
-17
Max
Min
20
15
15
12
15
2
0
3
11
0
-20
Max
Min
25
17
17
13
17
2
0
4
13
0
-25
Max
Min
35
25
25
20
25
2
0
4
15
0
-35
Max
Min
45
35
35
25
35
2
5
5
20
0
-45
Max
Min
55
50
50
25
40
2
5
5
20
-55
Units
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1. This parameter is guaranteed by design but not tested.
2. The Address Setup Time of minimum 2ns is for the G2U, G1U and H1 packages. t
AS
minimum for the G4T package is 0ns.
FIGURE. 4 – AC TEST CIRCUIT
AC Test Conditions
I
OL
Current Source
D.U.T.
C
eff
= 50 pf
V
Z
≈ 1.5V
(Bipolar Supply)
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Current Source
I
OH
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
May 2006
Rev. 17
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
FIGURE 5 – TIMING WAVEFORM - READ CYCLE
WS512K32-XXX
CS#
OE#
READ CYCLE 2, (CS# = OE# = V
IL
, WE# = V
IH
)
READ CYCLE 2 (WE# = V
IH
)
FIGURE 6 – WRITE CYCLE - WE# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
FIGURE 7 – WRITE CYCLE - CS# CONTROLLED
WS32K32-XHX
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
May 2006
Rev. 17
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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