White Electronic Designs
512Kx32 SRAM 3.3V MULTICHIP PACKAGE
FEATURES
n
Access Times of 15, 17, 20ns
n
Low Voltage Operation
n
Packaging
66-pin, PGA Type, 1.075 inch square, Hermetic
Ceramic HIP (Package 400)
68 lead, 23.9mm (0.940 inch) sq., Low Profile CQFP,
(G1T), 4.06 (0.160 inch) high, (Package 524)
68 lead, 22.4mm (0.880 inch) CQFP, (G2U),
3.56mm (0.140"), (Package 510)
68 lead, 23.9mm (0.940 inch) sq., Low Profile
CQFP, (G1U)
1
, 3.56mm (0.140 inch) high,
(Package 519)
n
Organized as 512Kx32; User Configurable as
1Mx16 or 2Mx8
n
Commercial, Industrial and Military Temperature
Ranges
n
n
n
n
n
n
n
WS512K32V-XXX
PRELIMINARY*
Low Voltage Operation:
3.3V ± 10% Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
Fully Static Operation:
No clock or refresh required.
Three State Output.
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WS512K32V-XG1TX - 5 grams typical
WS512K32V-XG1UX
1
- 5 grams typical
WS512K32V-XG2UX - 8 grams typical
WS512K32NV-XH1X - 13 grams typical
Note 1: Package Not Recommended For New Design
*This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
P
IN
C
ONFIGURATION
F
OR
WS512K32NV-XH1X
T
OP
V
IEW
1
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
11
22
12
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
18
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
66
8
8
8
8
P
IN
D
ESCRIPTION
I/O
0-31
Data Inputs/Outputs
56
A
0-18
WE
1-4
CS
1-4
OE
V
CC
GND
NC
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
B
LOCK
D
IAGRAM
W E
1
CS
1
OE
A
0
-
18
512K x 8
512K x 8
512K x 8
512K x 8
W E
2
CS
2
W E
3
CS
3
W E
4
CS
4
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
March 2003 Rev. 8
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS512K32V-XXX
P
IN
C
ONFIGURATION
F
OR
WS512K32V-XG1TX, WS512K32V-XG2UX A
ND
WS512K32V-XG1UX
1
T
OP
V
IEW
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
GND
CS
4
WE
1
A
6
A
7
A
8
A
9
A
10
V
CC
P
IN
D
ESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-18
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
OE
A
0
-
18
512K x 8
512K x 8
512K x 8
512K x 8
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
WE
1-4
CS
1-4
OE
Vcc
GND
NC
B
LOCK
D
IAGRAM
W E
1
CS
1
W E
2
CS
2
W E
3
CS
3
W E
4
CS
4
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
CS
1
OE
CS
2
A
17
WE
2
WE
3
WE
4
A
11
A
12
A
13
A
14
A
15
A
16
A
18
V
CC
NC
NC
8
8
8
8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
2
White Electronic Designs
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
-0.5
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
WS512K32V-XXX
T
RUTH
T
ABLE
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
V
CC
+ 0.3
+0.8
Unit
V
V
V
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G2U/G1U/G1T
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
C
APACITANCE
(T
A
= +25°C)
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
20
20
20
20
50
Unit
pF
pF
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC C
HARACTERISTICS
(V
CC
= 3.3V ± 0.3V, T
A
= -55°C
TO
+125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
Sym
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, V
CC
= 3.6V
CS = V
IH
, OE = V
IH
, f = 5MHz, V
CC
= 3.6V
I
OL
= 4.0mA
I
OH
= -4.0mA
2.4
Min
Max
10
10
400
200
0.4
Units
µA
µA
mA
mA
V
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V.
NOTE: Contact factory for low power option.
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
AC C
HARACTERISTICS
(V
CC
= 3.3V, T
A
= -55°C
TO
+125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
t
OLZ
1
WS512K32V-XXX
Symbol
Min
15
-15
Max
15
0
15
8
1
0
8
8
1
0
0
Min
17
-17
Max
17
0
17
8
1
0
8
8
Min
20
-20
Max
Units
ns
20
20
10
ns
ns
ns
ns
ns
ns
10
10
ns
ns
1
t
CHZ
1
t
OHZ
1
1. This parameter is guaranteed by design but not tested.
AC C
HARACTERISTICS
(V
CC
= 3.3V, T
A
= -55°C
TO
+125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
t
DH
1
Symbol
Min
15
12
12
9
12
0
0
2
-15
Max
Min
17
12
12
9
14
0
0
3
8
0
0
-17
Max
Min
20
14
14
10
14
0
0
3
8
0
-20
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
9
ns
ns
t
WHZ
1
1. This parameter is guaranteed by design but not tested.
AC T
EST
C
IRCUIT
Parameter
I
OL
Current Source
AC T
EST
C
ONDITIONS
Typ
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Unit
V
ns
V
V
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
(Bipolar Supply)
I
OH
Current Source
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75W.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
4
White Electronic Designs
T
IMING
W
AVEFORM
- R
EAD
C
YCLE
t
RC
ADDRESS
WS512K32V-XXX
t
RC
ADDRESS
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
AA
CS
t
ACS
t
CLZ
OE
t
CHZ
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 2 (WE = V
IH
)
W
RITE
C
YCLE
- WE C
ONTROLLED
t
WC
ADDRESS
t
AW
CS
t
CW
t
AH
t
AS
WE
t
WP
t
OW
t
WHZ
t
DW
t
DH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
W
RITE
C
YCLE
- CS C
ONTROLLED
t
WC
ADDRESS
WS32K32-XHX
t
AS
t
AW
t
CW
t
WP
t
AH
CS
WE
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, CS CONTROLLED
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
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