WSD520G
Surface Mount Schottky Barrier Diodes
P b
Lead(Pb)-Free
Feature:
* Ultra Small mold type
* Low I
R
* High Reliability
SMALL SIGNAL
SCHOTTKY DIODES
100m AMPERES
30 VOLTS
1
Description:
Low current rectification
2
SOD-723
SOD-723 Outline Dimensions
A
−X−
−Y−
B
D
2X
SOD-723
Dim
A
B
C
D
E
J
K
Min
0.95
0.55
0.49
0.25
0.15
0.08
1.35
Max
1.05
0.65
0.55
0.32
0.25
0.15
1.45
0.08
X Y
C
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT
1.1
0.45
J
E
K
0.50
SCALE 10:1
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21-Oct-2010
WSD520G
Maximum Ratings
(T
A
=25˚C Unless otherwise noted)
Characteristic
DC Reverse Voltage
Symbol
V
R
I
O
Peak Forward Surge Current
Operation Junction Temperature Range
Storage Temperature Range
I
FSM
T
J
T
stg
Value
30
100
500
125
-40 to +125
Unit
V
mA
mA
˚C
˚C
Electrical Characteristics
Characteristic
Forward Voltage
I
F
=10mA
Reverse Leakage
V
R
=10V
(T
A
=25˚C Unless otherwise noted)
Symbol
V
F
I
R
Min
-
-
Typ
-
-
Max
0.45
0.5
Unit
V
µA
Device Marking
Item
WSD520G
Marking
E
Eqivalent Circuit diagram
1
2
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21-Oct-2010
WSD520G
Electrical Characteristic Curves
1000
1000000
(T
A
=25°C)
Ta=125℃
100
f=1MH½
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
10
1
0.1
0.01
0.001
0
Ta=75℃
10000
1000
100
Ta=75℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
100
Ta=125℃
100000
Ta=-25℃
Ta=25℃
Ta=25℃
10
Ta=-25℃
10
1
1
0
10
20
0
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
100
200
300
400
500
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
370
1000
20
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
360
350
340
330
AVE:338.8mV
320
Ta=25℃
IF=10mA
n=30pcs
900
800
700
600
500
400
300
200
100
0
AVE:100.5nA
Ta=25℃
VR=10V
n=30pcs
19
18
17
16
15
14
13
12
11
10
AVE:15.94pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
10
10
Ifsm
8.3ms 8.3ms
1cyc
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
1cyc
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
t
10
AVE:3.90A
5
5
5
0
0
1
IFSM DISRESION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1000
0.1
Rth(j-a)
0.08
DC
D=1/2
0.06
Sin(θ＝180)
0.04
0.02
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.2
0.02
TRANSIENT
THAERMAL IMPEDANCE:Rth
(℃/W)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
IF=100mA
REVERSE POWER
DISSIPATION:P
R
(W)
FORWARD POWER
DISSIPATION:Pf(W)
0.015
0.01
DC
0.005
Sin(θ＝180)
D=1/2
1m
time
300u
10
0.001
0
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
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WSD520G
0.3
0.3
0A
0V
0.2
DC
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
125
Io
0A
0V
0.2
DC
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
Io
t
T
VR
D=t/T
VR=15V
Tj=125℃
AVERAGE RECTIFI
FORWARD CURRENT:Io(A)
t
T
VR
D=t/T
VR=15V
Tj=125℃
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AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
4/4
21-Oct-2010
