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X28C512R-15

EEPROM, 64KX8, 150ns, Parallel, CMOS, CDSO32, CERAMIC, SOIC-32

器件类别:存储    存储   

厂商名称:Xicor Inc

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器件参数
参数名称
属性值
包装说明
SOP,
Reach Compliance Code
unknown
最长访问时间
150 ns
其他特性
100000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION; 128-BYTE PAGE
数据保留时间-最小值
10
耐久性
100000 Write/Erase Cycles
JESD-30 代码
R-CDSO-G32
内存密度
524288 bit
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
32
字数
65536 words
字数代码
64000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64KX8
输出特性
3-STATE
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
编程电压
5 V
认证状态
Not Qualified
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
最长写入周期时间 (tWC)
10 ms
Base Number Matches
1
文档预览
X28C512/X28C513
512K
X28C512/X28C513
5 Volt, Byte Alterable E
2
PROM
64K x 8 Bit
FEATURES
Access Time: 90ns
Simple Byte and Page Write
—Single 5V Supply
— No External High Voltages or V
PP
Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Low Power CMOS:
—Active: 50mA
—Standby: 500µA
Software Data Protection
—Protects Data Against System Level
Inadvertant Writes
High Speed Page Write Capability
Highly Reliable Direct Write™ Cell
—Endurance: 100,000 Write Cycles
—Data Retention: 100 Years
Early End of Write Detection
—DATA Polling
—Toggle Bit Polling
TSOP
A11
A9
A8
A13
A14
NC
NC
NC
WE
VCC
NC
NC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Two PLCC and LCC Pinouts
—X28C512
—X28C010 E
2
PROM Pin Compatible
—X28C513
—Compatible with Lower Density E
2
PROMs
DESCRIPTION
The X28C512/513 is an 64K x 8 E
2
PROM, fabricated
with Xicor’s proprietary, high performance, floating gate
CMOS technology. Like all Xicor programmable non-
volatile memories the X28C512/513 is a 5V only device.
The X28C512/513 features the JEDEC approved pinout
for bytewide memories, compatible with industry stan-
dard EPROMS.
The X28C512/513 supports a 128-byte page write op-
eration, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds. The X28C512/513 also features
DATA
Polling
and Toggle Bit Polling, system software support schemes
used to indicate the early completion of a write cycle. In
addition, the X28C512/513 supports the Software Data
Protection option.
PIN CONFIGURATIONS
PLCC / LCC
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
NC
NC
VSS
NC
NC
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLASTIC DIP
CERDIP
FLAT PACK
SOIC (R)
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
X28C512
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
3856 FHD F01
X28C512
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
30
32 31 29
54 3 2
1
6
28
7
27
26
8
X28C512
25
9
(TOP VIEW)
24
10
11
23
12
22
13
15 16 17 18 19 20 21
14
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
I/O6
A12
A15
NC
NC
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
3856 FHD F03
PGA
I/O0
I/O2
I/O3
I/O5
I/O6
15
17
19
21
22
A1
13
A2
12
A4
10
A6
8
A12
6
A0
14
A3
11
A5
9
A7
7
A15
5
NC
4
NC
2
NC
3
VCC
NC
36
34
NC
1
WE
35
BOTTOM
VIEW
CE
I/O1
VSS
I/O4
I/O7
16
18
20
23
24
A10
25
A11
27
A8
29
NC
32
NC
33
OE
26
A9
28
A13
30
A14
31
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
30
32 31 29
54 3 2
1
6
28
7
27
26
8
X28C513
25
9
(TOP VIEW)
24
10
11
23
12
22
13
15 16 17 18 19 20 21
14
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
A7
A12
A14
A15
VCC
WE
A13
3856 ILL F22
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
3856 FHD F02
3856 FHD F04
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
3856-3.1 2/24/99 T1/C0/D0 NS
1
Characteristics subject to change without notice
X28C512/X28C513
PIN DESCRIPTIONS
Addresses (A
0
–A
15
)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/
write operations. When
CE
is HIGH, power consumption
is reduced.
Output Enable (OE)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
Data In/Data Out (I/O
0
–I/O
7
)
Data is written to or read from the X28C512/513 through
the I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28C512/513.
PIN NAMES
Symbol
A
0
–A
15
I/O
0
–I/O
7
WE
CE
OE
V
CC
V
SS
NC
Description
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
+5V
Ground
No Connect
3856 PGM T01
FUNCTIONAL DIAGRAM
A7–A15
X BUFFERS
LATCHES AND
DECODER
512K-BIT
E2PROM
ARRAY
A0–A6
Y BUFFERS
LATCHES AND
DECODER
I/O BUFFERS
AND LATCHES
I/O0–I/O7
DATA INPUTS/OUTPUTS
CE
OE
WE
VCC
VSS
3856 FHD F05
CONTROL
LOGIC AND
TIMING
2
X28C512/X28C513
DEVICE OPERATION
Read
Read operations are initiated by both
OE
and
CE
LOW.
The read operation is terminated by either
CE
or
OE
returning HIGH. This two line control architecture elimi-
nates bus contention in a system environment. The data
bus will be in a high impedance state when either
OE
or
CE
is HIGH.
Write
Write operations are initiated when both
CE
and
WE
are
LOW and
OE
is HIGH. The X28C512/513 supports both
a
CE
and
WE
controlled write cycle. That is, the address
is latched by the falling edge of either
CE
or
WE,
whichever occurs last. Similarly, the data is latched
internally by the rising edge of either
CE
or
WE,
which-
ever occurs first. A byte write operation, once initiated,
will automatically continue to completion, typically within
5ms.
Page Write Operation
The page write feature of the X28C512/513 allows the
entire memory to be written in 2.5 seconds. Page write
allows two to one hundred twenty-eight bytes of data to
be consecutively written to the X28C512/513 prior to the
commencement of the internal programming cycle. The
host can fetch data from another device within the
system during a page write operation (change the source
address), but the page address (A
7
through A
15
) for
each subsequent valid write cycle to the part during this
operation must be the same as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host
can write an additional one to one hundred twenty-
seven bytes in the same manner as the first byte was
written. Each successive byte load cycle, started by the
WE
HIGH to LOW transition, must begin within 100µs of
the falling edge of the preceding
WE.
If a subsequent
WE
HIGH to LOW transition is not detected within
100µs, the internal automatic programming cycle will
commence. There is no page write window limitation.
Effectively the page write window is infinitely wide, so
long as the host continues to access the device within
the byte load cycle time of 100µs.
Write Operation Status Bits
The X28C512/513 provides the user two write operation
status bits. These can be used to optimize a system
write cycle time. The status bits are mapped onto the
I/O bus as shown in Figure 1.
Figure 1. Status Bit Assignment
I/O
DP
TB
5
4
3
2
1
0
RESERVED
TOGGLE BIT
DATA POLLING
3856 FHD F06
DATA
Polling (I/O
7
)
The X28C512/513 features
DATA
Polling as a method
to indicate to the host system that the byte write or page
write cycle has completed.
DATA
Polling allows a simple
bit test operation to determine the status of the X28C512/
513, eliminating additional interrupt inputs or external
hardware. During the internal programming cycle, any
attempt to read the last byte written will produce the
complement of that data on I/O
7
(i.e. write data = 0xxx
xxxx, read data = 1xxx xxxx). Once the programming
cycle is complete, I/O
7
will reflect true data.
Toggle Bit (I/O
6
)
The X28C512/513 also provides another method for
determining when the internal write cycle is complete.
During the internal programming cycle, I/O
6
will toggle
from HIGH to LOW and LOW to HIGH on subsequent
attempts to read the device. When the internal cycle is
complete the toggling will cease and the device will be
accessible for additional read or write operations.
3
X28C512/X28C513
DATA
Polling I/O
7
Figure 2a.
DATA
Polling Bus Sequence
LAST
WRITE
WE
CE
OE
VIH
I/O7
HIGH Z
VOL
An
An
An
An
An
An
An
3856 FHD F07.1
VOH
X28C512/513
READY
A0–A15
Figure 2b.
DATA
Polling Software Flow
DATA
Polling can effectively halve the time for writing to
the X28C512/513. The timing diagram in Figure 2a
illustrates the sequence of events on the bus. The
software flow diagram in Figure 2b illustrates one method
of implementing the routine.
NO
WRITE DATA
WRITES
COMPLETE?
YES
SAVE LAST DATA
AND ADDRESS
READ LAST
ADDRESS
IO7
COMPARE?
YES
X28C512
READY
NO
3856 FHD F08
4
X28C512/X28C513
The Toggle Bit I/O
6
Figure 3a. Toggle Bit Bus Sequence
LAST
WRITE
WE
CE
OE
I/O6
VOH
*
VOL
HIGH Z
*
X28C512/513
READY
3856 FHD F09.1
* Beginning and ending state of I/O6 will vary.
Figure 3b. Toggle Bit Software Flow
The Toggle Bit can eliminate the software housekeeping
chore of saving and fetching the last address and data
written to a device in order to implement
DATA
Polling.
This can be especially helpful in an array comprised of
multiple X28C512/513 memories that is frequently up-
dated. Toggle Bit Polling can also provide a method for
status checking in multiprocessor applications. The
timing diagram in Figure 3a illustrates the sequence of
events on the bus. The software flow diagram in Figure
3b illustrates a method for polling the Toggle Bit.
LAST WRITE
LOAD ACCUM
FROM ADDR n
COMPARE
ACCUM WITH
ADDR n
COMPARE
OK?
YES
X28C512
READY
NO
3856 FHD F10
5
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