10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
B1008-QT
Features
Excellent Transmit LO/Output Buffer Stage
3x3mm, QFN
17.0 dB Small Signal Gain
+20.0 dBm Psat
+32 dBm Output IP3
4.5 dB Noise Figure
Variable Gain with Adjustable Bias
100% RF, DC and Output Power Testing
General Description
Mimix Broadband’s two stage 10.0-21.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 17.0
dB with a +19.0 dBm P1dB output compression point.
The device also provides variable gain regulation with
adjustable bias. The device is ideally suited as an LO or
RF buffer stage with broadband performance at a very
low cost. The device comes in an RoHS compliant
3x3mm QFN surface mount package offering excellent
RF and thermal properties. This device is well suited for
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
10.0
-
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
12.0
12.0
17.0
+/-2.0
65.0
4.5
+19.0
+20.0
+32.0
+4.0
-0.1
90
Max.
21.0
-
-
-
-
-
-
-
-
-
+5.5
0.0
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
B1008-QT
Buffer Amplifier Measurements
XB1008-QT, Vd = 4V, Id = 100 mA: Input Return Loss vs Frequency
0
-2
-4
-6
S11 (dB)
S21 (dB)
-8
-10
-12
-14
-16
-18
-20
5
7
9
11
13
15
17
19
21
23
25
Frequency (GHz)
20
18
16
14
12
10
8
6
4
2
0
5
7
9
11
13
15
17
19
21
23
25
Frequency (GHz)
XB1008-QT, Vd = 4V, Id = 100 mA: Small Signal Gain vs Frequency
XB1008-QT, Vd = 4V, Id = 100 mA: Output Return Loss vs Frequency
0
XB1008-QT: OIP3 vs Frequency. 4V, 90 mA, Pin = -15dBm
35
-5
30
S22 (dB)
-10
-15
OIP3 (dBm)
5
7
9
11
13
15
17
19
21
23
25
Frequency (GHz)
25
20
-20
15
-25
10
10
11
12
13
14
15
16
17
18
19
20
21
Frequency (GHz)
XB1008-QT: OIP3 vs Frequency. 4V, 20 - 100mA, Pin = -15dBm
35
30
25
OIP3 (dBm)
20
15
10
5
0
10
11
12
13
14
15
16
17
18
19
20
21
Frequency (GHz)
Id av(mA)=20
Id av(mA)=30
Id av(mA)=40
Id av(mA)=50
Id av(mA)=60
Id av(mA)=70
Id av(mA)=80
Id av(mA)=90
Id av(mA)=100
XB1008-QT: Output Power. Vd = 4V, Id = 100mA
22
20
18
16
Power out (dBm)
14
12
10
8
6
4
2
0
-14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pin (dBm)
11 GHz
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
17 GHz
18 GHz
19 GHz
20 GHz
21 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
B1008-QT
Buffer Amplifier Measurements (cont.)
22
20
18
16
Power out (dBm)
14
12
10
8
6
4
2
0
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Freq (GHz)
Pin = -10 dBm
Pin = -8 dBm
Pin = -6 dBm
Pin = -4 dBm
Pin = -2 dBm
Pin = 0 dBm
Pin = 2 dBm
Pin = 4 dBm
Pin = 6 dBm
Pin = 8 dBm
Pin = 10 dBm
XB1008-QT: Power out vs Frequency. Vd = 4V and Id = 100mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
B1008-QT
Package Dimensions / Layout
Note: All unused GND pins should be tied to center ground on application board
for best thermal conductivity.
Functional Block Diagram
gnd
1
6
gnd
1
5
gnd
1
4
VD
1
3
Pin Designations
12
11
10
9
gnd
gnd
RF Out
gnd
Pin Number Pin Name Pin Function Nominal Value
1-2
GND
Ground
3
RF In
RF Input
4
GND
Ground
5
VG
Gate Bias
-0.5V
6-9
GND
Ground
10
RF Out
RF Output
11-12
GND
Ground
13
VD
Drain Bias
4.5V, 130 mA
14-16
GND
Ground
gnd
gnd
RF In
gnd
1
2
3
4
5
VG
6
gnd
7
gnd
8
gnd
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier, QFN
September 2007 - Rev 12-Sep-07
B1008-QT
App Note [1] Biasing -
The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most
reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is
-0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure
negative gate bias is available before applying the positive drain supply.
MTTF Graphs
1.00E+09
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XB1008-QT Vd=4.0 V Id=130 mA
1.00E+04
XB1008-QT Vd=4.0 V Id=130 mA
1.00E+08
1.00E+03
MTTF (hours)
1.00E+07
FITS
1.00E+02
1.00E+06
1.00E+01
1.00E+05
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
1.00E+00
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
