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XE73S-L1-24.000MHZ

HCMOS Output Clock Oscillator,

器件类别:无源元件    振荡器   

厂商名称:Xsis Electronics Inc

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器件参数
参数名称
属性值
Objectid
8143035329
Reach Compliance Code
compliant
其他特性
ALSO COMPATIBLE WITH ACMOS O/P
最长下降时间
5 ns
频率调整-机械
NO
频率稳定性
50%
安装特点
THROUGH HOLE MOUNT
标称工作频率
24 MHz
最高工作温度
70 °C
最低工作温度
-10 °C
振荡器类型
HCMOS
输出负载
10 KOHM, 15 pF
物理尺寸
7.0mm x 5.0mm x 2.54mm
最长上升时间
5 ns
最大供电电压
3.63 V
最小供电电压
2.97 V
标称供电电压
3.3 V
表面贴装
NO
最大对称度
55/45 %
文档预览
REV LTR
-
Orig. Release
DESCRIPTION
DATE
1/18/15
APPVD.
MLG
XSIS XE73S – Lx, SERIES
HC/ACMOS OSCILLATORS
FOR SPACE APPLICATIONS
500 KHz to 125 MHz
( 5 x 7 mm, Thru-Hole Mount, 3.3 V )
REV STATUS
OF SHEETS
APPROVALS
PREP.
ENG.
M. Gupta
Q. A.
M. Gupta
CUST.
ENG.
CUST
Q A.
S. Gupta
REV
SHEET NO.
1
DATE
1/18/15
1/18/15
1/18/15
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
XSIS ELECTRONICS, INC.
12620 W. 63
rd
Street, Shawnee, KS 66216 USA
XE73S-Lx SERIES HC/ACMOS
“S” LEVEL OSCILLATORS
FSC NO.
57051
SCALE
N/A
SHEET
DWG. NO.
XE73S-Lx
1 OF 3
1.
SCOPE: XE73S-Lx, HC/ACMOS series, high reliability hybrid microcircuit crystal oscillators are
specifically designed, produced and tested by Xsis Electronics, Inc. for use in space applications.
2.
APPLICABLE DOCUMENTS:
MIL-PRF-55310E
MIL-PRF-38534G
MIL-STD-883E
Oscillator, Crystal Controlled, General Specifications for
Hybrid Microcircuits, General Specifications for
Test Methods and Procedures for Microelectronics
3.
3.1
REQUIREMENTS:
General: The individual item requirements shall be as specified herein.
Package: Ceramic, 90% Min. AL
2
O
3.
Thermal Resistance,
θ
JC
: 75 C / Watt.
o
3.2
3.2.1 Termination Finish: 1.0
µm
minimum gold plate over nickel. Hot Solder tinning with Sn60/Pb40
solder per MIL-PRF-55310 is optional at an additional cost.
3.2.2 Weight:
0.4 Gms Max.
o
3.2.3 Reflow Soldering: Reflow soldering at 260 C for 10 seconds shall not degrade the performance.
-8
3.3
Hermeticity: Resistance welded, hermetically sealed, leak rate of 1(10)
atm-cc/s Max.
3.4.
Marking: As a minimum, the parts shall be marked with Xsis P/N and date code.
3.5
Absolute Maximum Ratings: Unless otherwise specified, absolute maximum ratings shall be as
follows:
Supply Voltage
Operating Free-Air Temperature Range
Storage Temperature
-0.5 to +5 VDC
o
o
-55 C to +125 C
o
o
-55 C to +125 C
3.6
Electrical Characteristics: See Table I
3.6.1 Total Dose Radiation: Hybrid Microcircuit Crystal Oscillators shall be capable of meeting the
electrical characteristics of Para. 3.6 after being exposed to total ionizing dose radiation of
100 krads as per MIL-STD-883, method 1019.
3.7
Hybrid Elements:
3.7.1 Quartz Crystals: High grade cultured quartz crystals shall be used. As an option, Xsis will use
premium Q swept quartz crystals at an additional charge. Crystal element evaluation shall be in
accordance with MIL-PRF-55310. If swept quartz crystal is required, it must be specified on the
purchase order.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
USA
DWG. NO.
REV
St., Shawnee, KS 66216
57051
SCALE
N/A
XE73S-Lx
SHEET
2 OF 9
3.7.2 Passive Elements: Established Reliability (ER) QPL components, failure level R minimum shall
be used or element lot evaluation shall be as per MIL-PRF-55310, class S, or MIL-PRF-38534,
Appendix C, Class K as applicable.
3.7.3 Microcircuit die shall be from lots that have passed the element evaluation per MIL-PRF-55310,
Appendix B, Level S, except testing per Subgroup 5 is omitted. Subgroup 5 testing is circuit
configuration dependent, therefore, it is more effectively performed at the oscillator level as
explained in Paragraph 3.7.4 herein.
3.7.4 For Output Frequency up to 85 MHz, Microcircuit die used in the oscillator shall be from NSC/FC
54ACT family and must be from wafer lot that has been successfully tested in the oscillator for
ionizing radiation of up to100 krads and is Single Event Latch-up immune for LET of up to 95
2
Mev-cm /mg. Xsis Electronics has also performed SET & SEL testing on the microcircuit die.
Test reports are available on request. For output frequencies above 85 MHz, the microcircuit die
shall be from 0,8 µm BiCMOS Si family and must be from wafer lots that have been successfully
tested in the oscillator for ionizing radiation of up to 100Krads and is known to be Single Event
2
Latch-up immune for LET of up to 95 Mev-cm /mg.
3.7.5 Workmanship, Rework and Process controls shall be in accordance with the requirements of
MIL-PRF-55310.
3.7.6 Lot Traceability: Production lot for these oscillators shall be homogenous. Each element used in
the production lot shall be traceable to a single lot. Swept quartz shall be traceable to the quartz
bar, and its applicable processing details.
4.
Quality Assurance Provisions: The quality assurance provisions shall be per MIL-PRF-55310,
except as specified herein.
100% Screening: The 100% screening shall be performed as per Table II. PDA requirements for
nondestructive bond pull and burn-in shall be as specified below.
PDA for Nondestruct Bond Pull: Unless otherwise specified, PDA shall be 2% of total number of
wires or 1 wire whichever is greater.
PDA for Burn-in: Unless otherwise specified, PDA for burn-in shall be 2% or 1 oscillator whichever
o
o
is greater and shall be applicable to +23 C and/or +25 C static tests only. In addition Delta
Calculation shall be performed after Burn-in and shall count for PDA. All measured values for
Delta Calculation shall be recorded. Parts that exceed the specified delta limits shall be rejected and
be counted for PDA. Delta Calculation shall be performed at 3.3 VDC for the following parameters:
Input Current
Output High Level
Output Low Level
10% change Maximum
10% change Maximum
0.1V change Maximum
4.1
4.2
4.3
4.4
4.5
Group A inspection shall be in accordance with MIL-PRF-55310 for product level S.
Group B inspection ( 30 day aging ) shall be in accordance with MIL-PRF-55310 for product level S.
In order to expedite delivery, by customer request, the aging test can be ended after 15 days if the
amount of frequency aging is less than 50% of the 30 day specification limit.
Oscillators shall be capable of meeting group C inspection per MIL-PRF-55310. Generic group C
inspection data on similar parts may be used to satisfy this requirement. When specified by the
Customer, Xsis Electronics will perform Group C testing at an additional charge.
FSC NO.
USA
DWG. NO.
REV
4.6
XSIS ELECTRONICS, INC.
12620 W. 63
rd
St., Shawnee, KS 66216
57051
SCALE
N/A
XE73S-Lx
SHEET
3 OF 9
4.7
Inspection and Test Data: Unless otherwise specified in the purchase order, the following
Inspection and test data documentation shall be supplied with the parts.
Certificate of Conformance
Summary of Class “S” screening Test Results
PDA Calculations for Non-Destruct Bond Pull and Burn-in
Summary of Elements Lot Traceability
Electrical Tests before and after Burn-in
Group A Inspection Summary
Group B (30 day Aging) Data
Radiographic Inspection Certificate
4.8
The following test and inspection options are available at customer request.
Customer Source Inspection for Pre-Cap and Final
Group C Inspection per MIL-PRF-55310 on 4 or 8 units
DPA (Destructive Physical Analysis)
Life Test, 1000 Hrs at 125C per MIL-STD-883, Method 1005, Cond. A
MIL-PRF-38534, Group B Inspection
MIL-PRF-38534, Group C Inspection
5.0
Preservation, Packaging and Packing: The oscillators shall be clean, dry and packaged in a
manner to provide adequate protection against electrostatic discharge, corrosion, deterioration
and physical damage during shipment.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
USA
DWG. NO.
REV
St., Shawnee, KS 66216
57051
SCALE
N/A
XE73S-Lx
SHEET
4 OF 9
6.0 Part Numbering Example:
XE73S - L
Model #
(See Note Below)
-
FREQUENCY
Add Suffix “ G ” if Enable/Disable is Required
*
Overall Frequency Accuracy Options
1 = + 50 PPM
2 = + 25 PPM
3 = + 100 PPM
4 = + 50 PPM
5 = + 25 PPM
6 = + 100 PPM
7 = + 75 PPM
8 = + 60 PPM
-10
o
C
-10
o
C
-40
o
C
-40
o
C
-40
o
C
-55
o
C
-55
o
C
-55
o
C
to +70
o
C
to +70
o
C
to +85
o
C
to +85
o
C
to +85
o
C
to +125
o
C
to +125
o
C
to +105
o
C
Load variations and 5 year aging
*
Overall Frequency Accuracy includes effects of Operating Temperature, Supply Voltage,
P/N Example: XE73S - L7 - 24.000 MHz = 24.000 MHz, Class “S” Oscillator, + 75 PPM Overall Frequency Accuracy
o
o
over an operating temperature range of -55 C to +125 C,
NOTE:
Following additional models are available for applications that can accommodate reduced level of
screening and quality conformance inspection:
XE73H:
Model XE73H
is same as
Model XE73S
except as follows:
Group A inspection is per MIL-PRF-55310, Class B
Group B inspection (30 day aging ) per MIL-PRF-55310 is not applicable
XE73E:
Model XE73E
uses the same design and elements as
Model X73S
except as follows:
100% screening is as per Table III herein
PDA for Burn-in is 10% or 1 unit whichever is greater
Delta measurements of paragraph 4.3 are not applicable
Group A inspection is as per MIL-PRF-55310, Class B
Group B inspection (30 day aging ) per MIL-PRF-55310 is not applicable
XE73B:
Model XE73B
is same as
Model XE73E
except as follows:
Active and Passive Elements are as per MIL-PRF-55310, Class B. Microcircuit die
is similar to the one used in Model XE7S but is not from radiation tested wafer lot.
XE73P:
Model XE73P
is a form, fit and function equivalent prototype of
Model XE73S.
Prototypes may use commercial grade elements and are not screened. Quality
Conformance inspection is not applicable.
XSIS ELECTRONICS, INC.
12620 W. 63
rd
FSC NO.
USA
DWG. NO.
REV
St., Shawnee, KS 66216
57051
SCALE
N/A
XE73S-Lx
SHEET
5 OF 9
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参数对比
与XE73S-L1-24.000MHZ相近的元器件有:XE73S-L8-125.000MHZ、XE73S-L5-24.000MHZ、XE73S-L4-24.000MHZ、XE73S-L3-125.000MHZ、XE73S-L3G-125.000MHZ、XE73S-L6-125.000MHZ、XE73S-L6G-125.000MHZ。描述及对比如下:
型号 XE73S-L1-24.000MHZ XE73S-L8-125.000MHZ XE73S-L5-24.000MHZ XE73S-L4-24.000MHZ XE73S-L3-125.000MHZ XE73S-L3G-125.000MHZ XE73S-L6-125.000MHZ XE73S-L6G-125.000MHZ
描述 HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator, HCMOS Output Clock Oscillator,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
其他特性 ALSO COMPATIBLE WITH ACMOS O/P ALSO COMPATIBLE WITH ACMOS O/P ALSO COMPATIBLE WITH ACMOS O/P ALSO COMPATIBLE WITH ACMOS O/P ALSO COMPATIBLE WITH ACMOS O/P ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH ACMOS O/P ALSO COMPATIBLE WITH ACMOS O/P ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH ACMOS O/P
最长下降时间 5 ns 3 ns 5 ns 5 ns 3 ns 3 ns 3 ns 3 ns
频率调整-机械 NO NO NO NO NO NO NO NO
频率稳定性 50% 60% 25% 50% 100% 100% 100% 100%
安装特点 THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
标称工作频率 24 MHz 125 MHz 24 MHz 24 MHz 125 MHz 125 MHz 125 MHz 125 MHz
最高工作温度 70 °C 105 °C 85 °C 85 °C 85 °C 85 °C 125 °C 125 °C
最低工作温度 -10 °C -55 °C -40 °C -40 °C -40 °C -40 °C -55 °C -55 °C
振荡器类型 HCMOS HCMOS HCMOS HCMOS HCMOS HCMOS HCMOS HCMOS
输出负载 10 KOHM, 15 pF 10 KOHM, 15 pF 10 KOHM, 15 pF 10 KOHM, 15 pF 10 KOHM, 15 pF 10 KOHM, 15 pF 10 KOHM, 15 pF 10 KOHM, 15 pF
物理尺寸 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm 7.0mm x 5.0mm x 2.54mm
最长上升时间 5 ns 3 ns 5 ns 5 ns 3 ns 3 ns 3 ns 3 ns
最大供电电压 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V
最小供电电压 2.97 V 2.97 V 2.97 V 2.97 V 2.97 V 2.97 V 2.97 V 2.97 V
标称供电电压 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO NO NO NO NO NO
最大对称度 55/45 % 55/45 % 55/45 % 55/45 % 55/45 % 55/45 % 55/45 % 55/45 %
Objectid 8143035329 - - 7023610379 7023610372 7023610375 7023610390 7023610393
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