This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP04316
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
■
Features
■
Package
■
Basic Part Number
•
UNR2216
+
UNR2116
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
V
CBO
V
CEO
I
C
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
Ma
int
en
an
ce
/D
isc
on
tin
T
stg
d
pla inc
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4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Rating
50
50
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
6
•
Code
SMini6-G1
•
Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
■
Marking Symbol: 7U
■
Internal Connection
5
4
100
mA
V
V
−50
−50
Tr1
Tr2
1
2
3
−100
150
150
mA
°C
mW
°C
ue
−55
to
+150
Publication date: May 2009
SJJ00181CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04316
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
160
Min
50
50
0.1
0.5
0.01
460
0.25
Typ
Max
Unit
V
V
µA
µA
mA
V
V
0.2
V
+30%
Output voltage low-level
Input resistance
V
OL
R
1
f
T
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
•
Tr2
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
V
CE(sat)
V
OH
V
OL
R
1
f
T
Transition frequency
Common characteristics chart
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
Ma
int
en
P
T
T
a
40
80
an
ce
120
Ambient temperature T
a
(
°C
)
2
/D
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
160
d
pla inc
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ct
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−30%
4.7
kΩ
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
150
MHz
Conditions
Min
−50
−50
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−
0.1
−
0.5
460
µA
µA
V
V
−
0.01
−
0.25
−
0.2
mA
V
CE
= −10
V, I
C
= −5
mA
160
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
−4.9
V
−30%
4.7
80
+30%
kΩ
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
MHz
SJJ00181CED
M
ain
Di
sc te
on na
tin nc
ue e/
d
Collector-emitter saturation voltage
Output voltage high-level
V
CE(sat)
V
OH
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
4.9
isc
on
tin
ue
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04316
Characteristics charts of Tr1
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
160
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
Forward current transfer ratio h
FE
T
a
=
75°C
300
25°C
−25°C
200
Collector current I
C
(mA)
120
10
0.1 mA
10
0
0
2
4
6
8
12
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
1
10
100
ue
0
0.1
Collector-base voltage V
CB
(V)
d
pla inc
Pl
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ct
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cy
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.
−25°C
0.01
0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
80
1
T
a
=
75°C
40
0.2 mA
0.1
25°C
100
0
1
10
100
1
10
100
1 000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
10
4
V
O
=
5 V
T
a
=
25°C
100
V
O
=
0.2 V
T
a
=
25°C
Output current I
O
(µA)
10
2
Input voltage V
IN
(V)
10
3
10
1
10
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
tin
Ma
int
en
an
ce
/D
isc
on
Input voltage V
IN
(V)
Output current I
O
(mA)
SJJ00181CED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04316
Characteristics charts of Tr2
I
C
V
CE
I
B
=
−1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−
0.2 mA
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
T
a
=
75°C
M
ain
Di
sc te
on na
tin nc
ue e/
d
200
−1
25°C
T
a
=
75°C
−40
−
0.1
25°C
−25°C
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
−1
−10
−100
ue
0
−
0.1
Collector-base voltage V
CB
(V)
4
d
pla inc
Pl
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pla m d m es
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d d te te ow
p:/ fo
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co L a d t ty
du
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ct
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an ut
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cy
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.jp rm
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.
−25°C
−1
−10
−100
0
−1
−10
−100
−
0.1 mA
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
4
V
O
=
−5
V
T
a
= 25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
Output current I
O
(
µA
)
Input voltage V
IN
(V)
−10
3
−10
−10
2
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
tin
Ma
int
en
an
ce
/D
isc
on
Input voltage V
IN
(V)
Output current I
O
(mA)
SJJ00181CED
10
°
6
1
SMini6-G1
Ma
int
en
(0.65)
an
ce
2.0
±0.1
1.3
±0.1
/D
5
0.2
±0.05
2
isc
(0.65)
on
tin
4
3
ue
±0.10
(0.425)
±0.1
This product complies with the RoHS Directive (EU 2002/95/EC).
SJJ00181CED
+0.2
−0.1
±0.1
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.12
−0.02
+0.05
Unit: mm
d
pla inc
Pl
0 to 0.1
ea
ne lud
1.25
se
0.9
p
d m es
2.1
vis
0.9
lan mai a fo
htt it
ed nt int llo
p:/ fo
e
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe
5
°
Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
0.2
.
/en at
/ ion
.
XP04316
5
51单片机
