7.5-22.5/15.0-45.0 GHz Active Doubler
QFN, 3x3 mm
April 2006 - Rev 28-Apr-06
X1000-QT
Features
+17 dBm Output Power
-30 dBc Fundamental Leakage
SMD, 3x3 mm QFN Package
RoHS Compliant
100% RF, DC and Output Power Testing
General Description
Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active
doubler delivers + 17 dBm of output power. The
device combines an active doubler with an output
buffer amplifier that delivers constant power over a
range of input powers. The device has excellent
rejection of the fundamental and harmonic products
and requires a single positive bias supply. This device
uses Mimix Broadband's 0.15 GaAs pHEMT device
model technology to ensure high reliability and
uniformity. The device comes in a low-cost 3x3mm
QFN Surface Mount Plastic Package offering excellent
RF and thermal properties and is RoHS compliant. This
device is well suited for Point-to-Point Radio,
Microwave, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Voltage (Vss)
Supply Current (Id)
Supply Current (Iss)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
-6.0 VDC
300 mA
60 mA
+0.3 VDC
+12.0 dBm
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Saturated Output Power (Psat)
RF Input Power (RF Pin)
Fundamental Leakage (fin)
Third Harmonic Leakage (3xfin)
Fourth Harmonic Leakage (4xfin)
Bias Voltage (Vcc)
Supply Current
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id1,2) (Vd=5.0V, Vg1=-0.6V, Vg2=0.0V Typical)
Source Voltage (Vss)
Source Current (Iss)
Units
GHz
GHz
dB
dB
dBm
dBm
dBc
dBc
dBc
VDC
mA
VDC
VDC
VDC
mA
VDC
mA
Min.
7.5
15.0
-
-
-
0.0
-
-
-
-
-
-
-1.2
-1.2
-
-5.5
25
Typ.
-
-
-15
-7
+17
-
-
-
-
+5.0
125
+5.0
-0.6
0.0
220
-5.0
50
Max.
22.5
45.0
-
-
-
+10.0
-30
TBD
TBD
+5.5
140
+5.5
+0.1
+0.1
250
-2.0
60
Page 1 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-22.5/15.0-45.0 GHz Active Doubler
QFN, 3x3 mm
April 2006 - Rev 28-Apr-06
X1000-QT
Doubler Measurements
Pout for P in = 0 to 1 0dBm
1
30
Pout ( F inx1), P in=2dBm
2xFin
20
Pout ( F inx1), P in=4dBm
Pout ( F inx1), P in=6dBm
10
Pout ( F inx1), P in=8dBm
Pout (dBm)
0
Pout ( F inx1), P in=10dBm
Pout ( F inx2), P in=2dBm
-10
Pout ( F inx2), P in=4dBm
Fi n
-20
Pout ( F inx2), P in=6dBm
Pout ( F inx2), P in=8dBm
-30
7
9
11
13
15
17
19
21
23
25
Fin (GH z)
Pout ( F inx2), P in=10dBm
Power Sweep for Fi n = 10G Hz
1
25
20
15
10
5
Pou t (dBm)
0
-5
-10
-15
-20
Pout ( F inx2), F in=10 GHz
Pout ( F inx1), F in=10 GHz
-25
-30
-15
-10
-5
0
Pin (dB m)
5
10
15
1. Measured results taken at room temperature in 40 GHz connectorized test fixture with no de-embedding.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-22.5/15.0-45.0 GHz Active Doubler
QFN, 3x3 mm
April 2006 - Rev 28-Apr-06
X1000-QT
Doubler Measurements (cont.)
Harmonic Products, Pin = +5 dBm (Fin = 6 - 20 GHz)
20
2nd (RF out)
15
10
5
4th
Fund. (5dBm)
2xFin (5dBm)
6th
Fund
-10
5th
-15
-20
-25
-30
5
10
15
20
25
30
35
40
45
3rd
7th
3xFin (5dBm)
4xFin (5dBm)
5xFin (5dBm)
6xFin (5dBm)
7xFin (5dBm)
Pout (dBm)
0
-5
Fout (GHz)
* Measured on-wafer with die version of doubler.
Harmonic Products, Pin = +0 dBm (Fin = 6 - 20 GHz)
20
15
2nd (RF out)
10
5
Fund. (0dBm)
4th
2xFin (0dBm)
3xFin (0dBm)
-5
-10
-15
-20
-25
-30
5
10
15
20
25
30
35
40
45
3rd
5th
7th
Fund
6th
4xFin (0dBm)
5xFin (0dBm)
6xFin (0dBm)
7xFin (0dBm)
Pout (dBm)
0
Fout (GHz)
* Measured on-wafer with die version of doubler.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 7
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-22.5/15.0-45.0 GHz Active Doubler
QFN, 3x3 mm
April 2006 - Rev 28-Apr-06
X1000-QT
Package Dimensions
XX1000-QT
wwwwwww
PxxxxG
Top View
Bottom View
(Note: Engineering designator is 40DBL0458QT)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.5-22.5/15.0-45.0 GHz Active Doubler
QFN, 3x3 mm
April 2006 - Rev 28-Apr-06
X1000-QT
App Note [1] Biasing
-
It is recommended to separately bias each doubler stage with Vd(1,2)=5.0V with Id1=80mA and Id2=140mA
and Vss=-5.0V with Iss=50mA. XX1000-QT provides good performance at reduced bias with Vss=-2.0V and Iss=25mA. Maximum
output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be used at high levels
of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to
maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and Vg2=0.0V.
Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to
ensure negative gate bias is available before applying the positive drain supply.
MTTF Tables (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions:
Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA
Functional Schematic
Pin
3
5
6
7
10
13
15
Description
RF In
Vg1
Vss
Vg2
RF Out
Vd2
Vd1
Top View
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
