SILICON ION-IMPLANTED
HYPERABRUPT TUNER DIODES
ISSUE 2 MARCH 94
ZC820
SERIES
DIODE PIN CONNECTION
1
1
CATHODE
2
ANODE
2
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Reverse Voltage
Forward Current
Power Dissipation at T
amb
=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
I
F
P
tot
T
j
T
stg
MAX
25
200
300
125
-55 to +200
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL MIN
I
R
η
TYP
MAX
0.02
UNIT CONDITIONS
µ
A
0.03
0.04
%/°C
V
R
=3V
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART
NO
MIN
ZC820
ZC821
ZC822
ZC823
ZC824
ZC825
ZC826
8
12
17.6
26.4
37.6
54.4
80
Nominal Capacitance
in pF
@ V
R
=2V, f=1MHz
NOM
10
15
22
33
47
68
100
MAX
12
18
26.4
39.6
56.4
81.6
120
Minimum
Q
@ V
R
=3V
f=50MHz
300
300
200
200
200
100
100
Capacitance Ratio
C
2
/C
20
,
at f=1MHz
MIN
5
5
5
5
5
5
5
MAX
6.5
6.5
6.5
6.5
6.5
6.5
6.5
*Available with 2V nominal capacitance
±
10 suffix A,
±
5% suffix B
3-107
ZC820
SERIES
200
100
Diode Capacitance (pF)
10
826
825
824
823
822
821
820
1
1
10
100
Reverse
Voltage (Volts)
Diode Capacitance
3-108
