NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 APRIL 94
FEATURES
* 15 Volt V
CEO
* f
T
=600 MHz
APPLICATIONS
* VHF/UHF operation
ZTX320 ZTX321
ZTX322 ZTX323
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
tot
T
j
:T
stg
30
15
3
100
500
300
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mA
mW
°C
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter ZTX320, ZTX322
Saturation Voltage ZTX323
ZTX321
Base-Emitter
ZTX320, ZTX322
Saturation Voltage ZTX323
ZTX321
Static Forward
Current Transfer
Ratio
Output Capacitance
Input Capacitance
Transition Frequency at f=100MHz
Noise Figure
Power Gain
ZTX320, ZTX321
ZTX322
ZTX323
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
obo
C
ibo
f
T
N
g
pe
3-159
600
400
6
typical
15
20
20
100
MIN.
30
15
3
0.01
0.2
0.4
0.4
0.4
1.0
1.0
1.0
300
150
300
1.7
1.6
pF
pF
MHz
MHz
dB
dB
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=2V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, I
B
=0.3mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, I
B
=0.3mA
I
C
=3mA, V
CE
=1V
I
C
=3mA, V
CE
=1V
I
C
=3mA, V
CE
=1V
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
I
C
=4mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
E
=1mA, V
CE
=6V
R
S
=400
Ω,
f=60MHz
I
C
=6mA, V
CB
=12V
f=200MHz
V
V
V
V
V
V
ZTX320 ZTX321
ZTX322 ZTX323
TYPICAL CHARACTERISTICS
P
D
- Power Dissipation (Watts)
1000
0.4
800
0.3
f
T
- MHz
600
V
CE
=10V
f=100MHz
0.2
400
200
0.1
0
0
5
10
15
20
25
0
-60
-20
0 20
60
100
140
180
I
C
(mA)
T - Temperature (°C)
f
T
v I
C
Derating Curve
3-160
