N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 0.5Ω
* Spice model available
ZVN4310A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Practical Continuous Drain Current at
T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Practical Power Dissipation at T
amb
=25°C*
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DP
I
DM
V
GS
P
tot
P
totp
T
j
:T
stg
VALUE
100
0.9
1
12
±
20
850
1.13
-55 to +150
UNIT
V
A
A
A
V
mW
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
(1)(2)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
9
0.36
0.48
600
0.5
0.65
100
1
3
20
10
100
TYP.
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
A
Ω
Ω
mS
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
V
DS
=25V,I
D
=3A
g
fs
3-393
ZVN4310A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Input Capacitance (2)
Common Source
Output Capacitance
(2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
SYMBOL MIN.
C
iss
C
oss
TYP.
MAX.
350
140
UNIT
pF
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
CONDITIONS.
C
rss
t
d(on)
t
r
t
d(off)
t
f
30
8
25
30
16
pF
ns
ns
ns
ns
V
DD
≈25V,
V
GEN
=10V, I
D
=3A
R
GS
=50Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
Junction to Case
SYMBOL
R
th(j-amb)
R
th(j-case)
MAX.
150
50
UNIT
°C/W
°C/W
Max Power Dissipation - (Watts)
1.0
Thermal Resistance (°C/W)
150
t
1
D.C.
D=t
1
/t
P
0.75
100
t
P
D=0.6
Am
tt
en
bi
0.50
em
pe
tu
ra
50
D=0.2
D=0.1
0.25
re
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-394
ZVN4310A
TYPICAL CHARACTERISTICS
R
DS(on)
-Drain Source On Resistance
(Ω)
V
GS=
20V 10V
12V 9V 8V
V
GS
=3V
10
4V
5V 6V 8V10V
7V
I
D
- Drain Current (Amps)
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
6V
1.0
5V
4V
3V
5
6
7
8
9
10
0.1
0.1
1
10
100
V
DS
- Drain Source
Voltage (Volts)
I
D-
Drain Current
(Amps)
Saturation Characteristics
On-resistance v drain current
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
5
g
fs
-Transconductance (S)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
0
n-
ai
Dr
Gate
Thre
e
rc
ou
S
s
Re
is
e
nc
ta
R
n)
(o
DS
V
GS=
10V
I
D=
3.3A
4
3
2
1
0
0
2
4
6
8
10
V
DS=
10V
shold
Volta
ge V
V
GS=
V
DS
I
D=
1mA
GS(TH
)
25 50 75 100 125 150 175 200 225
12
14
16
18
20
T
j
-Junction Temperature (°C)
I
D(on)
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Transconductance v drain current
16
V
GS
-Gate Source Voltage (Volts)
500
14
12
10
8
6
4
2
0
0
1
I
D=
3A
C-Capacitance (pF)
400
300
200
100
0
C
oss
C
rss
50
C
iss
V
DD
=
10V
20V
50V
100V
0
10
20
30
40
2
3
4
5
6
7
8
9
10 11 12
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-395
