ZVP4525E6
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525E6
SOT23-6 package
SOT23-6
APPLICATIONS
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
Top View
ORDERING INFORMATION
DEVICE
ZVP4525TA
ZVP4525TC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
•
P52
ISSUE 1 - MARCH 2001
1
ZVP4525E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=10V; TA=25°C)(a)
(V
GS
=10V; TA=70°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
D
I
DM
I
S
I
SM
P
D
T
j
:
T
stg
LIMIT
-250
±40
-197
-157
-1
-0.75
-1
1.1
8.8
-55 to +150
UNIT
V
V
mA
mA
A
A
A
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θ
JA
R
θ
JA
VALUE
113
68
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2
ZVP4525E6
CHARACTERISTICS
ISSUE 1 - MARCH 2001
3
ZVP4525E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
205
21
0.97
290
29
V
ns
nC
T
j
=25°C, I
S
=-200mA,
V
GS
=0V
T
j
=25°C, I
F
=-200mA,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
1.53
3.78
17.5
7.85
2.45
.22
.45
3.45
.31
.63
ns
ns
ns
ns
nC
nC
nC
V
DS
=-25V,V
GS
=-10V,
I
D
=-200mA(refer to
test circuit)
V
DD
=-30V, I
D
=-200mA
R
G
=50Ω, V
GS
=-10V
(refer to test circuit)
C
iss
C
oss
C
rss
73
12.8
3.91
pF
pF
pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
80
-0.8
-250
-285
-30
±1
-1.5
10
13
200
-500
±100
-2.0
14
18
V
nA
nA
V
Ω
Ω
mS
I
D
=-1mA, V
GS
=0V
V
DS
=-250V, V
GS
=0V
V
GS
=±40V, V
DS
=0V
I =-1mA, V
DS
= V
GS
D
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
V
GS
=-10V, I
D
=-200mA
V
GS
=-3.5V, I
D
=-100mA
V
DS
=-10V,I
D
=-0.15A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001
4
ZVP4525E6
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2001
5
模拟电子
