A Product Line of
Diodes Incorporated
ZXGD3006E6
40V 10A GATE DRIVER IN SOT26
Description
ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC
MOSFETs. It can transfer up to 10A peak source/sink current into the
gate for effective charging and discharging of a large capacitive load.
The ZXGD3006E6 can drive typically 4A into the low gate impedance
of an IGBT, with just 1mA input from a controller. Also, the turn-on
and turn-off switching behavior of the IGBT can be individually tailored
to suit an application.
be reduced.
In particular, by defining the switching
characteristics appropriately, EMI and cross conduction problems can
Features
High-gain buffer with typically 4A output from 1mA input
40V supply for +20V to -18V gate driving to prevent dV/dt
induced false triggering
Emitter-follower that is rugged to latch-up / shoot-through
issues, and delivers <10ns propagation delay time
Separate source and sink outputs for independent control of
IGBT turn-on and turn-off times
Optimized pin-out to simplify PCB layout and reduce parasitic
trace inductances
Near-zero quiescent supply current
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Applications
Gate driving IGBTs and SiC MOSFETs in:
DC-DC Converters in Electric Cars
Automotive Active Suspension Systems
Solar Inverters
Power Supplies
Plasma Display Panel Power Modules
Mechanical Data
Case: SOT26
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.018 grams (approximate)
Pin Name
V
CC
IN
V
EE
Source
Do Not Connect
Sink
SOT26
Pin Function
Supply Voltage High
Driver Input Pin
Supply Voltage Low
Source Current Output
Sink Current Output
V
CC
IN
V
EE
SOURCE
SINK
Top View
Internal Device
Schematic
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
ZXGD3006E6TA
ZXGD3006E6QTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
3006
3006
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3006
3006 = Product Type Marking Code
ZXGD3006E6
Document Number DS35229
Rev. 4 - 2
1 of 8
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3006E6
Typical Application Circuit
V
S
V
CC
V
CC
+ supply
Controller
SOURCE R
SOURCE
IN
ZXGD3006
IGBT
(or SiC MOSFET)
SINK
R
SINK
V
EE
V
EE
- supply
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Supply voltage, with respect to V
EE
Input voltage, with respect to V
EE
Output difference voltage (Source – Sink)
Peak output current
Input current
Symbol
V
CC
V
IN
V
(source-sink)
I
PK
I
IN
Value
40
40
±7.5
±10
±100
Unit
V
V
V
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Notes 6 & 7)
Linear derating factor
Thermal Resistance, Junction to Ambient (Notes 6 & 7)
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1.1
8.8
113
105
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge – Charged Device Model
Notes:
Symbol
ESD HBM
ESD CDM
Value
≥
1,500
≥
1,000
Unit
V
V
JEDEC Class
1C
IV
6. For a device mounted on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst
operating in a steady-state. The heatsink is split in half with the pin 1 (V
CC
) and pin 3 (V
EE
) connected separately to each half.
7. For device with two active die running at equal power.
8. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V
CC
) and pin 3 (V
EE
).
9. Refer to JEDEC specification JESD22-A114 and JESD22-C101.
ZXGD3006E6
Document Number DS35229
Rev. 4 - 2
2 of 8
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3006E6
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Output voltage, high
Output voltage, low
Supply breakdown voltage
Quiescent supply current
Source current
Sink current
Symbol
V
OUT(hi)
V
OUT(low)
BV
CC
I
Q
I
(source)
I
(sink)
Min
V
CC
- 1.0
—
40
40
—
—
—
—
Typ
V
CC
- 0.8
V
EE
+ 0.12
—
—
—
—
4.0
3.8
6.4
5.5
3.9
2.2
0.44
7.7
6.5
4.4
2.3
0.46
8
48
16
35
46
419
47
467
27
208
11
53
Max
—
V
EE
+ 0.3
—
—
50
50
—
—
Unit
V
V
nA
A
V
IN
= V
CC
V
IN
= V
EE
Test Condition
C
L
= 1nF
R
SOURCE
= 0Ω, R
SINK
= 0Ω
I
Q
= 100A, V
IN
= V
CC
I
Q
= 100A, V
IN
= V
EE
= 0V
V
CC
= 30V, V
IN
= V
CC
V
CC
= 30V, V
IN
= V
EE
= 0V
V
CC
= 5V, I
IN
= 1mA, V
OUT
= 0V
V
CC
= 5V, I
IN
=-1mA, V
OUT
= 5V
R
IN
= 200Ω
R
IN
= 1kΩ
R
IN
= 10kΩ
R
IN
= 100kΩ
R
IN
= 1000kΩ
R
IN
= 200Ω
R
IN
= 1kΩ
R
IN
= 10kΩ
R
IN
= 100kΩ
R
IN
= 1000kΩ
V
CC
= 15V, V
EE
= 0V
V
IN
= 15V
C
L
= 100nF, R
L
= 0.18Ω
R
SOURCE
= 0Ω, R
SINK
= 0Ω
V
CC
= 15V, V
EE
= 0V
V
IN
= 15V
C
L
= 100nF, R
L
= 0.18Ω
R
SOURCE
= 0Ω, R
SINK
= 0Ω
Source current
with varying input resistances
I
(source)
—
—
A
Sink current
with varying input resistances
I
(sink)
—
—
A
Switching times
with low load capacitance C
L
= 10nF
t
d(rise)
t
r
t
d(fall)
t
f
t
d(rise)
t
r
t
d(fall)
t
f
t
d(rise)
t
r
t
d(fall)
t
f
—
—
ns
V
CC
= 15V, V
EE
= 0V
V
IN
= 0 to 15V
R
IN
= 1kΩ
C
L
= 10nF, R
L
= 0.18Ω
R
SOURCE
= 0
Ω,
R
SINK
= 0
Ω
V
CC
= 15V, V
EE
= 0V
V
IN
= 0 to15V
R
IN
= 1kΩ
C
L
= 100nF, R
L
= 0.18Ω
R
SOURCE
= 0Ω, R
SINK
= 0Ω
V
CC
= 20V, V
EE
= -18V
V
IN
= -18 to 20V
R
IN
= 1kΩ
C
L
= 10nF, R
L
= 0.18Ω
R
SOURCE
= 4.7Ω, R
SINK
= 0Ω
Switching times
with high load capacitance C
L
= 100nF
—
—
ns
Switching times
with asymmetric source and sink resistors
—
—
ns
Switching Test Circuit and Timing Diagram
V
CC
V
IN
50Ω
R
IN
IN
V
CC
SOURCE
R
SOURCE
90%
V
OUT
V
IN
10%
ZXGD3006
SINK
R
SINK
C
L
t
d(rise)
90%
R
L
t
d(fall)
90%
V
50Ω
V
EE
V
OUT
10%
10%
t
r
t
f
ZXGD3006E6
Document Number DS35229
Rev. 4 - 2
3 of 8
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3006E6
Typical Switching Characteristics
(@T
A
= +25°C, unless otherwise specified.)
15
V
IN
= 0 to 15V
V
CC
= 15V
V
EE
= 0V
15
V
IN
= 0 to 15V
V
CC
= 15V
V
EE
= 0V
R
IN
= 1k
C
L
= 100nF
Voltage (V)
Voltage (V)
10
V
OUT
R
IN
= 1k
C
L
= 10nF
R
L
= 0.18
R
SOURCE
= 0
R
SINK
= 0
10
V
OUT
R
L
= 0.18
R
SOURCE
= 0
R
SINK
= 0
5
V
IN
5
V
IN
0
0
100 200 300 400 500 600 700 800
0
Time (ns)
0.0
0.5
1.0
Time (
s)
1.5
2.0
2.5
3.0
3.5
Switching Speed
Low Load Capacitance CL = 10nF
10
15
V
CC
= 20V
V
EE
= -18V
R
IN
= 1k
C
L
= 10nF
R
L
= 0.18
R
SOURCE
= 4.7
Switching Speed
High Load Capacitance CL = 100nF
Supply Current (A)
20
V
IN
= -18 to 20V
V
IN
= 0 to 15V
1
0.1
0.01
1E-3
1E-4
V
CC
= 15V
V
EE
= 0V
Square Wave
C
L
= 100nF
Voltage (V)
10
5
0
-5
-10
-15
-20
0.0
0.2
V
IN
V
OUT
C
L
= 1
F
C
L
= 1nF
C
L
= 10nF
R
SINK
= 0
0.4
0.6
0.8
1.0
1.2
10
100
Time (
s)
Frequency (Hz)
1k
10k
100k
1M
Switching Speed
Asymmetric Source and Sink Resistors
Supply Current
ZXGD3006E6
Document Number DS35229
Rev. 4 - 2
4 of 8
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3006E6
Typical Switching Characteristics
(@T
A
= +25°C, unless otherwise specified.)
10
10
Peak Source Current (A)
1
C
L
=1uF
C
L
=100nF
Peak Sink Current (A)
1
C
L
=1uF
C
L
=100nF
0.1
V
IN
= 15V
V
CC
= 15V
V
EE
= 0V
R
L
= 0.18
C
L
=10nF
0.1
V
IN
= 15V
V
CC
= 15V
V
EE
= 0V
R
L
= 0.18
C
L
=10nF
0.01
1k
10k
100k
1M
C
L
=1nF
0.01
1k
10k
100k
1M
C
L
=1nF
10M
10M
Source Current vs. Input Resistance
R
IN
=1M
R
IN
=100k
R
IN
Input Resistance (
)
Sink Current vs. Input Resistance
R
IN
=1M
R
IN
=100k
R
IN
Input Resistance (
)
1000
1000
t
d(rise)
(ns)
100
V
IN
= 15V
V
IN
= 15V
V
CC
= 15V
V = 15V
V
EE
= 0V
V
EE
= 0V
R
L
= 0.18
R = 0.18
L
CC
t
d(fall)
(ns)
100
10
R
IN
=200
R
IN
=1k
R
IN
=10k
10
R
IN
=200
R
IN
=1k
R
IN
=10k
V
IN
= 15V
V
CC
= 15V
V
EE
= 0V
R
L
= 0.18
1
1
10
100
1k
1
1
10
100
1k
C
L
Load Capacitance (nF)
Turn-On Delay Time
C
L
Load Capacitance (nF)
Turn-Off Delay Time
10000
1000
R
IN
=1M
R
IN
=100k
10000
1000
R
IN
=1M
R
IN
=100k
t
r
(ns)
100
10
1
R
IN
=10k
R
IN
=1k
t
f
(ns)
V
IN
= 15V
V
CC
= 15V
V
EE
= 0V
R
L
= 0.18
100
R
IN
=10k
R
IN
=1k
V
IN
= 15V
V
CC
= 15V
V
EE
= 0V
R
L
= 0.18
R
IN
=200
10
1k
1
R
IN
=200
10
100
10
100
1k
C
L
Load Capacitance (nF)
C
L
Load Capacitance (nF)
Turn-On Rise Time
Turn-Off Fall Time
ZXGD3006E6
Document Number DS35229
Rev. 4 - 2
5 of 8
www.diodes.com
June 2013
© Diodes Incorporated
