ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.60
;
I
D
=-0.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
SOT23
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM61P02FTA
ZXM61P02FTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
Top View
3000 units
10000 units
DEVICE MARKING
•
P02
ISSUE 1 - JUNE 2004
1
ZXM61P02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)
(V
GS
=4.5V; T
A
=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
LIMIT
-20
±
12
-0.9
-0.7
-4.9
-0.9
-4.9
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
2
ZXM61P02F
CHARACTERISTICS
Max Power Dissipation (Watts)
10
Refer Note (a)
1.0
0.8
Refer Note (b)
Refer Note (a)
-I
D
- Drain Current (A)
1
0.6
0.4
0.2
0
100m
DC
1s
100ms
10ms
1ms
10m
0.1
1
10
100
0
20
40
60
80
100
120
140
160
-V
DS
- Drain-Source Voltage (V)
T - Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
Refer Note (b)
Thermal Resistance (°C/W)
180
160
140
120
100
80
60
40
20
D=0.2
D=0.1
D=0.05
Single Pulse
D=0.5
240
Refer Note (b)
200
160
120
D=0.5
80
40
D=0.2
D=0.1
D=0.05
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
0
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
3
ZXM61P02F
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
14.9
5.6
-0.95
V
ns
nC
T
j
=25°C, I
S
=-0.61A,
V
GS
=0V
T
j
=25°C, I
F
=-0.61A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.9
6.7
11.2
10.1
3.5
0.5
1.5
ns
ns
ns
ns
nC
nC
nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-0.61A
(Refer to test circuit)
V
DD
=-10V, I
D
=-0.93A
R
G
=6.2Ω, R
D
=11Ω
(Refer to test circuit)
C
iss
C
oss
C
rss
150
70
30
pF
pF
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
0.56
-0.7
0.6
0.9
-20
-1
±100
V
µA
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
GS
=± 12V, V
DS
=0V
I
D
=-250µA, V
DS
= V
GS
V
GS
=-4.5V, I
D
=-0.61A
V
GS
=-2.7V, I
D
=-0.31A
V
DS
=-10V,I
D
=-0.31A
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
ZXM61P02F
TYPICAL CHARACTERISTICS
10
+25°C
10
4.5V
5V
4V
-VGS
3.5V
3V
2.5V
+150°C
5V
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
4.5V 4V
-VGS
3.5V
3V
2.5V
1
2V
1
2V
100m
0.1
1
10
100
100m
0.1
10
100
-V
DS
- Drain-Source Voltage (V)
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1.7
Normalised R
DS(on)
and V
GS(th)
-ID - Drain Current (A)
T=+150°C
T=+25°C
1.5
1.3
1.1
0.9
0.7
0.5
-100
RDS(on)
VGS=-4.5V
ID=-0.61A
1
100m
VGS=VDS
ID=-250uA
VGS(th)
VDS=-10V
10m
1.5
2.5
3.5
4.5
0
+100
+200
-VGS - Gate-Source Voltage (V)
T
j
- Junction Temperature (°C)
Typical Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
- Reverse Drain Current (A)
10
R
DS(on)
- Drain-Source On-Resistance (Ω)
10
Vg=-2.5V
Vg=-4.5V
1
1
100m
T=+150°C
T=+25°C
100m
0.1
1
10
10m
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-I
D
- Drain Current (A)
-V
SD
- Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
6
