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ZXTN2011G_16

100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

厂商名称：Diodes

厂商官网：http://www.diodes.com/

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Green
ZXTN2011G
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BV
CEO
> 100V
I
C
= 6A Continuous Collector Current
I
CM
= 10A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< 65mV max @ 1A
R
SAT
= 36mΩ @ I
c
=6A for Low Equivalent On-Resistance
h
FE
Specified up to 10A for High Gain Hold Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Line Switching
Motor Driving (including DC fans)
High Side Switches
Subscriber Line Interface Cards (SLIC)
SOT223
Top View
Device Schematic
Pin-Out Top View
Ordering Information
(Note 4)
Part Number
ZXTN2011GTA
Notes:
Marking
ZXTN2011
Reel Size (inches)
7
Tape Width (mm)
12
Quantity Per Reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXTN
2011
YWW
ZXTN 2011 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
1 of 7
www.diodes.com
January 2016
© Diodes Incorporated
ZXTN2011G
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
200
100
7
6
10
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
JA
R
JA
R
JL
T
J,
T
STG
Symbol
Value
3.0
24
1.6
12.8
42
78
8.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated
ZXTN2011G
Thermal Characteristics and Derating Information
Limit
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(sat)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120 140 160
See note (6)
See note (5)
1
DC
1s
100ms
10ms
Single Pulse. T
amb
=25°C
1ms
100µs
100m
10m
100m
See note (5)
1
10
100
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
See note (5)
Max Power Dissipation (W)
40
30
Single Pulse. T
amb
=25°C
100
See note (5)
D=0.5
20
D=0.2
Single Pulse
D=0.05
10
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
3 of 7
www.diodes.com
January 2016
© Diodes Incorporated
ZXTN2011G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R≤1kΩ
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Min
200
200
100
7
—
—
—
—
—
—
—
—
—
—
—
—
100
100
30
10
—
—
—
—
Typ
235
235
115
8.1
—
—
—
—
—
21
50
95
190
1.02
0.92
230
200
60
20
130
26
41
1,010
Max
—
—
—
—
50
0.5
100
0.5
10
35
65
125
220
1.12
1
—
300
—
—
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
I
EBO
Test Condition
I
C
= 100µA
I
C
= 1µA, RB ≤ 1kΩ
I
C
= 10mA
I
E
= 100µA
V
CB
= 150V
V
CB
= 150V, T
A
= +100°C
V
CB
= 150V
V
CB
= 150V, T
A
= +100°C
V
EB
= 6V
I
C
= 0.1A, I
B
= 5mA
I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 100mA
I
C
= 5A, I
B
= 500mA
I
C
= 5A, I
B
= 500mA
I
C
= 5A, V
CE
= 2V
I
C
= 10mA, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 10A, V
CE
= 2V
V
CE
= 10V, I
C
= 100mA,
f = 50MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V, I
C
= 1A,
I
B1
= -I
B2
= 100mA
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
mV
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
DC Current Gain (Note 9)
V
BE(sat)
V
BE(on)
h
FE
V
V
Transition Frequency
Output Capacitance (Note 9)
Switching Times
Note:
f
T
C
obo
t
ON
t
OFF
MHz
pF
ns
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated
ZXTN2011G
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.6
0.5
I
C
/I
B
=10
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=50
I
C
/I
B
=20
0.4
100°C
100m
0.3
25°C
0.2
0.1
-55°C
I
C
/I
B
=10
10m
1m
10m
100m
1
10
0.0
1m
10m
100m
1
10
I
C
Collector Current (A)
V
CE(SAT)
v I
C
I
C
Collector Current (A)
V
CE(SAT)
v I
C
250
1.2
V
CE
=2V
1.4
I
C
/I
B
=10
Typical Gain (h
FE
)
100°C
200
150
100
Normalised Gain
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
1.2
V
BE(SAT)
(V)
1.0
0.8
0.6
100°C
-55°C
25°C
50
0
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
h
FE
v I
C
I
C
Collector Current (A)
V
BE(SAT)
v I
C
1.4
1.2
V
CE
=2V
V
BE(ON)
(V)
1.0
0.8
0.6
0.4
-55°C
25°C
100°C
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN2011G
Document number: DS33662 Rev. 3 - 2
5 of 7
www.diodes.com
January 2016
© Diodes Incorporated
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