Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
NXP(恩智浦)
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,12A I(D),TO-220AB
Motorola ( NXP )
POWER FIELD EFFECT TRANSISTOR
Texas Instruments(德州仪器)
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Motorola ( NXP )
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Motorola ( NXP )
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Motorola ( NXP )
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Motorola ( NXP )
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
NXP(恩智浦)
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-220AB
Motorola ( NXP )
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
ON Semiconductor(安森美)
12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN
NXP(恩智浦)
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-220AB
NXP(恩智浦)
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,12A I(D),TO-220AB
Motorola ( NXP )
12A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
New Jersey Semiconductor
Power Field Effect Transistor
Motorola ( NXP )
12A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
NXP(恩智浦)
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,12A I(D),TO-220AB
