镁光闪存规格书，详细介绍了MT29F256G08EBHAF闪存芯片的技术规格

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Micron Confidential and Proprietary Advance TLC 256Gb1Tb NAND Features NAND Flash Memory FortisFlash MT29F256G08EBHAF MT29F512G08EEHAF MT29F1T08EMHAF Data strobe DQS signals provide a hardware meth od for synchronizing data DQ in the NVDDR2NV DDR3 interface Copyback operations supported within the plane from which data is read Ondie Termination ODT 5 Quality and reliability6 Testing methodology JESD47 Data retention See qualification report May vary for targeted application Endurance 15......