The FM24CL04 is a 4-kilobit nonvolatile memoryemploying an advanced ferroelectric process. Aferroelectric random access memory or FRAM isnonvolatile and performs reads and writes like aRAM. It provides reliable data retention for 45 yearswhile eliminating the complexities, overhead, andsystem level reliability problems caused by EEPROMand other nonvolatile memories.Unlike serial EEPROMs, the FM24CL04 performswrite operations at bus speed. No write delays areincurred. Data is written to the memory array in thecycle after it has been successfully transferred to thedevice. The next bus cycle may commenceimmediately.These capabilities make the FM24CL04 ideal fornonvolatile memory applications requiring frequentor rapid writes. Examples range from data collectionwhere the number of write cycles may be critical, todemanding industrial controls where the long writetime of EEPROM can cause data loss. Thecombination of features allows more frequent datawriting with less overhead for the system.The FM24CL04 provides substantial benefits to usersof serial EEPROM, yet these benefits are available ina hardware drop-in replacement. The FM24CL04 isavailable in an industry standard 8-pin package usinga two-wire protocol. The specifications areguaranteed over an industrial temperature range of-40°C to +85°C.