采用溅射技术, 对薄膜沉积的相关工艺参数进行了优化, 获得了电阻温度系数TCR≤±10×10- 6ö℃的锰铜薄膜。该项技术为锰铜传感器的薄膜化奠定了基础, 同时也可用于制作锰铜薄膜精密电阻器。关键词　锰铜　薄膜　电阻温度系数　溅射Abstract　M anganin th in film s were p repared by sput tering. The TCR s of the film s were decreased to 10× 10- 6ö℃ using op t im ized depo sit ion parameters. Th is technique can be app lied to manganin th in film gauges and th in film p recision resisto rs.Key words　M anganin　Th in film　Temperature coefficient of resistance　Sput tering