De scrip tionHCT802 offers an N-Channel and PChannelMOS transistor in a hermeticceramic surface mount package. Thedevices used are similar to industrystandards 2N6661 N-Channel deviceand VP1008 P-Channel device. Thesetwo enhancement mode MOSFETSare particularly well matched for VDS,IDS(on), RDS(on) and Gfs.Order HCT802TX for processing perMIL-PRF-19500. Typical screeningand lot acceptance tests are providedon page 13-4. TX products receive aVGS HTRB at 16 V for 48 hrs. at 150oC and a VDS HTRB at 72 V for 160 hrs.at 150o C.
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