A Sn-doped (100) β-Ga2O3 epitaxial layer was

grown via metal–organic vapor phase epitaxy onto a singlecrystal,

Mg-doped semi-insulating (100) β-Ga2O3 substrate.

Ga2O3-based metal–oxide–semiconductor field-effect transistors

with a 2-μm gate length (LG), 3.4-μm source–drain

spacing (LSD), and 0.6-μm gate–drain spacing (LGD) were

fabricated and characterized. Devices were observed to hold

a gate-to-drain voltage of 230 V in the OFF-state. The gateto-

drain electric field corresponds to 3.8 MV/cm, which is the

highest reported for any transistor and surpassing bulk GaN

and SiC theoretical limits.

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902 IEEE ELECTRON DEVICE LETTERS VOL 37 NO 7 JULY 2016 38MVcm Breakdown Strength of MOVPEGrown SnDoped Ga2O3 MOSFETs Andrew J Green Kelson D Chabak Eric R Heller Senior Member IEEE Robert C Fitch Jr Member IEEE Michele Baldini Andreas Fiedler Klaus Irmscher Gnter Wagner Zbigniew Galazka Stephen E Tetlak Antonio Crespo Kevin Leedy and Gregg H Jessen Senior Member IEEE Abstract A Sndoped 100 Ga2O3 epitaxial layer was grown via metalorganic vapor phase epitaxy onto a single crystal Mgdoped semiinsu......