高速MOSFET栅极驱动电路设计指南 ABSTRACT

The main purpose of this paper is to demonstrate a systematic approach to design high performance

gate drive circuits for high speed switching applications. It is an informative collection of topics offering

a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to

power electronics engineers at all levels of experience.

The most popular circuit solutions and their performance are analyzed, including the effect of parasitic

components, transient and extreme operating conditions. The discussion builds from simple to more

complex problems starting with an overview of MOSFET technology and switching operation. Design

procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated

solutions are described in great details. A special chapter deals with the gate drive requirements of the

MOSFETs in synchronous rectifier applications.

Several, step-by-step numerical design examples complement the paper.