A High-Q Broad-Band Active Inductor

This paper demonstrates a high-Q broad-band active
inductor and its application to a low-loss analog phase shifter. The
proposed high-Q broad-band active inductor utilizes frequencyinsensitive
negative resistance to compensate constant internal
losses caused by the drain-to-source conductance of the fieldeffect
transistors (FET's), the dc bias circuit, and several other
factors. The measured frequency range of the fabricated In-
AlAsnnGaAsRnP HEMT active inductor is 6 to 20 GHz for Q
values greater than 100, and 7 to 15 GHz for Q values greater
than 1000. A low-loss analog phase shifter is also fabricated at Cband.
This is constructed with the active inductors, the varactor
diodes and the low-loss multilayer broad-side coupler in a MIC
structure. Since the constant negative resistance of the active
inductors also compensates the line loss of the coupler and the
varactor diodes' series resistance, the measured results show a
good insertion loss performance with a large phase shift. A phase
shift of more than 225" within a 0.8 dB insertion loss from 4.7 to
6.7 GHz, another of more than 180" within 1.3 dB insertion loss
from 3.7 to 8.5 GHz, and one more of more than 90" within 1.4
dB insertion loss from 3.5 to 10.6 GHz were obtained.

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