2ED2106 (4) S06F (J)
2ED2106 (4) S06F (J)
650 V high-side and low-side gate driver with integrated bootstrap diode
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
Negative VS transient immunity of 100 V
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
Logic operational up to
–11
V on VS Pin
Negative voltage tolerance on inputs of
–5
V
Independent under voltage lockout for both channels
Schmitt trigger inputs with hysteresis
3.3 V, 5 V and 15 V input logic compatible
Maximum supply voltage of 25 V
Dual package options of DSO-8 and DSO-14
High and low voltage pins separated for maximum creepage and
clearance (2ED21064S06J version)
Separate logic and power ground with the 2ED21064S06J version
RoHS compliant
Product summary
V
S_OFFSET
= 650 V max
I
o+pk
/ I
o-pk
(typ.) = + 0.29 A/ - 0.7 A
V
CC
= 10 V to 20 V
Delay matching = 35 ns max.
Propogation delay = 200 ns
t
ON
/ t
OFF
(typ.) = 200 ns/ 200 ns
Packages
DSO-8
DSO-14
Potential applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.
Typical Infineon recommendations are as below:
•
Motor drives, general purpose inverters having TRENCHSTOP™
IGBT6
or 600 V EasyPACK™ modules or its
equivalent power stages
•
Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or
TRENCHSTOP™ family IGBTs or their equivalent power stages
•
Battery operated small home appliances such as power tools, vaccum cleaners using
low voltage OptiMOS™
MOSFETs or their equivalent power stages
•
Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having
high voltage CoolMOS™ super junction MOSFETs or
TRENCHSTOP™
H3 and WR5 IGBT series
or their equivalent
•
High power LED and HID lighting having
CoolMOS™ super junction MOSFETs
•
Electric vehicle (EV) charging stations and battery management systems
•
Driving 650 V SiC MOSFETs in above applications
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Ordering information
Base part number
2ED2106S06F
2ED21064S06J
Package type
DSO - 8
DSO - 14
Standard pack
Form
Quantity
Tape and Reel
2500
Tape and Reel
2500
Orderable part number
2ED2106S06FXUMA1
2ED21064S06JXUMA1
Datasheet
www.infineon.com/soi
Please read the Important Notice and Warnings at the end of this document
Page 1 of 24
V 2.31
2021-10-11
2ED2106 (4) S06F (J)
650 V high-side and low-side gate driver with integrated bootstrap diode
Description
Description
The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and
low side referenced output channels. Based on
Infineon’s
SOI-technology there is an excellent ruggedness and
noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (
V
CC
=
15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no
parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power
MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
Refer to lead assignments for
correct pin configuration. This
diagram shows electrical
connections only. Please refer to
our application notes and design
tips for proper circuit board
layout.
*Bootstrap diode is monolithically integrated
Figure 1
Typical application block diagram
Summary of feature comparison of the 2ED210x family:
Table 1
Part No.
2ED2106S06F
2ED21064S06J
2ED2108S06F
2ED21084S06J
2ED2109S06F
2ED21094S06J
2ED21091S06F
IN,
SD
IN, DT/SD
Yes
Yes
HIN,
LIN
Yes
Input
logic
HIN, LIN
Cross
conduction
prevention
logic
No
Deadtime
Ground pins
COM
VSS / COM
COM
VSS / COM
COM
VSS / COM
COM
740 ns /
200 ns
200 ns /
200 ns
t
ON
/ t
OFF
Package
DSO - 8
DSO - 14
DSO - 8
DSO - 14
DSO - 8
DSO - 14
DSO
–
8
None
Internal 540 ns
Programmable
540 ns - 5000 ns
Internal 540 ns
Programmable
540 ns - 5000 ns
Programmable
540 ns - 2700 ns
Datasheet
www.infineon.com/soi
2 of 24
V 2.31
2021-10-11
2ED2106 (4) S06F (J)
650 V high-side and low-side gate driver with integrated bootstrap diode
1
1
2
3
3.1
3.2
4
4.1
4.2
4.3
4.4
Table of contents
Table of contents ................................................................................................................... 3
Block diagram........................................................................................................................ 4
Pin configuration and functionality .......................................................................................... 5
Pin configuration ..................................................................................................................................... 5
Pin functionality ...................................................................................................................................... 5
Electrical parameters ............................................................................................................. 6
Absolute maximum ratings ..................................................................................................................... 6
Recommended operating conditions..................................................................................................... 6
Static electrical characteristics ............................................................................................................... 7
Dynamic electrical characteristics .......................................................................................................... 8
5
Application information and additional details .......................................................................... 9
5.1
IGBT / MOSFET gate drive ....................................................................................................................... 9
5.2
Switching and timing relationships ........................................................................................................ 9
5.3
Matched propagation delays ................................................................................................................ 10
5.4
Input logic compatibility ....................................................................................................................... 10
5.5
Undervoltage lockout ........................................................................................................................... 11
5.6
Bootstrap diode..................................................................................................................................... 11
5.7
Calculating the bootstrap capacitance C
BS
.......................................................................................... 12
5.8
Tolerant to negative tranisents on input pins ...................................................................................... 13
5.9
Negative voltage transient tolerance of VS pin .................................................................................... 14
5.10
NTSOA
–
Negative Transient Safe Operating Area ............................................................................... 15
5.11
Higher headroom for input to output signal transmission with logic operation upto -11 V .............. 16
5.12
Maximum switching frequency ............................................................................................................. 17
5.13
PCB layout tips ...................................................................................................................................... 18
6
7
8
9
Qualification information....................................................................................................... 19
Related products................................................................................................................... 19
Package details ..................................................................................................................... 20
Part marking information ...................................................................................................... 21
10
Additional documentation and resources................................................................................. 22
10.1
Infineon online forum resources .......................................................................................................... 22
11
Revision history .................................................................................................................... 23
Datasheet
www.infineon.com/soi
3 of 24
V 2.31
2021-10-11
2ED2106 (4) S06F (J)
650 V high-side and low-side gate driver with integrated bootstrap diode
2
Block diagram
8
UV
DETECT
R
Pulse
Filter
VB
2ED2106S06F
R
S
Q
7
HO
6
VS
HIN
2
VCC
Pulse
Generator
VCC UV
DETECT
BS diode
1
VCC
LIN
3
Delay
Match
VSS/COM
LEVEL
SHIFT
5
LO
4
COM
13
VB
2ED21064S06J
Pulse
Filter
UV
DETECT
R
R
S
Q
12
HO
11
VS
HIN
2
Pulse
Generator
VCC
BS diode
VCC UV
DETECT
1
VCC
LIN
3
Delay
Match
VSS/COM
LEVEL
SHIFT
7
LO
6
COM
VSS
5
Figure 2
Block diagrams
Datasheet
www.infineon.com/soi
4 of 24
V 2.31
2021-10-11
2ED2106 (4) S06F (J)
650 V high-side and low-side gate driver with integrated bootstrap diode
3
3.1
Pin configuration and functionality
Pin configuration
1
VCC
HIN
LIN
V
B
HO
V
S
VSS
COM
LO
14
13
12
11
10
1
VCC
VB
HO
VS
8
2
3
2
3
HIN
LIN
COM
7
4
6
5
4
LO
5
6
7
9
8
8 - Lead DSO - 8 (150 mil)
2ED2106S06F
Figure 3
2ED2106(4)S06F(J) pin assignments (top view)
14 - Lead DSO -14 (150 mil)
2ED21064S06J
3.2
Table 2
Pin functionality
Symbol
VCC
HIN
LIN
VSS
COM
LO
VS
HO
VB
Description
Low-side and logic supply voltage
Logic input for high-side gate driver output (HO), in phase. Schmitt trigger inputs
with hysteresis and pull down
Logic input for low-side gate driver output (LO), in phase. Schmitt trigger inputs
with hysteresis and pull down
Logic ground ( 2ED21064S06J only)
Low-side gate drive return
Low-side driver output
High voltage floating supply return
High-side driver output
High-side gate drive floating supply
Datasheet
www.infineon.com/soi
5 of 24
V 2.31
2021-10-11
