MCP14A0901/2
9.0A MOSFET Driver with Low Threshold Input and Enable
Features
• High Peak Output Current: 9.0A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 10,000 pF in 24 ns (typical)
• Short Delay Times: 27 ns (t
D1
), 27 ns (t
D2
) (typical)
• Low Supply Current: 360 µA (typical)
• Low-Voltage Threshold Input and Enable with
Hysteresis
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2 x 3 TDFN
General Description
The MCP14A0901/2 devices are high-speed MOSFET
drivers that are capable of providing up to 9.0A of peak
current while operating from a single 4.5V to 18V
supply. There are two output configurations available;
inverting
(MCP14A0901)
and
noninverting
(MCP14A0902). These devices feature low shoot-
through current, fast rise and fall times, and matched
propagation delays which make them ideal for high
switching frequency applications.
The MCP14A0901/2 family of devices offers enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0901/2 low, regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 2 kV (HBM) and
200V (MM).
Applications
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
Package Types
MCP14A0901/MCP14A0902
MSOP/SOIC
V
DD
1
IN 2
EN 3
GND 4
8 V
DD
7 OUT/OUT
6 OUT/OUT
5 GND
MCP14A0901/MCP14A0902
2 x 3 TDFN*
V
DD
1
IN 2
EN 3
GND 4
EP
9
8 V
DD
7 OUT/OUT
6 OUT/OUT
5 GND
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2019 Microchip Technology Inc.
DS20006183A-page 1
MCP14A0901/2
Functional Block Diagram
V
DD
Internal
Pull-Up
Enable
V
REF
GND
V
DD
Input
V
REF
GND
Noninverting
Inverting
Output
–
Pin 7
Output
–
Pin 6
MCP14A0901
Inverting
MCP14A0902
Noninverting
DS20006183A-page 2
2019 Microchip Technology Inc.
MCP14A0901/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
V
DD
, Supply Voltage............................................. +20V
V
IN
, Input Voltage........... (V
DD
+ 0.3V) to (GND - 0.3V)
V
EN
, Enable Voltage....... (V
DD
+ 0.3V) to (GND - 0.3V)
Package Power Dissipation (T
A
= +50°C)
8L MSOP ..................................................... 0.63 W
8L SOIC ....................................................... 1.00 W
8L 2 x 3 TDFN.............................................. 1.86 W
ESD Protection on all pins .........................2 kV (HBM)
....................................................................200V (MM)
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Pin Pull-Up Resistance
Enable Input Current
Propagation Delay
Propagation Delay
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection Withstand
Reverse Current
Switching Time (Note
1)
Rise Time
Fall Time
Note 1:
t
R
t
F
—
—
22
22
27
27
ns
ns
V
DD
= 18V, C
L
= 10000 pF,
see
Figure 4-1, Figure 4-2
V
DD
= 18V, C
L
= 10000 pF,
see
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
- 0.025
—
—
—
—
0.5
—
—
1
0.7
9.0
—
—
0.025
2
1.7
—
—
V
V
Ω
Ω
A
A
I
OUT
= 0A
I
OUT
= 0A
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
(Note
1)
Duty cycle
2%, t
300 µs
(Note
1)
V
EN
V
EH
V
EL
V
HYST(EN)
R
ENBL
I
EN
t
D3
t
D4
GND - 0.3V
2.0
—
—
—
—
—
—
—
1.6
1.3
0.3
1.8
10
24
24
V
DD
+ 0.3
—
0.8
—
—
—
32
32
V
V
V
V
MΩ
µA
ns
ns
V
DD
= 18V, ENB = GND
V
DD
= 18V, ENB = GND
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3,
(Note
1)
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3,
(Note
1)
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND - 0.3V
2.0
—
—
-1
—
1.6
1.3
0.3
—
V
DD
+ 0.3
—
0.8
—
+1
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
2019 Microchip Technology Inc.
DS20006183A-page 3
MCP14A0901/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Delay Time
Sym.
t
D1
t
D2
Power Supply
Supply Voltage
V
DD
I
DD
Power Supply Current
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
360
360
360
360
18
600
600
600
600
V
µA
µA
µA
µA
V
IN
= 3V, V
EN
= 3V
V
IN
= 0V, V
EN
= 3V
V
IN
= 3V, V
EN
= 0V
V
IN
= 0V, V
EN
= 0V
Min.
—
—
Typ.
24
24
Max.
32
32
Units
ns
ns
Conditions
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1
and
Figure 4-2
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1
and
Figure 4-2
Tested during characterization, not production tested.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Input Current
Propagation Delay
Propagation Delay
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Note 1:
V
OH
V
OL
R
OH
R
OL
V
DD
- 0.025
—
—
—
—
—
—
—
—
0.025
2.3
2
V
V
Ω
Ω
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
EN
V
EH
V
EL
V
HYST(EN)
I
EN
t
D3
t
D4
GND - 0.3V
2.0
—
—
—
—
—
—
1.6
1.3
0.3
10
28
28
V
DD
+ 0.3
—
0.8
—
—
36
36
V
V
V
V
µA
ns
ns
V
DD
= 18V, ENB = GND
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3,
(Note
1)
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3,
(Note
1)
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND - 0.3V
2.0
—
—
-10
—
1.6
1.3
0.3
—
V
DD
+ 0.3
—
0.8
—
+10
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
DS20006183A-page 4
2019 Microchip Technology Inc.
MCP14A0901/2
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Switching Time (Note
1)
Rise Time
t
R
—
27
32
ns
V
DD
= 18V, C
L
= 10000 pF,
T
A
= +125°C, see
Figure 4-1,
Figure 4-2
V
DD
= 18V, C
L
= 10000 pF,
T
A
= +125°C, see
Figure 4-1,
Figure 4-2
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1, Figure 4-2
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1, Figure 4-2
Sym.
Min.
Typ.
Max.
Units
Conditions
Fall Time
t
F
—
27
32
ns
Delay Time
t
D1
t
D2
—
—
28
28
36
36
ns
ns
Power Supply
Supply Voltage
V
DD
I
DD
Power Supply Current
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
—
—
—
—
18
750
750
750
750
V
uA
uA
uA
uA
V
IN
= 3V, V
EN
= 3V
V
IN
= 0V, V
EN
= 3V
V
IN
= 3V, V
EN
= 0V
V
IN
= 0V, V
EN
= 0V
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V
Parameter
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Junction-to-Ambient Thermal Resistance, 8LD MSOP
Junction-to-Ambient Thermal Resistance, 8LD SOIC
Junction-to-Ambient Thermal Resistance, 8LD TDFN
Junction-to-Top Characterization Parameter, 8LD MSOP
Junction-to-Top Characterization Parameter, 8LD SOIC
Junction-to-Top Characterization Parameter, 8LD TDFN
Junction-to-Board Characterization Parameter, 8LD MSOP
Junction-to-Board Characterization Parameter, 8LD SOIC
Junction-to-Board Characterization Parameter, 8LD TDFN
Note 1:
JA
JA
JA
JT
JT
JT
JB
JB
JB
—
—
—
—
—
—
—
—
—
158
99.8
53.7
2.4
5.9
0.5
115.2
64.8
24.4
—
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Note 1
Note 1
Note 1
Note 1
Note 1
Note 1
Note 1
Note 1
Note 1
T
A
T
J
T
A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Sym.
Min.
Typ.
Max.
Units
Comments
Parameter is determined using High K 2S2P 4-Layer board as described in JESD 51-7, as well as JESD
51-5 for packages with exposed pads.
2019 Microchip Technology Inc.
DS20006183A-page 5
