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MCP6N16-001E/MSVAO

仪表放大器, 单路, 表面贴装安装, 85μV偏置, 8引脚, 轨至轨输出 MSOP封装

产品类别:半导体    放大器 IC   

制造商:Microchip(微芯科技)

官网地址:https://www.microchip.com

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MCP6N16-001E/MSVAO概述
仪表放大器是一种不同的差分放大器类型,配备有输入缓冲放大器,无需输入匹配阻抗。 特征包括超低直流偏移、低漂移、低噪音、极高开路增益、极高共模抑制比和极高输入阻抗。
MCP6N16-001E/MSVAO规格参数
参数名称
属性值
类别
半导体;放大器 IC
厂商名称
Microchip(微芯科技)
系列
Automotive, AEC-Q100
包装
管件
放大器类型
仪表
电路数
1
输出类型
满摆幅
增益带宽积
500 kHz
电流 - 输入偏置
2 pA
电压 - 输入补偿
85 µV
电流 - 供电
1.1mA
电流 - 输出/通道
10 mA
电压 - 跨度(最小值)
1.8 V
电压 - 跨度(最大值)
5.5 V
工作温度
-40°C ~ 125°C
安装类型
表面贴装型
封装/外壳
8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商器件封装
8-MSOP
基本产品编号
MCP6N16
MCP6N16-001E/MSVAO文档预览
MCP6N16
Zero-Drift Instrumentation Amplifier
Features:
• High DC Precision:
- V
OS
: ±17 µV (maximum, G
MIN
= 100)
- TC
1
: ±60 nV/°C (maximum, G
MIN
= 100)
- CMRR: 112 dB (minimum, G
MIN
= 100,
V
DD
= 5.5V)
- PSRR: 110 dB (minimum, G
MIN
= 100,
V
DD
= 5.5V)
- g
E
: ±0.15% (maximum, G
MIN
= 10, 100)
• Flexible:
- Minimum Gain (G
MIN
) Options:
1, 10 and 100 V/V
- Rail-to-Rail Input and Output
- Gain Set by Two External Resistors
• Bandwidth: 500 kHz (typical, Gain = G
MIN
= 1, 10)
• Power Supply:
- V
DD
: 1.8V to 5.5V
- I
Q
: 1.1 mA (typical)
- Power Savings (Enable) Pin: EN
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR): 111 dB at 2.4 GHz
• Extended Temperature Range: -40°C to +125°C
Description:
Microchip Technology Inc. offers the single Zero-Drift
MCP6N16 instrumentation amplifier (INA) with Enable
pin (EN) and three minimum gain options (G
MIN
). The
internal offset correction gives high DC precision: it has
very low offset and offset drift, and negligible 1/f noise.
Two external resistors set the gain, minimizing gain
error and drift over temperature. The reference voltage
(V
REF
) shifts the output voltage (V
OUT
).
The MCP6N16 is designed for single-supply operation,
with rail-to-rail input (no common mode crossover
distortion) and output performance. The supply voltage
range (1.8V to 5.5V) is low enough to support many
portable applications. All devices are fully specified
from -40°C to +125°C. Each part has EMI filters at the
input pins, for good EMI rejection (EMIRR).
These parts have three minimum gain options (1, 10
and 100 V/V). This allows the user to optimize the input
offset voltage and input noise for different applications.
Typical Application Circuit
V
DD
2.49 kΩ
10 µF
EN
4.99 kΩ
4.99 kΩ
RTD Temperature Sensor
Typical Applications:
High-Side Current Sensor
Wheatstone Bridge Sensors
Difference Amplifier with Level Shifting
Power Control Loops
MCP6N16-100
V
OUT
20 kΩ
100Ω
100Ω
68.1Ω
4.99 kΩ
RTD
100Ω
Design Aids:
• SPICE Macro Model
• Microchip Advanced Part Selector (MAPS)
• Application Notes
Package Types
MCP6N16
MSOP
EN 1
V
IM
2
V
IP
3
V
SS
4
8 V
DD
7 V
OUT
6 V
FG
5 V
REF
MCP6N16
3×3 DFN *
EN 1
V
IM
2
V
IP
3
V
SS
4
EP
9
8 V
DD
7 V
OUT
6 V
FG
5 V
REF
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2014 Microchip Technology Inc.
DS20005318A-page 1
MCP6N16
Minimum Gain Options
Table 1
shows key specifications that differentiate
between the different minimum gain (G
MIN
) options.
See
Section 1.0 “Electrical Characteristics”,
Section 6.0 “Packaging Information”
and
Product
Identification System
for further information on G
MIN
.
TABLE 1:
Part No.
MCP6N16-001
MCP6N16-010
MCP6N16-100
Note 1:
KEY DIFFERENTIATING SPECIFICATIONS
G
MIN
V
OS
(V/V) (±μV)
Nom. Max.
1
10
100
85
22
17
CMRR
e
ni
TC
1
E
ni
PSRR V
DMH
GBWP
(±nV/°C)
(dB)
(μV
P-P
)
(nV/√Hz)
(dB)
(V)
(MHz)
Max.
Min.
Typ.
Typ.
Min. Min.
Typ.
T
A
= -40 to +125°C V
DD
= 5.5V
f = 0.1 to 10 Hz f < 500 Hz
1800
180
60
89
103
112
91
104
110
2.7
0.27
0.027
0.50
5.0
35
19
2.2
0.93
900
105
45
G
MIN
is the minimum stable gain (G
DM
), for a given part option. In other words, G
DM
G
MIN
.
4
3
Input Offset V
O
Voltage (µV)
e
Figures 1
to
3
show input offset voltage versus
temperature for the three gain options (G
MIN
= 1, 10,
100 V/V).
40
30
2
1
0
-1
-2
-3
G
MIN
= 100
28 Samples
V
DD
= 5.5V
5 5V
V
CM
= V
DD
/2
NPBW = 3 mHz
Input Offset Voltage (µV)
O
20
10
0
-10
0
-20
-30
-40
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
G
MIN
= 1
28 Samples
V
DD
= 5.5V
V
CM
= V
DD
/2
NPBW = 3 mHz
-4
4
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 3:
Input Offset Voltage vs.
Temperature, with G
MIN
= 100.
FIGURE 1:
Input Offset Voltage vs.
Temperature, with G
MIN
= 1.
4
3
Input Offset V
O
Voltage (µV)
e
2
1
0
-1
-2
-3
-4
4
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
G
MIN
= 10
28 Samples
V
DD
= 5 5V
5.5V
V
CM
= V
DD
/2
NPBW = 3 mHz
FIGURE 2:
Input Offset Voltage vs.
Temperature, with G
MIN
= 10.
DS20005318A-page 2
2014 Microchip Technology Inc.
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
2014 Microchip Technology Inc.
DS20005318A-page 3
V
DD
– V
SS
............................................................................................................................................................................................................................................ 6.5V
Current at Input Pins
(Note
1)
........................................................................................................................................................................................................... ±2 mA
Analog Inputs (V
IP
and V
IM
)
(Note
1)
.................................................................................................................................................................. V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ............................................................................................................................................................................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ............................................................................................................................................................................................................. |V
DD
– V
SS
|
Output Short-Circuit Current ...................................................................................................................................................................................................... Continuous
Current at Output and Supply Pins .................................................................................................................................................................................................. ±30 mA
Storage Temperature ......................................................................................................................................................................................................... -65°C to +150°C
Maximum Junction Temperature ......................................................................................................................................................................................................+150°C
ESD protection on all pins (HBM, MM).....................................................................................................................................................................................
4 kV, 400V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum
rating conditions for extended periods may affect device reliability.
Note 1:
See
Section 4.3.1.2 “Input Voltage Limits”
and
Section 4.3.1.3 “Input Current Limits”.
MCP6N16
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
DS20005318A-page 4
2014 Microchip Technology Inc.
MCP6N16
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= 1.8V to 5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
DM
= 0V, V
REF
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ
to V
L
, G
DM
= G
MIN
and EN = V
DD
; see
Figures 1-7
and
1-8
(Note
1).
Parameters
Input Offset
Input Offset Voltage
V
OS
-85
-22
-17
Input Offset Voltage Drift –
Linear Temp. Co.
Input Offset Voltage Drift –
Quadratic Temp. Co.
Input Offset Aging
TC
1
-1800
-180
-60
TC
2
∆V
OS
Power Supply Rejection Ratio
PSRR
91
104
110
Output Offset
Output Offset Voltage
Input Current and Impedance (Note
3)
Input Bias Current
Across Temperature
Across Temperature
Note 1:
2:
3:
4:
5:
6:
I
B
-100
0
±2
20
250
+100
2000
pA
all
T
A
= +85°C
T
A
= +125°C
V
OSO
0
µV
all
±560
±63
±69
±1.0
±0.8
±0.7
109
122
128
+85
+22
+17
+1800
+180
+60
dB
µV
pV/°C
2
nV/°C
µV
1
10
100
1
10
100
1
10
100
1
10
100
1
10
100
408 hr Life Test at +150°C,
measured at +25°C
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
(Note
2)
T
A
= +25°C
Sym.
Min.
Typ.
Max.
Units
G
MIN
Conditions
V
CM
= (V
IP
+ V
IM
)/2, V
DM
= (V
IP
– V
IM
) and G
DM
= 1 + R
F
/R
G
.
For Design Guidance only; not tested.
These specifications apply to the V
IP
, V
IM
input pair (use V
CM
) and to the V
REF
, V
FG
input pair (use V
REF
instead).
This specification applies to the V
IP
, V
IM
, V
REF
and V
FG
pins individually.
Figures 2-52
and
2-53
show the V
IVL
, V
IVH
, V
DML
and V
DMH
variation over temperature.
See
Section 1.5 “Explanation of DC Error Specifications”.
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
2014 Microchip Technology Inc.
DS20005318A-page 5
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= 1.8V to 5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
DM
= 0V, V
REF
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ
to V
L
, G
DM
= G
MIN
and EN = V
DD
; see
Figures 1-7
and
1-8
(Note
1).
Parameters
Input Offset Current
Across Temperature
Across Temperature
Common Mode Input Impedance
Differential Input Impedance
Input Voltage Range
(Note
4, Note 5)
Common Mode Rejection Ratio
Z
CM
Z
DIFF
V
IVL
V
IVH
CMRR
Sym.
I
OS
Min.
-800
-1500
V
DD
+ 0.15
80
94
103
89
103
112
Common Mode Rejection Ratio at V
REF
CMRR2
83
98
102
94
109
115
Note 1:
2:
3:
4:
5:
6:
Typ.
±300
±320
±350
10
13
||10
10
13
||4
V
SS
– 0.25
V
DD
+ 0.30
98
112
121
107
121
130
101
116
120
112
127
133
Max.
+800
+1500
V
SS
– 0.15
dB
dB
1
10
100
1
10
100
1
10
100
1
10
100
V
REF
= 0.2V to V
DD
– 0.2V,
V
DD
= 5.5V
V
REF
= 0.2V to V
DD
– 0.2V,
V
DD
= 1.8V
V
CM
= V
IVL
to V
IVH
, V
DD
= 5.5V
V
CM
= V
IVL
to V
IVH
, V
DD
= 1.8V
V
all
Ω||pF
Units
pA
G
MIN
all
T
A
= +85°C
T
A
= +125°C
Conditions
Input Common Mode Voltage (V
CM
or V
REF
) (Note
3)
V
CM
= (V
IP
+ V
IM
)/2, V
DM
= (V
IP
– V
IM
) and G
DM
= 1 + R
F
/R
G
.
For Design Guidance only; not tested.
These specifications apply to the V
IP
, V
IM
input pair (use V
CM
) and to the V
REF
, V
FG
input pair (use V
REF
instead).
This specification applies to the V
IP
, V
IM
, V
REF
and V
FG
pins individually.
Figures 2-52
and
2-53
show the V
IVL
, V
IVH
, V
DML
and V
DMH
variation over temperature.
See
Section 1.5 “Explanation of DC Error Specifications”.
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