FZ12 / F0122PA050SC01
preliminary datasheet
flowPHASE0
Features
●
Trench Fieldstop IGBT technology
●
2-clip housing in 12mm and 17mm height
●
Compact and low inductance design
4
1200V/50A
flow0 housing
●
AlN substrate for improved performance
Target Applications
●
Motor Drive
●
UPS
Schematic
Types
●
FZ122PA050SC01
●
F0122PA050SC01
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
69
86
150
211
320
±20
10
800
175
V
A
A
W
V
μs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
69
90
100
149
226
175
V
A
A
W
°C
Copyright by Vincotech
1
Revision: 1
FZ12 / F0122PA050SC01
preliminary datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
Copyright by Vincotech
2
Revision: 1
FZ12 / F0122PA050SC01
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
±15
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=8
Ω
Rgon=8
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
CE
=V
GE
15
0
20
1200
0
0,0018
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1,5
5,8
1,96
2,33
6,5
2,3
0,02
700
4
102
106
17
24
225
289
97
131
2,49
4,04
2,88
4,63
2770
205
160
193
0,45
K/W
nC
pF
V
V
mA
nA
Ω
ns
±15
600
50
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
Rgon=8
Ω
±15
600
50
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,76
1,69
80,03
87
128,7
290,7
4,26
8,9
4953
1407
1,57
3,55
0,64
K/W
2,2
V
A
ns
μC
A/μs
mWs
Copyright by Vincotech
3
Revision: 1
FZ12 / F0122PA050SC01
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
150
I
C
(A)
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
150
Output inverter IGBT
120
120
90
90
60
60
30
30
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
350
μs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
350
μs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
50
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
150
I
F
(A)
Output inverter FRED
40
120
30
90
20
60
T
j
= T
jmax
-25°C
T
j
= 25°C
10
30
T
j
= T
jmax
-25°C
T
j
= 25°C
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
350
10
μs
V
At
t
p
=
350
μs
Copyright by Vincotech
4
Revision: 1
FZ12 / F0122PA050SC01
preliminary datasheet
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
E (mWs)
9
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
E (mWs)
9
Output inverter IGBT
E
on High T
E
on High T
7,5
7,5
6
E
off High T
E
off Low T
6
E
on Low T
4,5
E
on Low T
4,5
E
off High T
3
3
E
off Low T
1,5
1,5
0
0
20
40
60
80
I
C
(A)
100
0
0
8
16
24
32
R
G
(
Ω
)
40
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
8
Ω
R
goff
=
8
Ω
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
50
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
5
E (mWs)
Output inverter IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
5
E (mWs)
Output inverter IGBT
E
rec
T
j
= T
jmax
-25°C
4
4
T
j
= T
jmax
-25°C
3
3
E
rec
T
j
= 25°C
2
E
rec
2
T
j
= 25°C
E
rec
1
1
0
0
20
40
60
80
I
C
(A)
100
0
0
8
16
24
32
R
G
(
Ω
)
40
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
8
Ω
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
50
A
Copyright by Vincotech
5
Revision: 1
