10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
flow
PFC
0
Features
●
Vincotech clip-in housing
●
Compact and low inductance design
●
Suitable for Interleaved topology
●
Suitable for curent sensing in collector or in emitter
●
Ultrafast boost IGBT and FRED
600 V/ 2 x 15 A / 50 kHz
flow
0 housing
12 mm housing
17 mm housing
Target Applications
●
PFC for welding
●
PFC for SMPS
●
PFC for motor drives
●
PFC for UPS
●
PFC for battery charger
Schematic
(F0/FZ)062TA030FB
FZ062TA030FB01
Types
●
(F0/FZ)062TA030FB; without SCR, current sense in collector
●
FZ062TA030FB01; with SCR, current sense in collector
●
FZ062TA030FB02; without SCR, current sense in emitter
●
(F0/FZ)062TA030FB03; with SCR, current sense in emitter
FZ062TA030FB02
(F0/FZ)062TA030FB03
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=10ms
I
2
t
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
j
=25°C
310
40
A
2
s
W
°C
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
1600
35
V
A
A
250
150
Input Rectifier Thyristor
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Thyristor
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=10ms
I
2
t
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
j
=25°C
310
44
A
2
s
W
°C
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
800
34
V
A
A
250
150
Copyright by Vincotech
1
Revision:
3
10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
PFC IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
19
90
57
V
A
A
W
V
°C
+/- 20
150
C.T. Inverse diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
8
16
14
V
A
A
W
°C
175
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
20
40
31
V
A
A
W
°C
600
PFC Shunt
DC forward current
Power dissipation per Shunt
I
F
P
tot
T
c
=25°C
T
c
=25°C
31,6
10
A
W
DC link Capacitor
Max.DC voltage
V
MAX
T
c
=25°C
500
V
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
17 mm housing
12 mm housing
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
min 8,89
V
mm
mm
Copyright by Vincotech
2
Revision:
3
10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
V
F
V
to
r
t
I
r
R
thJH
Thermal grease
thickness≤50um
λ
=1 W/mK
30
30
30
1500
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=150°
C
1,16
1,11
0,9
0,77
9
12
1,4
V
V
m
0,02
2
mA
K/W
1,72
Input Rectifier Thyristor
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Latching current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal resistance chip to heatsink per chip
V
F
V
to
r
t
I
r
t
GD
t
GR
(dv/dt)cr
(di/dt)cr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
30
30
30
800
Ig=0,5A
dig/dt=0,5A/us
Ig=0,2A
dig/dt=0,2A/us
VD=1/2Vdrm
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=25°
C
1,25
1,22
0,93
0,82
0,011
0,014
1,6
V
V
m
0,05
2
2
<1
500
150
150
50
90
1,3
1,6
28
50
0,2
1
mA
µs
µs
V/µs
A/µs
µs
mA
mA
V
mA
V
mA
K/W
VD=2/3Vdrm
Ig=0,2A
f=50Hz
VD=2/3Vdrm
tp=200us
VD=6V
tp=10us
Ig=0,2A
VD=6V
VD=6V
VD=1/2Vdrm
VD=1/2Vdrm
VD=2/3Vdrm
40
Tj=125°
C
Tj=125°
C
Tj=125°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=-40°
C
Tj=25°
C
Tj=-40°
C
Tj=125°
C
Tj=125°
C
100
26
11
1,57
PFC IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
Vce
0,0005
30
0
20
600
0
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
3
4
2,89
3,43
3,43
5
3,3
30
0,2
V
V
mA
nA
n.a.
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
15,8
15,4
6,4
7,4
107,6
120,4
4,2
6,6
0,2197
0,4012
0,1983
0,3086
ns
Rgoff=2
Rgon=2
15
400
18
mWs
1500
f=1MHz
0
25
Tj=25°
C
150
92
15
480
30
Tj=25°
C
92
1,22
nC
K/W
pF
Copyright by Vincotech
3
Revision:
3
10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
C.T. Inverse diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
V
F
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
1,66
1,61
V
K/W
5,12
PFC Diode
Forward voltage
Reverse recovery time
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance chip to heatsink per chip
V
F
I
rm
I
RRM
t
rr
Q
rr
E
rec
di(rec)max
/dt
15
Rgoff=2
15
400
18
Rgoff=2
15
400
18
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
2,03
1,5
12
19,4
40,539
61,079
12
19,4
0,2368
0,6337
0,0526
0,1334
13672
12699
2,29
2,7
V
µA
A
ns
µC
mWs
A/µs
K/W
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
PFC Shunt
R1 value
Temperature coeficient
Internal heat resistance
Inductance
R
t
c
R
thi
L
20° to 60°
C
C
9,4
10
< 50
< 6.5
<3
10,6
m
ppm/K
K/W
nH
DC link Capacitor
C value
C
480
540
600
nF
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation
constant
R
ǑR/R
P
R25=22 K
Tj=25°
C
Tj=100°
C
Tj=25°
C
C
Tj=25°
-5
22
5
210
3,5
3940
4000
k
%
mW
mW/K
K
K
B-value
B-value
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
Tj=25°
C
Tj=25°
C
Copyright by Vincotech
4
Revision:
3
10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
PFC Switch & C.T. Inverse Diode
Figure 1
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
20
I
F
(A)
Inverse diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
Z
thJH
= f(t
p
)
10
1
Inverse diode
16
10
0
12
Z
thJC
(K/W)
8
10
-1
T
j
= T
jmax
-25°
C
4
T
j
= 25°
C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
-4
10
-3
10
-2
10
-1
10
0
0
0
1
1
2
2
3
V
F
(V)
3
10
-2
10
-5
t
p
(s)
10
1
10
t
p
=
250
µs
D=
R
thJH
=
tp / T
5,12
K/W
Figure 3
Power dissipation as a
function of heatsink temperature
P
tot
= f(T
h
)
P
tot
(W)
40
Inverse diode
Figure 4
Forward current as a
function of heatsink temperature
I
F
= f(T
h
)
12
I
F
(A)
Inverse diode
10
32
8
24
6
16
4
8
2
0
0
50
100
150
T
h
( C)
o
0
200
0
50
100
150
T
h
( C)
o
200
T
j
=
150
ºC
T
j
=
150
ºC
Copyright by Vincotech
5
Revision:
3
